AN602
Abstract: ca capacitor IRD2 GD Rectifiers 500C BYV255 VT25 diode gp SRD12 St gp 04s
Text: AN602 APPLICATION NOTE MODELLING PARALLEL OPERATION OF POWER RECTIFIERS WITH PSPICE INTRODUCTION The behavior of semiconductor components is always linked with the junction temperature. This is the case, for example, in current-sharing between diodes connected in parallel. The current in each
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AN602
AN602
ca capacitor
IRD2
GD Rectifiers
500C
BYV255
VT25
diode gp
SRD12
St gp 04s
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STTA12060
Abstract: AN601 STTA806D STTA12-060 TB diode freewheeling diode 5A STTA1206D STTB1206D STTB806D transistor 600v 500a
Text: AN601 APPLICATION NOTE NEW HIGH VOLTAGE ULTRA-FAST DIODES: THE TURBOSWITCHTM A and B SERIES INTRODUCTION In today’s power converter, the commutation speed of the transistor and the operating frequencies are higher and higher. Fast diodes used for freewheel, snubber, and rectifier functions become one of the main causes of the
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AN601
00V-1200V,
STTA12060
AN601
STTA806D
STTA12-060
TB diode
freewheeling diode 5A
STTA1206D
STTB1206D
STTB806D
transistor 600v 500a
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AN599
Abstract: AN-599 BY255 diode BYT261 100C BY255 BYT60P BYV255 BYW51
Text: AN599 APPLICATION NOTE PARALLEL OPERATION OF POWER RECTIFIERS INTRODUCTION In parallel operation of several diodes, the current is not split into equal parts because of differences between forward characteristics. The current through the rectifier having the lowest voltage drop will be higher than the current through the
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AN599
AN599
AN-599
BY255 diode
BYT261
100C
BY255
BYT60P
BYV255
BYW51
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Untitled
Abstract: No abstract text available
Text: HARRIS SENICOND SECTOR t>AE D • M3D2271 005110 3 115 ■ HAS PCF14N05LW PCF14NÛ5LD H a r r is SEMICONDUCTOR January1993 N-Channel MOS Chip Features Die • Passivated • Contact Metallization • Gate and Source - Aluminum Silicon • Drain - Tri-Metal (Al-Ti-Ni
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M3D2271
PCF14N05LW
PCF14N
Mil-Std-750,
RFD14N05L
RFD14N05LSM
RFP14N05L
PCF14N05LD
1-800-4-HARRIS
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TM497BBK32S
Abstract: Q 4.194 304 417400D TM893CBK32 TM893CBK32S
Text: TM497BBK32, TM497BBK32S 4194 304 BY 32-BIT DYNAMIC RAM MODULE TM893CBK32, TM893CBK32S 8 388 608 BY 32-BIT DYNAMIC RAM MODULE SMMS433-JANUARY1993 Organization TM497BBK32 . . . 4 194 304 x 32 TM893CBK32 . . . 8 388 608 x 32 • Presence Detect • Performance Ranges:
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TM497BBK32,
TM497BBK32S
32-BIT
TM893CBK32,
TM893CBK32S
SMMS433-JANUARY1993
TM497BBK32
TM893CBK32
72-Pln
Q 4.194 304
417400D
TM893CBK32
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dynamic ram module
Abstract: No abstract text available
Text: TM124TBK40, TM124TBK40S1 048 576 BY 40-BIT DYNAMIC RAM MODULE TM248VBK40, TM248VBK40S 2 097152 BY 40-BIT DYNAMIC RAM MODULE SMMS140-JANUARY1993 Vcc Tolerance ±10% Performance Ranges: ACCESS TIME tRAC ACCESS ACCESS READ OR TIME TIME WRITE •a a tCAC CYCLE
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TM124TBK40,
TM124TBK40S1
40-BIT
TM248VBK40,
TM248VBK40S
SMMS140-JANUARY1993
TM124TBK40
124TBK40
72-pin
dynamic ram module
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harris
Abstract: h20 mosfet IRFP240 Harris Semiconductor Harris Semiconductor irfp240 415A IRF240 IRF640 PCF240D transistor AL
Text: H A RR IS S E M I C O N D SE CT OR bflE D • M30 2 27 1 O O S l l l b 034 ■ HAS PCF240W PCF240D HARRIS S E M I C O N D U C T O R January1993 N-Channel MOS Chip Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum - Drain • Tri-Metal Al-Tl-Nl
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M3D3271
PCF240W
PCF240D
Mil-Std-750,
IRF640
IRFP240
IRF240
PCF240W
PCF240D
170x200
harris
h20 mosfet
IRFP240
Harris Semiconductor
Harris Semiconductor irfp240
415A
IRF240
IRF640
transistor AL
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Untitled
Abstract: No abstract text available
Text: TMS426800, TMS426800P 2 097152 WORD BY 8-BIT LOW VOLTAGE DYNAMIC RANDOM-ACCESS MEMORIES SMKS268-JANUARY1993 Organization . . . 2 097 152 x 8 Single 3.3-V Power Supply ±0.3 V Tolerance DE P A C K A G E t DZ P A C K A G E t (TOP VIEW) (TOP VIEW) vcc C 1 u
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TMS426800,
TMS426800P
SMKS268-JANUARY1993
