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    IXYH50N120C3D1 Price and Stock

    IXYS Corporation IXYH50N120C3D1

    IGBT 1200V 90A TO-247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXYH50N120C3D1 Tube 360 1
    • 1 $15.16
    • 10 $15.16
    • 100 $9.296
    • 1000 $7.91251
    • 10000 $7.91251
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    Mouser Electronics IXYH50N120C3D1 533
    • 1 $13.42
    • 10 $10.83
    • 100 $9.29
    • 1000 $8.01
    • 10000 $8.01
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    Future Electronics IXYH50N120C3D1 Tube 300
    • 1 -
    • 10 -
    • 100 $7.98
    • 1000 $7.85
    • 10000 $7.85
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    IXYH50N120C3D1 Tube 300
    • 1 -
    • 10 -
    • 100 $7.98
    • 1000 $7.85
    • 10000 $7.85
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    Quest Components IXYH50N120C3D1 4
    • 1 $12.9134
    • 10 $9.6851
    • 100 $9.6851
    • 1000 $9.6851
    • 10000 $9.6851
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    TME IXYH50N120C3D1 293 1
    • 1 $13.56
    • 10 $10.7
    • 100 $9.68
    • 1000 $9.68
    • 10000 $9.68
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    New Advantage Corporation IXYH50N120C3D1 200 1
    • 1 -
    • 10 -
    • 100 $18
    • 1000 $16.8
    • 10000 $16.8
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    Littelfuse Inc IXYH50N120C3D1

    Disc Igbt Xpt-Genx3 To-247Ad/ Tube |Littelfuse IXYH50N120C3D1
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    Newark IXYH50N120C3D1 Bulk 300
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    • 1000 $8.3
    • 10000 $8.3
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    IXYH50N120C3D1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXYH50N120C3D1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 90A 625W TO247 Original PDF

    IXYH50N120C3D1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IXYH50N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC100 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 50A 4.0V 43ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXYH50N120C3D1 IC100 O-247 IF110 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC100 VCE sat tfi(typ) IXYH50N120C3D1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 50A 4.0V 43ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IC100 IXYH50N120C3D1 O-247 IF110 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXYH50N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC100 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 50A 4.0V 43ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXYH50N120C3D1 IC100 O-247 IF110 062in. PDF

    IXYH50N120C3D1

    Abstract: No abstract text available
    Text: Advance Technical Information IXYH50N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 50A 3.0V 57ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C


    Original     		IXYH50N120C3D1 IC110 O-247 IF110 062in. IXYH50N120C3D1 PDF

    IXYS CORPORATION

    Abstract: MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ
    Text: NEWS PCIM 2013 IXYS Efficiency through Technology ComPack Thyristor Module Platform A new Design that reduces Parts and Material Costs with Higher Power Density has a 33% reduced footprint and weight 67% less than current alternatives, significantly illustrating how IXYS’ MORE POWER, LESS


    Original     		DMA10P1600PZ /1600V) CMA50E1600TZ DSP45-16TZ O-263 D-68623 CH-2555 IXYS CORPORATION MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ PDF