MBR860

Abstract: MBR850
Contextual Info: MBR850 thru MBR860 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode MBR850 MBR860 VRRM V 50 60 VRMS V 35 42 Symbol VDC V 50 60 Characteristics 8 A

SR10100

Abstract: MBR10100 MBR1035 MBR1045 MBR1050 MBR1060 MBR835 MBR845 MBR850 MBR860
Contextual Info: Schottky Barrier Rectifiers Part No. CrossReference MBR835 - MBR845 - MBR850 - MBR860 Operating Temperature: -65o C to 125 o C Max. Average Rectified Current Peak Inverse Voltage lo A PIV(V) Peak Fwd. Surge Current @ 8.3 ms Superimposed lFSM (A) 35 8.0 A

MBR850

Abstract: MBR860
Contextual Info: MBR850 thru MBR860 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode MBR850 MBR860 VRRM V 50 60 VRMS V 35 42 Symbol VDC V 50 60 Characteristics 8 A

DS30030

Abstract: 4b42
Contextual Info: MBR830 - MBR860 8.0A SCHOTTKY BARRIER RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward

MBR830

Abstract: MBR835 MBR840 MBR845 MBR850 MBR860
Contextual Info: LITE-ON SEMICONDUCTOR MBR830 thru MBR860 REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 8.0 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AC FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

MBR8100

Abstract: MBR830 MBR840 MBR850 MBR860 MBR880
Contextual Info: MBR830 thru MBR8100 REVERSE VOLTAGE - 30 to 100Volts FORWARD CURRENT - 8.0 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AC FEATURES ●Metal of silicon rectifier , majority carrier conduction .108 2.75 ●Guard ring for transient protection .187(4.7) .148(3.8)

Contextual Info: MBR830 - MBR860 8.0A SCHOTTKY BARRIER RECTIFIER Features • · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop

MBR830

Abstract: MBR835 MBR840 MBR845 MBR850 MBR860
Contextual Info: LITE-ON SEMICONDUCTOR MBR830 thru MBR860 REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 8.0 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AC FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

MBR8100

Abstract: MBR830 11111V
Contextual Info: BL GALAXY ELECTRICAL MBR830 - - - MBR8100 VOLTAGE RANGE: 30 - 100 V CURRENT: 8.0 A SCHOTTKY BARRIER RECTIFIER FEATURES TO-220AC High s urge capacity. For us e in low voltage, high frequency inverters , free 111wheeling, and polarity protection applications .

MBRF830

Contextual Info: GALAXY ELECTRICAL MBRF830 - - - MBRF8100 VOLTAGE RANGE: 30 - 100 V CURRENT: 8.0 A SCHOTTKY BARRIER RECTIFIER FEATURES ITO-220AC High s urge capacity. For us e in low voltage, high frequency inverters , free 111wheeling, and polarity protection applications .

Contextual Info: MBR830 thru MBR8100 REVERSE VOLTAGE - 30 to 100Volts FORWARD CURRENT - 8.0 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AC FEATURES ●Metal of silicon rectifier , majority carrier conduction ●Guard ring for transient protection .135 3.44 .103 (2.62) ●Low power loss,high efficiency

MBR830

Abstract: MBR845 MBR850 MBR860 MBR830-MBR860 DS30030
Contextual Info: MBR830 - MBR860 8.0A SCHOTTKY BARRIER RECTIFIER Features • · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop

Contextual Info: LITE ON POWER SEMICONDUCTOR MBR830 thru MBR860 REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 8.0 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AC FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

mbr 045

Abstract: mbr schottky MBR 030 845CT
Contextual Info: SIYU R MBR830CT . MBR8100CT 肖特基二极管 Schottky Barrier Rectifier 反向电压 30-100V 正向电流 单管 4.0 A Reverse Voltage 30 to 100 V Forward Current(Single) 4.0 A 特征 Features TO-220AB .190(4.83) .140(3.56) .420(10.67) .380(9.65)

MBR830

Abstract: MBR835 MBR840 MBR845 MBR850 MBR860
Contextual Info: LITE-ON SEMICONDUCTOR MBR830 thru MBR860 REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 8.0 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AC FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220A Plastic-Encapsulate Diodes MBR830, 35, 40, 45, 50, 60 TO-220A SCHOTTKY BARRIER RECTIFIER 1. CATHODE FEATURES  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection  Low Power Loss,High Efficiency

Ir 845

Contextual Info: SIYU R MBR830 . MBR8100 肖特基二极管 Schottky Barrier Rectifier 反向电压 30-100V 正向电流 8.0 A Reverse Voltage 30 to 100 V Forward Current 8.0 A 特征 Features TO-220AC .190 4.83 .140(3.56) .420(10.67) .380(9.65) •大电流承受能力。High Current Capability

MBR5200

Abstract: MBR30200 MBR30200PT TO-247ad MBR5100 MBR540 2x160 MBR1040CT mbr560 MBR5150
Contextual Info: Schottky Barrier Diodes High Tjm Low IRRM Schottky Barrier Diodes Tj=-65°C~+175°C, Tjm=+175°C Òype VR=V V RRM Electrical Characteristics IR @ VR=VRRM IFAV IFSM 25°C 125°C A m A mA VFmax @ IFM V A Package Style MBR540 40 5,0 175 0,50 33 0,55 5 TO-220AC