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    MBR845 Price and Stock

    onsemi MBR845RL

    DIODE SCHOTTKY 45V 8A AXIAL
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    DigiKey MBR845RL Reel 1,500
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    Bristol Electronics MBR845RL 1,353
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    Rochester Electronics MBR845RL 2 1
    • 1 $0.2058
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    PanJit Group MBR845_T0_00001

    SCHOTTKY BARRIER RECTIFIERS
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    DigiKey MBR845_T0_00001 Tube 76,000
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    PanJit Group MBR845D_R2_00001

    D PAK SURFACE MOUNT SCHOTTKY BAR
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    DigiKey MBR845D_R2_00001 Reel 75,200
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    MBR845D_R2_00001 Cut Tape 1
    • 1 $1.19
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    MBR845D_R2_00001 Digi-Reel 1
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    PanJit Group MBR845DC_R2_00001

    DIODE ARRAY SCHOTT 45V 8A TO-263
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    DigiKey MBR845DC_R2_00001 Cut Tape 1
    • 1 $1.3
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    MBR845DC_R2_00001 Reel 75,200
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    MBR845DC_R2_00001 Digi-Reel 1
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    MOSLEADER MBR845CT_T0_10001-ML

    TO220AB Commercial Grade
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    DigiKey MBR845CT_T0_10001-ML Tube 1,000
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    MBR845 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBR845 Diodes 8.0A SCHOTTKY BARRIER RECTIFIER Original PDF
    MBR845 Lite-On Technology Schottky Barrier Rectifier Original PDF
    MBR845 Lite-On Technology 45V, 8.0A schottky barrier rectifier Original PDF
    MBR845 On Semiconductor Axial Lead Rectifiers Original PDF
    MBR845 Sirectifier Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Original PDF
    MBR845CT Diodes 8.0A SCHOTTKY BARRIER RECTIFIER Original PDF
    MBR845RL On Semiconductor 8A 45V Schottky Rectifier Original PDF

    MBR845 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MBR845

    Abstract: MBR835 MBR835RL MBR840 MBR840RL MBR845RL
    Text: MBR835, MBR840, MBR845 Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap


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    MBR835, MBR840, MBR845 r14525 MBR835/D MBR845 MBR835 MBR835RL MBR840 MBR840RL MBR845RL PDF

    MBR835

    Abstract: MBR835RL MBR840 MBR840RL MBR845 MBR845RL
    Text: MBR835, MBR840, MBR845 Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap


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    MBR835, MBR840, MBR845 MBR835/D MBR835 MBR835RL MBR840 MBR840RL MBR845 MBR845RL PDF

    MBR835

    Abstract: MBR835RL MBR840 MBR840RL MBR845 MBR845RL
    Text: MBR835, MBR840, MBR845 Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap


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    MBR835, MBR840, MBR845 r14525 MBR835/D MBR835 MBR835RL MBR840 MBR840RL MBR845 MBR845RL PDF

    MBR830

    Abstract: MBR835 MBR840 MBR845
    Text: MBR830 thru MBR845 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode MBR830 MBR835 MBR840 MBR845 VRRM V 30 35 40 45 VRMS V 21 24.5 28 31.5 Symbol VDC


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    MBR830 MBR845 O-220AC MBR830 MBR835 MBR840 125oC MBR835 MBR840 MBR845 PDF

    SR10100

    Abstract: MBR10100 MBR1035 MBR1045 MBR1050 MBR1060 MBR835 MBR845 MBR850 MBR860
    Text: Schottky Barrier Rectifiers Part No. CrossReference MBR835 - MBR845 - MBR850 - MBR860 Operating Temperature: -65o C to 125 o C Max. Average Rectified Current Peak Inverse Voltage lo A PIV(V) Peak Fwd. Surge Current @ 8.3 ms Superimposed lFSM (A) 35 8.0 A


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    MBR835 MBR850 MBR860 MBR845 MBR1035 SR1035 MBR1045 SR1045 MBR1050 SR1050 SR10100 MBR10100 MBR1035 MBR1045 MBR1050 MBR1060 MBR835 MBR845 MBR850 MBR860 PDF

    MBR830

    Abstract: MBR835 MBR840 MBR845
    Text: MBR830 thru MBR845 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode MBR830 MBR835 MBR840 MBR845 VRRM V 30 35 40 45 VRMS V 21 24.5 28 31.5 Symbol VDC


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    MBR830 MBR845 O-220AC MBR830 MBR835 MBR840 125oC MBR835 MBR840 MBR845 PDF

    DS30030

    Abstract: 4b42
    Text: MBR830 - MBR860 8.0A SCHOTTKY BARRIER RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward


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    MBR830 MBR860 O-220AC MBR845 MBR850 DS30030 MBR830-MBR860 4b42 PDF

    mps2112

    Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular


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    SG388/D May-2002 r14525 SG388 mps2112 UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp PDF

    CS5170

    Abstract: mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control
    Text: SGD501/D REV 8, January 5, 2002 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section EFFECTIVE DATE: JANUARY 5, 2002 General Information Elimination Of Ozone Depleting Chemicals . . . .


