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    LH28F008SAH Search Results

    LH28F008SAH Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    LH28F008SAHR Sharp 8 MBIT(1 MBIT x 8)FLASH MEMORY Original PDF
    LH28F008SAHR-85 Sharp Flash Memory Original PDF
    LH28F008SAHT-85 Sharp Flash Memory 8M (1M x 8) Original PDF
    LH28F008SAHT-T9 Sharp Flash Memory, 8Mbit, Sectored, 5V Supply, TSOP, 40-Pin Original PDF

    LH28F008SAH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    13B1

    Abstract: LH28F008SAHT-85
    Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F008SAHT-85 Flash Memory 8M 1M x 8 (Model No.: LHF08S51) Spec No.: EL103202A Issue Date: August 27, 1998 SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE. Suggested applications (if any) are for standard use; See Important Restrictions for limitations on special applications. See Limited


    Original     		PDF LH28F008SAHT-85 LHF08S51) EL103202A 13B1 LH28F008SAHT-85

    80386SL

    Abstract: 82360sl LH28F008SA LH28F008SAHT-T9
    Text: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F008SAHT-T9 Flash Memory 8Mbit 1Mbitx8 (Model Number: LHF08ST9) Lead-free (Pb-free) Spec. Issue Date: October 5, 2004 Spec No: EL16X022 LHF08ST9 ●Handle this document carefully for it contains material protected by international


    Original     		PDF LH28F008SAHT-T9 LHF08ST9) EL16X022 LHF08ST9 80386SL 82360sl LH28F008SA LH28F008SAHT-T9

    LH28F008SAHT-85

    Abstract: 13B1
    Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F008SAHT-85 Flash Memory 8M 1Mb x 8 (Model No.: LHF08S51) Spec No.: EL103202A Issue Date: August 27, 1998 SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE. Suggested applications (if any) are for standard use; See Important Restrictions for limitations on special applications. See Limited


    Original     		PDF LH28F008SAHT-85 LHF08S51) EL103202A LH28F008SAHT-85 13B1

    LH28F008SAHR-85

    Abstract: flash
    Text: LH28Fxxx FLASH MEMORY FLASH NON-VOLATILE MEMORY FLASH E2ROM FLASH ROM READ ONLY MEMORY ETOX LH28F008SAHR-85 8M 1M x 8 Flash Memory


    Original     		PDF LH28Fxxx LH28F008SAHR-85 flash

    lh28f800bvhe-tv85

    Abstract: LH28F128BFHED LH28F128BFHED-PWTL90 LH28F160S5HNS-L70 LH5116H-10 LH28F160S3HNS-L10 lh28f128bfht-pw LH28F320S5HNS-L90 LH28F008BJT-BTLZ1 Product Selector Guide
    Text: Memory Product Selector Guide SYMMETRICAL FLASH DENSITY PRODUCT FAMILY ORG. PART NUMBER PACKAGE READ VOLTAGE PROGRAM VOLTAGE LH28F008SCT-L85 LH28F008SCHT-L85 LH28F008SCT-L12 3 V or 5 V 40TSOP LH28F008SAT-85 5V LH28F008SAHT-85 8M Cobra x8 3 V, 5 V or 12 V


    Original     		PDF LH28F008SCT-L12 40TSOP LH28F008SAT-85 LH28F008SAHT-85 LH28F008SAN-85 LH28F008SAN-12 44SOP LH28F008SCHT-L85 LH28F008SCT-L85 lh28f800bvhe-tv85 LH28F128BFHED LH28F128BFHED-PWTL90 LH28F160S5HNS-L70 LH5116H-10 LH28F160S3HNS-L10 lh28f128bfht-pw LH28F320S5HNS-L90 LH28F008BJT-BTLZ1 Product Selector Guide

    LH28F640BFHE-PBTLDY

    Abstract: lh28f320s5hns-zp LH28F160S5T-L70A LH28F016 LH28F008SAT-ZW lh5116na-10 LH28F640BFHE-PBTL90 LH5164A-10L LH5164AN-80L lh5116-10
    Text: Product Change Notice PCN : Lead (Pb)–free Packages October 15, 2004 This document updates PCN: ST-03-Z-06E issued January 23, 2004. Objective: Existing Memory ICs are changing from a lead (Pb) process to a lead-free process. Process Change Key Points 1) SHARP is changing the lead plating process from lead (Pb) to lead-free to meet the demands


