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    Panasonic Electronic Components MA3J70000L

    DIODE SCHOTT 40V 500MA SMINI3-F1
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    MA3J700 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MA3J700 Panasonic Diode Original PDF
    MA3J700 Panasonic Silicon epitaxial planar type Original PDF
    MA3J700 Panasonic Silicon Epitaxial Planar Type Schottky Barrier Diode (SBD) Original PDF
    MA3J70000L Panasonic Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 40V 0.5A SMINI3 Original PDF

    MA3J700 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MA10700

    Abstract: MA3J700
    Text: Schottky Barrier Diodes SBD MA3J700 (MA10700) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward current (Average) IF(AV) = 500 mA rectification is possible • Optimum for high frequency rectification because of its short reverse recovery time trr


    Original     		PDF MA3J700 MA10700) MA10700 MA3J700

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J7000G Silicon epitaxial planar type For high frequency rectification • Package ■ Features • Code SMini3-F2 • Pin Name 1: Anode 2: N.C. 3: Cathode • Forward current (Average) IF(AV) = 500 mA rectification is possible


    Original     		PDF 2002/95/EC) MA3J7000G

    MA3J7000G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J7000G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high frequency rectification • Package ■ Features • Code SMini3-F2 • Pin Name


    Original     		PDF 2002/95/EC) MA3J7000G MA3J7000G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J700 (MA10700) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ M Di ain sc te on na tin nc ue e/ d • Forward current (Average) IF(AV) = 500 mA rectification is possible


    Original     		PDF 2002/95/EC) MA3J700 MA10700)

    MA3J7000G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J7000G Silicon epitaxial planar type For high frequency rectification • Package ■ Features • Code SMini3-F2 • Pin Name 1: Anode 2: N.C. 3: Cathode Th an


    Original     		PDF 2002/95/EC) MA3J7000G MA3J7000G

    diode m2w

    Abstract: MA10700 MA3J700
    Text: Schottky Barrier Diodes SBD MA3J700 (MA10700) Silicon epitaxial planar type Unit : mm For high-frequency rectification 2.1 ± 0.1 1.25 ± 0.1 0.425 0.425 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 • S-mini type 3-pin package • Allowing to rectify under (IF(AV) = 500 mA) condition


    Original     		PDF MA3J700 MA10700) diode m2w MA10700 MA3J700

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J700 (MA10700) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward current (Average) IF(AV) = 500 mA rectification is possible


    Original     		PDF 2002/95/EC) MA3J700 MA10700)

    MA10700

    Abstract: MA3J700
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J700 (MA10700) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 3 1.25±0.1


    Original     		PDF 2002/95/EC) MA3J700 MA10700) MA10700 MA3J700

    marking M2w

    Abstract: MA10700 MA3J700
    Text: Schottky Barrier Diodes SBD MA3J700 (MA10700) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 1 2 (0.65) (0.65) 5° Symbol Rating Unit VR 40 V Repetitive peak reverse-voltage VRRM 40 V Average forward current


    Original     		PDF MA3J700 MA10700) marking M2w MA10700 MA3J700

    MA716

    Abstract: MA7D50 ma741 MA10799
    Text: Reference • Part Number List The order of Conventional Part Number (C Part No.) M Part No. Page (C Part No.) M Part No. Page (C Part No.) M Part No. Page (MA10700) MA3J700 113 (MA741WK) MA3J741E 119  MA2D760 23 (MA10701) MA3X701 151 (MA742) MA3J742


    Original     		PDF MA10700) MA10701) MA10702) MA10703) MA10704) MA10705) MA10798) MA10799) MA4S713) MA6S718) MA716 MA7D50 ma741 MA10799

    MA10700

    Abstract: MA3J700 m2w marking marking M2w
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J700 (MA10700) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward current (Average) IF(AV) = 500 mA rectification is possible


    Original     		PDF 2002/95/EC) MA3J700 MA10700) MA10700 MA3J700 m2w marking marking M2w

    MARKING SAS 05

    Abstract: marking M2w
    Text: Schottky Barrier Diodes SBD MA3J700 (MA10700) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 1 2 (0.65) (0.65) 0.9±0.1 1.3±0.1 2.0±0.2 5° • Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit


    Original     		PDF MA3J700 MA10700) MARKING SAS 05 marking M2w

    diode m2w

    Abstract: marking M2w MA3J700 m2w marking
    Text: Schottky Barrier Diodes SBD MA3J700 Silicon epitaxial planar type Unit : mm For high-frequency rectification 2.1 ± 0.1 1.25 ± 0.1 0.425 0.425 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 • S-mini type 3-pin package • Allowing to rectify under (IF(AV) = 500 mA) condition


    Original     		PDF MA3J700 diode m2w marking M2w MA3J700 m2w marking

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    MA7D52

    Abstract: No abstract text available
    Text: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)


    Original     		PDF MA2C700 MA2C700A MA2C719 MA2C723 MA2D749 MA2D749A MA2D750 MA2D755 MA2D760 MA2H735 MA7D52

    k11 zener diode

    Abstract: zener diode k11 diode k6 MA3DD82 MA2B150 MA3DF40 MA3DF30 MA2B171 MA21D350 MA3df3
    Text: Diodes Switching Diodes. K2 Switching Diodes . K2


    Original     		PDF MA24D56 MA24D58 MA24D70 MA24D74 MA3D749 MA3D749A MA3D750 MA3D750A MA3D752 MA3D752A k11 zener diode zener diode k11 diode k6 MA3DD82 MA2B150 MA3DF40 MA3DF30 MA2B171 MA21D350 MA3df3

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    Untitled

    Abstract: No abstract text available
    Text: Characteristics Quick Reference Guide • SBD for Power Electrical characteristics Ta = 25°C VRRM IF(AV) (V) (A) 30 30 Package Single-chip type VF max. (V) 20 5 0.47 MA3D798 10 3 0.47 MA3D799 TO-220D-B1 (2-pin) 1 40 45 5 50 3 1 TO-220D-A1 (3-pin) 0.55 3


    Original     		PDF MA2D760 MA3D761 MA2D755 MA3D756 MA3D760 MA3U760 MA3D752 MA3D752A MA3D755 MA3U755

    zener diode SMD marking code 27 4F

    Abstract: smd diode schottky code marking 2F smd zener diode code 5F panasonic MSL level smd zener diode code a2 SMD ZENER DIODE a2 smd zener 27 2f SMD zener marking code 102 A2 SMD zener SMD MARK A1
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MAZDxxx Series Silicon planar type 0.60±0.05 0.20±0.05 Unit: mm For constant voltage, constant current, waveform clipper and surge absorption circuit 0.12+0.05 –0.02 2 • Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) zener diode SMD marking code 27 4F smd diode schottky code marking 2F smd zener diode code 5F panasonic MSL level smd zener diode code a2 SMD ZENER DIODE a2 smd zener 27 2f SMD zener marking code 102 A2 SMD zener SMD MARK A1

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    2sc3052ef

    Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
    Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor

    mip411

    Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 mip411 MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291

    MA3DF30

    Abstract: MIP2F mip2fx MIP2KX PANASONIC SC107A IC 4026 internal structure MIP2K MA3DF46 ma3df46* ma3df30 MA2YD260G
    Text: 2009 ver. 2 Diode Series %JPEF4FSJFT Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF