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Catalog Datasheet	MFG & Type	PDF	Document Tags
K1B5616BKB Abstract: transistor d261 ADQ61 K1B5616BKB-I Text: Rev. 1.0, Apr. 2010 K1B5616BKB 256Mb B-die UtRAM 16Mb x16 , Supply Voltage (1.7V ~ 1.95V) Multiplexed Uni-Transistor Random Access Memory datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed	Original	PDF	K1B5616BKB 256Mb K1B5616BKB transistor d261 ADQ61 K1B5616BKB-I

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Abstract: transistor d261 ADQ61 K1B5616BKB-I
Text: Rev. 1.0, Apr. 2010 K1B5616BKB 256Mb B-die UtRAM 16Mb x16 , Supply Voltage (1.7V ~ 1.95V) Multiplexed Uni-Transistor Random Access Memory datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

Original

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K1B5616BKB 256Mb K1B5616BKB transistor d261 ADQ61 K1B5616BKB-I