426800/P-70
426800/P-80
SMKS269-JANUAFIY
AO-A11
TMS426800
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transistor N43
Abstract: harris 34
Text: HARRIS SENICOND SECTOR g ì H W bôE D • 4302271 OGSlllfl ÌO? ■ HAS PCF420W a r r is F4SP SE MI C ON D UC T O R January1993 N-Channel MOS Chip Features Die • Passivated • Contact Metallization • Gate and Source - Aluminum - Drain - Tri-Metal AI-TI-Ni
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PCF420W
Mil-Std-750,
IRF820
IRFF420
IRFU420
PCF420W
PCF420D
1-800-4-HARRIS
transistor N43
harris 34
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rfd3055rle
Abstract: RFD3055RLESM
Text: H A RR IS SEIIICOND SECT OR bflE D • 430 2 27 1 DDSlDHfl S'il ■ HAS PCF12N06RLEW PCF12N06RLED H A R R IS S E M I C O N D U C T O R January1993 N-Channel MOS Chip Die Features • Passivated • Contact Metallization - Gate and Source - Aluminum Silicon
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PCF12N06RLEW
PCF12N06RLED
MII-Std-750,
RFD12N06RLE
RFD12N06RLESM
RFD3055RLE
RFD3055RLESM
RFP12N06RLE
RFP3055RLE
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HARRIS IRFD110
Abstract: IRF510
Text: H AR RIS SEIUCOND SECTOR bflE D • 430EB71 O D S lD ib ■ HAS PCF110W HARRIS a 41b SEMICONDUCTOR P January1993 ^ j F 1 1 O D N-Channel MOS Chip Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum - Drain - Tri-Metal AI-Ti-NI
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430EB71
PCF110W
ry1993
Mll-Std-750,
IRF510
IRFD110
IRFU110
IRFF110
2N6782
PCF110W
HARRIS IRFD110
IRF510
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Untitled
Abstract: No abstract text available
Text: H A RR IS S E M I C O N D SECT OR bflE 5 • Œ\ h a r r i s \M J 430 2 27 1 □ 0 5 1 DÛ 4 .7T4 ■ HAS PCF15N06LW PCF15N06LD S E M I C O N D U C T O R January1993 N-Channel MOS Chip Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum
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PCF15N06LW
PCF15N06LD
ry1993
MII-Std-750,
RFM15N06L
RFP15N06L
PCF15N06LD
1-800-4-HARRIS
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tcs-f
Abstract: No abstract text available
Text: TMS426100, TMS426100P 16777 216-BIT LOW-VOLTAGE DYNAMIC RANDOM-ACCESS MEMORY SMKS261-JANUARY1993 Organization . . . 16 777 216 x 1 DJ PA C K A G E t TOP VIEW Single 3.3-V Power Supply (±0.3-V Tolerance) 1 V CC [ Low Power Dissipation (TMS426100P Only) - 100 nA CMOS Standby
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TMS426100,
TMS426100P
216-BIT
SMKS261-JANUARY1993
426100/P-60
426100/P-70
426100/P-8Q
426100/P-10
tcs-f
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CAC P60
Abstract: No abstract text available
Text: TMS427400, TMS427400P 4194 304-WORD BY 4-BIT LOW-VOLTAGE DYNAMIC RANDOM-ACCESS MEMORIES SMKS274-JANUARY1993 DJ PACKAGEt TOP VIEW Organization . . . 4194 304 x 4 Single 3.3-V Power Supply (± 0.3 V Tolerance) V CC c 1 DQ1 : 2 DQ2 : 3 Low Power Dissipation (TMS427400P)
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TMS427400,
TMS427400P
304-WORD
SMKS274-JANUARY1993
TMS427400P)
427400/P-6
SMKS274-JAN
CAC P60
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Untitled
Abstract: No abstract text available
Text: MOSAIC S E M I C O N D U C T O R INC LIE ]> h 35337•= D D G n ? 2 QbT * M O C 128K X 8 SRAM Module moXaic PUMA 67S4000-85/10/12 Issue 1.0 : January 1993 ADVANCE PRODUCT INFORMATION Mosaic Semicondu x- \
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67S4000-85/10/12
MIL-STD-883
S4000
128Kx32
256Kx16
512Kx8)
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Untitled
Abstract: No abstract text available
Text: TMS426400, TMS426400P 4194 304-WORD BY 4-BIT LOW-VOLTAGE DYNAMIC RANDOM-ACCESS MEMORIES SMKS264-JANUARY 1993 DJ PACKAGEt TOP VIEW Single 3.3-V Power Supply (± 0.3 V Tolerance) V CC [ DQ1 [ Low Power Dissipation (TMS426400P) - 100 pA CMOS Standby - 100 pA Self-Refresh
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TMS426400,
TMS426400P
304-WORD
SMKS264-JANUARY
TMS426400P)
SMKS264-JANUAFT/
TMS42S400
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a42s
Abstract: Mosaic OS
Text: MOSA IC S E M I C O N D U C T O R INC blE D • b 3 S 3 3 ? T □ □ □ 1 7 4 ‘î T1S ■ MOC 128K X 8 SRAM molate MSM8128-45/55/70 Issue 3.2 : January 1993 Pin Definition S em iconductor Inc. 131,072 X 8 CMOS High Speed Static RAM Features Very Fast Access Times of 45/55/70 ns
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b3S33
MSM8128-45/55/70
50jiW
150mW
MIL-STD-883
MIL-STD-683
-32pin0
-32padLC
a42s
Mosaic OS
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