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    LH5P864 Search Results

    LH5P864 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LH5P864 Sharp CMOS 512K (64K x 8) Pseudo-Static RAM Original PDF
    LH5P864N-80 Sharp CMOS 512K(64K x 8) pseudo-static RAM Original PDF

    LH5P864 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    64k Static RAM

    Abstract: 32-PIN LH5P864
    Text: LH5P864 FEATURES • 65,536 x 8 bit organization CMOS 512K 64K × 8 Pseudo-Static RAM PIN CONNECTIONS TOP VIEW 32-PIN SOP • Access time: 80 ns (MAX.) • Cycle time: 140 ns (MIN.) • Single +5 V power supply • Power consumption: Operating: 440 mW (MAX.)


    Original
    LH5P864 32-PIN 32-pin, 525-mil 32SOP 64k Static RAM LH5P864 PDF

    Untitled

    Abstract: No abstract text available
    Text: MEMORIES Pseudo Static RAMs w B it co n fig u ra tio n C apacity Model No. A cce ss tim e n s 60 - 256k x8 70 80 100 120 150 LH5P832 LH5P860 x8 LH5P864 512k LH5P1632 x 16 LH5P8128 1M Pseudo Static RAM x8 LH5P8129 x8 LH5PV8512 x 16 LH5PV16256 x 16 LH6P82


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    LH5P832 LH5P860 LH5P864 LH5P1632 LH5P8128 LH5P8129 LH5PV8512 LH5PV16256 LH6P82 LH5P832/D/N-10 PDF

    Cross Reference

    Abstract: Pseudostatic RAM TC51832
    Text: Pseudo-Static RAM Cross Reference PSEUDO-STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 32K 64K 128K X X X 8 8 8 128K x 8 w/CS 512K 2-50 X 8 SHARP MODEL LH5P832 LH5P864 LH5P8128 COMPETITIVE VENDOR COMPETITIVE MODEL ACCESS TIME PACKAGE OPTIONS Hitachi


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    LH5P832 HM65256B TC51832 LH5P864 HM658128A TC518128A TC518129A HM658512 TC518512 LH5P8128 Cross Reference Pseudostatic RAM TC51832 PDF

    Untitled

    Abstract: No abstract text available
    Text: LH5P864 FEATURES • 65,536 x C M O S 512K 64K x 8 Pseudo-Static RAM DESCRIPTION 8 bit organization • Access time: 80 ns (MAX.) • Cycle time: 140 ns (MIN.) • Power supply: 5 V ± 10% • Power consumption: 440 mW (MAX.) • Operating temperature: 0 to 70°C


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    LH5P864 32-pin, 525-mil LH5P862 512K-bit 32-PiN 5PB64-7 LH5I3864 --------------------------32-pin, PDF

    Untitled

    Abstract: No abstract text available
    Text: LH5P864 FEATURES • 65 ,5 3 6 x 8 bit organization • Access time: 80 ns M AX. • Cycle time: 140 ns (M IN .) CMOS 512K (64K x 8) Pseudo-Static RAM DESCRIPTION The LH5P862 is a 512K-bit Pseudo-Static RAM or­ ganized as 65,536 x 8 bits. It is fabricated using silicon-gate CM O S process technology. W ith its built-in


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    LH5P864 LH5P862 512K-bit 32-pin, 525-m 5PB64-9 LH5I3864 -------------------------------32-pin, 525-mil PDF

    Untitled

    Abstract: No abstract text available
    Text: LH5P864 FEATURES • 65,536 x CMOS 512K 64K x 8 Pseudo-Static RAM PIN CONNECTIONS 8 bit organization 32-PIN SOP TOP VIEW • Access time: 80 ns (MAX.) • Power consumption: Operating: 440 mW (MAX.) Standby (TTL level): 22 mW (MAX.) Standby (CMOS level): 2.75 mW (MAX.)


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    LH5P864 32-PIN 32-pin, 525-mil OP032-P-0525) PDF

    256k x 4

    Abstract: No abstract text available
    Text: MEMORIES ★Under development Capacity Configuration Model No. Access time ns 60 256k 32k x 8 70 Package SK BO 100 120 150 DIP SOP TSOP DIP LH5P832 — 28 28 LH5P860 n 28 32 64k x 8 LH5P864 — 32 512k Pseudo static RAM 32k x 16 LH5P1632 I- — 40 40 LH5P8128


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    LH5P832 LH5P860 LH5P864 LH5P1632 LH5P8128 LH5P8129 LH5P8512 LH21256 LH64256B 256k x 4 PDF

    Untitled

    Abstract: No abstract text available
    Text: LH5P864 C M O S 512K 64K x 8 Pseudo-Static RAM FEATURES PIN CONNECTIONS • 65,536 x 8 bit organization 32-PIN S O P T O P VIEW • Access time: 80 ns (MAX.) • Single +5 V power supply • Power consumption: Operating: 440 mW (MAX.) Standby (TTL level): 22 mW (MAX.)


