KM416S4030BT-G10
Abstract: KMM366S424BTL-G0 KMM366S424BTL
Text: KMM366S424BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200mV.
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KMM366S424BTL
200mV.
66MHz
KM416S4030BT-G10
KMM366S424BTL-G0
KMM366S424BTL
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Untitled
Abstract: No abstract text available
Text: Preliminary Intel 1.0 SDRAM MODULE KMM366S424BTL_ Revision History Revision .l November 1997 This spec has changed in accordance with New Binning [s F ' ELECTROftSSCS - 1 - REV. 1 Nov. '97 Preliminary Intel 1.0 SDRAM MODULE KMM366S424BTL KMM366S424BTL SDRAM DIMM
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KMM366S424BTL_
KMM366S424BTL
KMM366S424BTL
366S424BTL
400mil
168-pin
54Max)
416S4030BT
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KMM366S424BTL-G0
Abstract: KMM366S424BTL
Text: KMM366S424BTL PC66 SDRAM MODULE KMM366S424BTL SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S424BTL is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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KMM366S424BTL
KMM366S424BTL
4Mx64
4Mx16,
400mil
168-pin
KMM366S424BTL-G0
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KMM366S424BTL-G0
Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
Text: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .
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KM44S4020CT
KM48S2020CT
KM416S1020CT
KM416S1021CT
1Mx16
KM44S16020BT
KM48S8020BT
KM416S4020BT
------------------------------------16Mx4
4Mx64
KMM366S424BTL-G0
KMM466S824BT2F0
KMM466S424BT-F0
KMM466S824BT2-F0
4MX16
16MX8
KM44S4020CT
KM48S2020CT
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