    Original     		PDF ST-03-Z-06E connectiH5116D-10F LH5116H-10F LH5116NA-10F LH5164A-10LF LH5164AD-10LF LH5164AHN-10LF LH516AN0 LH28F640BFHE-PBTLDY lh28f320s5hns-zp LH28F160S5T-L70A LH28F016 LH28F008SAT-ZW lh5116na-10 LH28F640BFHE-PBTL90 LH5164A-10L LH5164AN-80L lh5116-10

    LH28F128SPHTD-PTL12

    Abstract: 56TSOP lh28f800bvhe-tv85 lh5116h10 LH28F320SKTD-L70 LRS1826A TV85 LH28F008SC LH28F160S5T-L70A LH52256CHN-70LL
    Text: Memory Product Selector Guide 8M AND 16M SYMMETRICAL FLASH DENSITY ORG. PART NUMBER PACKAGE READ VOLTAGE PROGRAM VOLTAGE LH28F008SCT-L85 LH28F008SCHT-L85 LH28F008SCT-L12 3 V or 5 V 40TSOP LH28F008SAT-85 x8 85 I 120 C 85 C 85 I 85 C 120 C 12 V LH28F008SCN-L85


    Original     		PDF LH28F008SCHT-L85 LH28F008SCT-L12 40TSOP LH28F008SAT-85 LH28F008SCT-L85 LH28F008SCN-L85 LH28F008SAR-85 LH28F008SAHT-85 LH28F008SAN-85 ID242K01 LH28F128SPHTD-PTL12 56TSOP lh28f800bvhe-tv85 lh5116h10 LH28F320SKTD-L70 LRS1826A TV85 LH28F008SC LH28F160S5T-L70A LH52256CHN-70LL

    Untitled

    Abstract: No abstract text available
    Text: SHARP February 1997 FLASH MEMORY LH28F008SAHR-85 Ver. 2.0E SHARP CORPORATION Engineering Department 2 Flash Memory Development Center Tenri Integrated Circuits 1C Group I L HF 0 8 S 1 6 1 CONTENTS 1 FEATURES 2 2 PRODUCT OVERVIEW 3 3 PRINCIPLES OF OPERATION


    OCR Scan     		PDF LH28F008SAHR-85

    80386SL microprocessor features

    Abstract: 82360SL 80386sl intel 80386SL AH 36
    Text: I LHF 0 8 S 1 6 LH28F008SAHR-85 8 MBIT 1 MBIT x 8 FLASH MEMORY 1. FEATURES •High-Density Symmetrically Blocked Architec­ ture - Sixteen 64 KByte Blocks • Very High-Performance Read - 85 ns Maximum Access Time • SRAM-Compatible Write Interface •Extended Cycling Capability


    OCR Scan     		PDF LH28F008S 40-Lead 80386SL microprocessor features 82360SL 80386sl intel 80386SL AH 36

    Untitled

    Abstract: No abstract text available
    Text: MEMORIES ★ Under development Supply voltage r a n a r it u L.dpacixy Operating temp. Configuration Erase block Wordsxbits size (bytes) Model No. Access time(ns) -—- 1 8M 1M x 8 64k LH28F008SAH - 40 to 85 5 V/12 V-Dualpower-supply - 25 to 8 5 - >★LH28F008SAH-KF


    OCR Scan     		PDF LH28F008SAH LH28F008SAH-KF LH28F016SA LH28F020SU-L LH28F020SUH-L LH28F004SU-LF LH28F004SUH-LF} LH28F400SU-LF 256kx LH28F400SUH-LF

    Untitled

    Abstract: No abstract text available
    Text: 8M 1M x 8 Flash Memory • High-Density Symmetrically Blocked Architecture - Sixteen 64K Blocks • Extended Cycling Capability - 100,000 Block Erase Cycles - 1.6 Million Block Erase Cycles per Chip • Automated Byte Write and Block Erase - Command User Interface


    OCR Scan     		PDF 44-Lead 40-Lead LH28F008SA DD1SS63 LH28F008SA

    LQ070T5BG01

    Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
    Text: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66