    OCR Scan
    LH5P864 32-pin, 525-mil 512K-bit 32sop DDlbS75 PDF

    LH64256BK70

    Abstract: Lh64256bk-70
    Text: MEMORIES ★Under development • Pseudo S tatic RAMs Gipäfifty rüm ^H M o n Modal No. worfexblta t LH5P832/D/N-10 256k Supply.currant AOOMtttM# Cyetotime operating/standby (na)MAX. (na) MIN. 100 160 (mA) MAX. Supply voltage M Control signal« 65/3 32k x 8


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    LH5P832/D/N-10 28DIP/ 28SK-DIP/ 28SOP 32DIP/32SOP 32SOP 40DIP/40SOP LH5P832/D/N-12 LH5P860/N-80 LH5P864N-80 LH64256BK70 Lh64256bk-70 PDF

    LH61664AK-50

    Abstract: LH61665AK lh61665 LH5PV8512 16256S
    Text: PSEUDO SRAM/DYNAMIC RAM • PSEUDO SRAMs ♦ Features • Random access memory with ease of use equivalent to SRAM. Supply current MAX. C apacity Bit C onfiguration 256k x 8 Model No. LH 5P 832/D /N -10/12 Access time ns MAX. Cycle time (ns) MIN. O perating


    OCR Scan
    LH5P864N 5P1632/N-80/15 32SOP DIP/40SOP 32DIP/32SOP/32TSOP 32TSOP DIP/32SOP/32TSOP( /32TS 44TSO LH61664AK-50 LH61665AK lh61665 LH5PV8512 16256S PDF

    lh57257

    Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
    Text: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429


    OCR Scan
    IR2E201 IR2E24 IR2E27/A IR2E28 IR2E29 IR2E30 IR2E31/A IR2E32N9 IR2E34 IR2E41 lh57257 IR2E31 IR2E01 IR2C07 IR2E27 IR2E19 IR2E31A IR3n06 IR2E02 PDF

    LQ070T5BG01

    Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
    Text: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66


    OCR Scan
    109-n GL1PR112. GL1PR135. GL1PR136. GL1PR211. GL1PR212. GL3KG63. GL3P201. GL3P202. GL3P305. LQ070T5BG01 LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506 PDF

    IR3Y29B

    Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02
    Text: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX


    OCR Scan
    ARM710 ARM810 IR3T24 IR3T24N IR3Y05Y IR3Y08 IR3Y12B IR3Y18A IR3Y21 IR3Y26A IR3Y29B ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR2E02 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS 512K 64K x 8 Pseudo^Static RAM FEATURES • 66,536 x 8 bit organization • Access time: 80 ns (MAX.) • Cycle time: 140 ns (MIN.) • Single -»5 V power supply • Power consumption: Operating: 440 mW (MAX.) Standby (TTL level): 22 mW (MAX) Standby (CMOS level): 2.75 mW (MAX.)


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    32-PIN 32-pin, 525-mil 32S0P 525-mH LH5P864 I-------80 PDF

    IR2E01

    Abstract: LR4087 LZ8420M LZ9GG13 LI3160 IR2C36 LZ2423A SM8205 LZ9GG13M LR39901
    Text: Index Model No. A R M 7 D C PU C o re B i-C M O S 1 28 4 0 ,4 2 C 62 IR 3 Y 1 2 A 50 LH1532 49 LH 531V 00 2.4 IR 2 E 2 8 62 IR 3 Y 1 4 50 LH1536 49 LH 532000B 3,4 IR 2 E 2 9 62 IR 3 Y 1 5 50 LH 1540A 49 L H 5 3 2 00 0 B -1 3,4 IR 2 E 3 0 62 IR 3 Y 1 6 50


    OCR Scan
    IR3Y21 LH1532 LH1536 LH1548 LH1549 LH1555 LH1556 LH1559 LH1560 LH1562 IR2E01 LR4087 LZ8420M LZ9GG13 LI3160 IR2C36 LZ2423A SM8205 LZ9GG13M LR39901 PDF