L7C106 Search Results

Contextual Info: L Q Q IC L7C106 25 6 K x 4 Static RA M D E V IC E S IN C O R P O R A I h . FEATURES DESCRIPTION □ 256K x 4 Static R A M w ith Chip Select Pow erd ow n, O utpu t E nable □ A uto-Pow erdow n Design □ A dvanced C M O S T echnology □ H igh Speed — to 17 ns m axim um

Contextual Info: “ L7C106 ——— — 2 5 6K x 4 Static RA M II □ 256K x 4 Static RAM w ith Chip Select Pow erdow n, O utp u t Enable □ □ □ □ Auto-Powerdown™ Design A dvanced CMOS Technology High Speed — to 17 ns m axim um Low Pow er O peration Active: 400 mW typical at 25 ns

Contextual Info: jjjm ÆmSmmkjjjjjj jmSSm L7C106 „ „ „ I mm MMMM 256K x 4 Static RAM DEVICES INCORPORATED DESCRIPTION FEATURES □ 256K x 4 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns maximum

Contextual Info: L7C106 256K x 4 Static RAM FEATURES 3 DESCRIPTION □ 256K x 4 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns maximum □ Low Power Operation Active: 400 mW typical at 25 ns

L7C106DC17

Abstract: L7C106DC20 L7C106DC25 L7C106PC17 L7C106PC20 L7C106PC25 CY7C106
Contextual Info: L7C106 L7C106 DEVICES INCORPORATED 256K x 4 Static RAM 256K x 4 Static RAM DEVICES INCORPORATED DESCRIPTION The L7C106 is a high-performance, low-power CMOS static RAM. The storage circuitry is organized as 262,144 words by 4 bits per word. The 4 Data In and Data Out signals share I/O pins.

CY7C106

Abstract: L7C106DC17 L7C106DC20 L7C106DC25 L7C106PC17 L7C106PC20 L7C106PC25
Contextual Info: L7C106 L7C106 DEVICES INCORPORATED 256K x 4 Static RAM 256K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 256K x 4 Static RAM with Chip Select Powerdown, Output Enable q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 17 ns maximum

Contextual Info: L7C106 256K x 4 Static RAM DEVICES INCORPORATED I FEATURES DESCRIPTION □ 256K x 4 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns maximum □ Low Power Operation Active: 400 mW typical at 25 ns

Contextual Info: jjjm ÆmSmmkjjjjjj jmSSm MMMM „„„I L7C106 mm 256K x 4 Static RAM DEVICES INCORPORATED DESCRIPTION FEATURES □ 256K x 4 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns maximum

L29C* 8 pin SMD

Abstract: 5962-88733 barrel shifter 32-bit 18 x 16 barrel shifter LF2246 LF2247 LF2249 LF2250 LF2272 LF3310
Contextual Info: DEVICES INCORPORATED DSP PRODUCTS PART NO. SPEED ns COM. MIL. PRODUCT DESCRIPTION PACKAGE AVAILABILITY VIDEO IMAGING PRODUCTS LF2242 12/16-bit Half-Band Digital Filter 25 — 44-lead PLCC/PQFP LF2246 LF2247 LF2249 11 x 10-bit Image Filter 11 x 10-bit Image Filter with Coefficient RAM

106E capacitor

Contextual Info: L7C10S L7C1CG 256K x 4 Static RAM □256K x 4 Static RAM with Chip Select Powerdown, Output Enable □Auto-Powerdown Design □Advanced CMOS Technology □High Speed — to 17 ns maximum □Low Power Operation Active: 400 mW typical at 25 ns Standby: 5 mW typical

PDM41257SA15D

Abstract: Paradigm 41256 PDM41024S20L32 PDM41024-S20L32 PDM41257LA15D MT5C1005C CY7C199-35DMB SRAM Cross Reference EDI84256LPS25TB 41256
Contextual Info: National Semiconductor Part Numbering System N S 41024 L 20 E -SMD Grade Package Code Speed Grade Power Level Device Type /883 MIL-STD-883 Level B AC/DC tested at –55, +25 and +125°C with High Temp Burn-in -SMD DESC Standard Military Drawing AC/DC tested at –55, +25 and +125°C with High Temp Burn-in