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    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC 42E ]> B 7Tb*4142 001003b S Ë3SÎ1GK KM41C1000BL CMOS DRAM 1MX1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000BL is a C M O S high speed 1,048,576 x 1 Dynamic Random Access Memory. Its de­


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    PDF 001003b KM41C1000BL KM41C1000BL KM41C1000BL- 110ns KM41C1Ã 130ns 150ns KM41C1000BL-10

    YC 2604

    Abstract: No abstract text available
    Text: KM41C1000BI­ CMOS DRAM 1M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perfo rm ance range: The S am sung KM41C1000BL is a CMOS high speed 1,048,576 x 1 D ynam ic Random A ccess Memory. Its de­ sign is op tim ize d fo r high pe rform ance ap p lica tio n s


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    PDF KM41C1000BI 130ns 150ns 180ns KM41C1000BL 18-LEAD 20-LEAD YC 2604

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • 7=ib4]i 42 ü ü m 4 7 cl flES DRAM MODULES KMM591020AN 1 M x 9 DRAM SIMM Memory Module with Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM591020AN is a 1M b it x 9 Dynamic RAM high density memory module. The Samsung


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    PDF KMM591020AN KMM591020AN KM44C1020ALJ 20-pin KM41C1000BLJ 30-pin 130ns 150ns

    KM424C256Z

    Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
    Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J


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    PDF KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM424C256Z SIMM 30-pin 30-pin SIMM RAM KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"

    Untitled

    Abstract: No abstract text available
    Text: KMM591020AN DRAM MODULES 1 M x 9 DRAM SIM M Memory Module with Low Power GENERAL DESCRIPTION FEATURES • Performance range: I rac tcAC tnc 70ns 20ns 130ns 80ns 20ns 150ns 100ns 25ns 180ns KMM591020AN-7 KMM591020AN-8 KMM591020AN-10 • • • • • •


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    PDF KMM591020AN KMM591020AN-7 KMM591020AN-8 KMM591020AN-10 100ns 130ns 150ns 180ns KMM591020AN

    KM41C1000BJ

    Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z
    Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page


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    PDF KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C1000BJ KM44C256BP KM41C1000BP KM41C1001BP KM44C256BJ km4164 KM44C1000LJ KM41C464Z