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    HXNV01600

    Abstract: No abstract text available
    Text: HXNV01600 16 Megabit Non-Volatile Magneto-Resistive RAM Features • ■ ■ PRODUCTION - Release Review - -17 28Jun Jun2014 201414:05:31 03:55:11MST MST- -Printed Printedon on26 18Jun Jul 2014 ■ ■ ■ ■ ■ Total Dose Hardness 1x106 rad Si Dose Rate Upset Hardness


    Original     		PDF HXNV01600 1x106 1x1010 1x1012 1x10-10 1x1014 ADS-14229 HXNV01600

    P4C164LL

    Abstract: No abstract text available
    Text: P4C164LL VERY LOW POWER 8Kx8 STATIC CMOS RAM FEATURES VCC Current Commercial/Industrial — Operating: 55 mA — CMOS Standby: 3 µA Access Times —80/100 (Commercial or Industrial) —90/120 (Military) Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE1, CE2 and OE


    Original     		PDF P4C164LL 28-Pin P4C164LL SRAM116 SRAM116 Oct-2005 Aug-2006