    OCR Scan     		PDF 109-n GL1PR112. GL1PR135. GL1PR136. GL1PR211. GL1PR212. GL3KG63. GL3P201. GL3P202. GL3P305. LQ070T5BG01 LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506

    Untitled

    Abstract: No abstract text available
    Text: MEMORIES ★ Under developm ent lal-Power-Supply Flash Mem ories Capacity 8M 16M Configuration Erase Mock size wordsxbits (bytes) 1M 2M 1M X 8 16 X Access time (ns) MAX. Supply voltage LH28F008SAT/R/N-85 85 Vcc = 5 V LH28F008SAT/R/N-12 120 Vpp = 12 V ★LH28F008SAT/R/B-KF85


    OCR Scan     		PDF LH28F008SAT/R/N-85 LH28F008SAT/R/N-12 LH28F008SAT/R/B-KF85 LH28F008SAT/R/B-KF12 40TSOP /44SO 40TSO /42FB

    IR3Y29B

    Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02
    Text: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX


    OCR Scan     		PDF ARM710 ARM810 IR3T24 IR3T24N IR3Y05Y IR3Y08 IR3Y12B IR3Y18A IR3Y21 IR3Y26A IR3Y29B ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR2E02

    A10q

    Abstract: No abstract text available
    Text: LH28F008SA-K/SAH-K SHARP LH28F008SA-K/SAH-K CONTENTS COMPARISON TABLE.904 PIN


    OCR Scan     		PDF LH28F008S LH28F008SA-K/SAH-K 40-pin TSOP040-P-1020) TSQP040-P-1020) LH28F008SAXX-K85 LH28F008SAXX-K12 002H0bl A10q

    IR2E27A

    Abstract: IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31
    Text: lndeX Model No. ARM7D CPU Core28,32,33 ARM7DM 28,33 CMOS CMOS CMOS CMOS 76 5A A F G 44 44 44 44 ID1 series ID2 series ID3 seríes ID21K064 ID21K128 ID21K256 ID21K512 ID21M010 ID21M015 ID21M020 ID21M040 ID22K256 ID22K512 ID22M010 ID22M020 ID22M040 ID22M080


    OCR Scan     		PDF Core28 IR2C24A/AN IR2C26 IR2C30/N IR2C32 IR2C33 IR2C34 IR2C36 IR2C38/N IR2C43 IR2E27A IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31

    56TSOP

    Abstract: LH28F020SUT LH28F032SUTD-10 LH28F016SAT
    Text: MEMORIES • Flash Memories Capacity Configuration Erasable block size bytes (words x bits) Model No. Accees time (ns) MAX. Supply voltage (V) ★LH28F020SUT/N-N60 60 Vcc=5 ★LH28F020SUT/N-N80 80 Vpp=5 Read current (mA)MAX. Operating temperature (1C) Package


    OCR Scan     		PDF 40TSOP /44SOP 56TSOP 64k/32k/16k LH28F020SUT/N-L12 LH28F020SUT/N-L15 LH28F004SUT-N60 LH28F004SUT-N80 LH28F004SUT-L12 LH28F004SUT-L15 LH28F020SUT LH28F032SUTD-10 LH28F016SAT

    Untitled

    Abstract: No abstract text available
    Text: MEMORIES \ Flash Memories • Symmetrical Block Sm artVoltage Flash Memories S up p ly vo lta g e C a p a c ity Bit configuration sE efbyte“ i ^words / O p erating tem p. M odel No. Vcc A c c e ss tim e V fC ) R e m a rks (ns) 70 85 90 100 120 150170


    OCR Scan     		PDF 64k-byte LH28F002SC-L LH28F002SCH-L 64k-byte LH28F004SC-L LH28F004SCH-L mem40 LH28F016SUH LH28F008SA-K

    55B0

    Abstract: No abstract text available
    Text: 8M 1M X 8 Flash Memory • High-Density Symmetrically Blocked Architecture - Sixteen 64K Blocks • Extended Cycling Capability - 100,000 Block Erase Cycles - 1.6 Million Block Erase Cycles per Chip • Automated Byte Write and Block Erase - Command User Interface


    OCR Scan     		PDF 44-Lead 40-Lead DD1SS62 LH28F008SA 44-pin 40-pin 55B0