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    SGD501/D Janua667 CS5170 mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control PDF

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


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    CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l PDF

    MBR830

    Abstract: MBR835 MBR840 MBR845 MBR850 MBR860
    Text: LITE-ON SEMICONDUCTOR MBR830 thru MBR860 REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 8.0 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AC FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency


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    MBR830 MBR860 O-220AC O-220AC MBR830 MBR845 MBR850 300us MBR835 MBR840 MBR845 MBR850 MBR860 PDF

    Untitled

    Abstract: No abstract text available
    Text: MBR830 - MBR860 8.0A SCHOTTKY BARRIER RECTIFIER Features • · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop


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    MBR830 MBR860 O-220AC MIL-STDMBR860 MBR845 MBR850 DS30030 MBR830-MBR860 PDF

    MBR830

    Abstract: MBR835 MBR840 MBR845 MBR850 MBR860
    Text: LITE-ON SEMICONDUCTOR MBR830 thru MBR860 REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 8.0 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AC FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency


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    MBR830 MBR860 O-220AC O-220AC MBR850 300us MBR830 MBR845 13-Sep-2001, MBR835 MBR840 MBR845 MBR850 MBR860 PDF

    Untitled

    Abstract: No abstract text available
    Text: 80SQ045N Preferred Device Axial Lead Rectifier These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,


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    80SQ045N 80SQ045N/D PDF

    80SQ045N

    Abstract: 80SQ045NRL MBR845
    Text: 80SQ045N Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


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    80SQ045N r14525 80SQ045N/D 80SQ045N 80SQ045NRL MBR845 PDF

    MBR830

    Abstract: MBR845 MBR850 MBR860 MBR830-MBR860 DS30030
    Text: MBR830 - MBR860 8.0A SCHOTTKY BARRIER RECTIFIER Features • · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop


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    MBR830 MBR860 O-220AC MIL-STD-202, MBR845 MBR850 DS30030 MBR830-MBR860 MBR845 MBR860 MBR830-MBR860 PDF

    ANA 618

    Abstract: voltage regulator ana 618 NZSMB15CAT3 GP 809 DIODE 1500w audio amplifier circuit SPEED CONTROL of DC MOTOR tda1085c CS5170 ANA 618* voltage regulator 12 VOLT 2 AMP smps diode 1n4007 MIC MAKE
    Text: SGD501/D REV 13, April 12, 2003 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION - Please see General Information Section EFFECTIVE DATE: APRIL 12, 2003  General Information Elimination Of Ozone Depleting Chemicals . . . .


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    SGD501/D ANA 618 voltage regulator ana 618 NZSMB15CAT3 GP 809 DIODE 1500w audio amplifier circuit SPEED CONTROL of DC MOTOR tda1085c CS5170 ANA 618* voltage regulator 12 VOLT 2 AMP smps diode 1n4007 MIC MAKE PDF

    Untitled

    Abstract: No abstract text available
    Text: 80SQ045N Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,


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    80SQ045N PDF

    Untitled

    Abstract: No abstract text available
    Text: 80SQ045N Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,


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    80SQ045N 80SQ045N/D PDF

    diode 1N4007 spice

    Abstract: CCM PFC inductor analysis Spice model xfmr NCP1200 CROSS REFERENCE analysis of PWM converters using model of PWM switch optocoupler spice model spice TRANSFORMER simulation TL431 model SPICE Loop Compensation Voltage-Mode Buck Converters ma MC33262 datasheet
    Text: Simulating Power Supplies with SPICE Agenda ‰ Why simulating power supplies? ‰ Average modeling techniques ‰ The PWM switch concept, CCM ‰ The PWM switch concept, DCM ‰ The voltage-mode model at work ‰ Current-mode modeling ‰ The current-mode model at work


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: LITE ON POWER SEMICONDUCTOR MBR830 thru MBR860 REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 8.0 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AC FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency


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    MBR830 MBR860 O-220AC O-220AC MBR850 300us MBR830 MBR845 24-May-2000 PDF

    mbr 045

    Abstract: mbr schottky MBR 030 845CT
    Text: SIYU R MBR830CT . MBR8100CT 肖特基二极管 Schottky Barrier Rectifier 反向电压 30-100V 正向电流 单管 4.0 A Reverse Voltage 30 to 100 V Forward Current(Single) 4.0 A 特征 Features TO-220AB .190(4.83) .140(3.56) .420(10.67) .380(9.65)


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    MBR830CT MBR8100CT 0---100V O-220AB MBR830CT MBR845CT mbr 045 mbr schottky MBR 030 845CT PDF

    mosfet triggering circuit USING TL494

    Abstract: controller for PWM fan tl494 TIP35C TIP36C sub amplifier circuit diagram 74ls TTL family UC3842 variable voltage smps design with TL431 Buck converter with sg3526 UC3842 smps design with TL431 MC44608P40 equivalent TRANSISTOR MPS2112 MC3364D
    Text: SG388/D Rev. 3, May-2001 Master Components Selector Guide PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


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    SG388/D May-2001 The422-3781 r14525 SG388/D mosfet triggering circuit USING TL494 controller for PWM fan tl494 TIP35C TIP36C sub amplifier circuit diagram 74ls TTL family UC3842 variable voltage smps design with TL431 Buck converter with sg3526 UC3842 smps design with TL431 MC44608P40 equivalent TRANSISTOR MPS2112 MC3364D PDF

    SBLF10100CT

    Abstract: SBLF1030CT-SBLF10100CT SB320-SB3A0 sbl20100 SMD 1N60 RN1Z 1N4139-1N4146 MTZJ 188 US2A-US2M LR kbpc3510
    Text: CONTENTS TABLE OF CONTENTS ……………………C NUMERICAL INDEX ……………………L SYMBOLS AND TERMS ……………………S HIGH RELIABILITY EXPERIMENT ……………………U trr REVERSE RECOVERY TIME MEASUREMENT CIRCUIT ……………………V


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    SZQ50A24L3 SZQ50A28L3 SZQ50A34L3 SZQ50A38L3 SZQ50K24L3 SZQ50K28L3 SZQ50K34L3 SZQ50K38L3 SBLF10100CT SBLF1030CT-SBLF10100CT SB320-SB3A0 sbl20100 SMD 1N60 RN1Z 1N4139-1N4146 MTZJ 188 US2A-US2M LR kbpc3510 PDF