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    IXTM50N20 Search Results

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    IXTM50N20 Price and Stock

    IXYS Corporation IXTM50N20

    MOSFET N-CH 200V 50A TO204AE
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    IXTM50N20 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXTM50N20 IXYS 200V HiPerFET power MOSFET Original PDF
    IXTM50N20 IXYS MegaMOS FET Scan PDF
    IXTM50N20 IXYS MegaMOS Power MOSFETs Scan PDF
    IXTM50N20 Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IXTM50N20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    42n20

    Abstract: 50n20 to-204ae ups 017 isolated nm 232
    Text: VDSS MegaMOSTMFET IXTH/IXTM42N20 IXTH/IXTM50N20 200 V 200 V ID25 RDS on 42 A 60 mΩ Ω Ω 50 A 45 mΩ N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF IXTH/IXTM42N20 IXTH/IXTM50N20 O-247 42N20 50N20 O-204 O-204 O-247 42n20 50n20 to-204ae ups 017 isolated nm 232

    SHD239608

    Abstract: shd239606
    Text: SENSITRON SEMICONDUCTOR 2000 CATALOG HERMETIC POWER MOSFETs N-CHANNEL, TO-254, TO-257 TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE V (BR)DSS Volts CONTINUOUS DRAIN CURRENT ID MAXIMUM POWER DISSIPATION PD STATIC DRAIN TO SOURCE ON RESISTANCE RDS(on) MAXIMUM


    Original     		PDF O-254, O-257) SHD226413 SHD226401 SHD226402 SHD226403 SHD226404 SHD226405 SHD226406 SHD226407 SHD239608 shd239606

    IXFM50N20

    Abstract: IRF9140 SHD239508 SHD239613 SHD2181 SHD2181A SHD2182 SHD2183 SHD2184 SHD218413
    Text: POWER MOSFETS HERMETIC POWER MOSFETs N-CHANNEL, SURFACE MOUNT TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE V BR DSS Volts SHD218413 30 SHD2181 60 SHD2182 100 SHD2183 200 SHD2184 400 SHD2185 500 SHD2186 800 SHD2187 900 SHD2188 1000 SHD218413A 30 SHD2181A 60


    Original     		PDF SHD218413 SHD2181 SHD2182 SHD2183 SHD2184 SHD2185 SHD2186 SHD2187 SHD2188 SHD218413A IXFM50N20 IRF9140 SHD239508 SHD239613 SHD2181 SHD2181A SHD2182 SHD2183 SHD2184 SHD218413

    buz350 mosfet

    Abstract: DVD120T efm1394m160 SOT23 34N 2N6960 DVD020S MTH30N20 20/SGSP577 EFM139 MTE60N20
    Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) Clsa Max (V) Max JF) tr Max (s) tf Max (s) Toper Max eC) Package Style N-Channel Enhancement-Type, (Cont'd) 5 10 IAFJ240 BUZ37 BUZ31 BUZ34


    Original     		PDF 2100p 1800p IAFJ240 BUZ37 BUZ31 BUZ34 IXTL15N20 MTH15N20 MTM15N20 buz350 mosfet DVD120T efm1394m160 SOT23 34N 2N6960 DVD020S MTH30N20 20/SGSP577 EFM139 MTE60N20

    50N15

    Abstract: TL 1074 CT megamos 46 08 09 6 megamos 48 ixth50n20 f g megamos 00D03 50N20 ID 48 Megamos a 1712 mosfet
    Text: IDE D I 4bfibE5b □ 0 0 D 3 b 5 0 | I X Y S CORP — ~ r 73 f ^ / s / ^ □ I X Y S IXTH50N20, 15 IXTM50N20, 15 MAXIMUM RATINGS Sym . IXTH50N15 IXTM 50N15 IXTH50N20 IXTM 50N 20 Drain-Source Voltage 1 Vd s s 150 200 Vdc Drain-Gate Voltage (R g s = 1-OMft) (1)


    OCR Scan     		PDF IXTH50N15 IXTH50N20 IXTM50N15 IXTM50N20 00D3b5 IXTH50N20, IXTM50N20, 50-200V, 50N15 TL 1074 CT megamos 46 08 09 6 megamos 48 f g megamos 00D03 50N20 ID 48 Megamos a 1712 mosfet

    50N20

    Abstract: 42N20 IXTH42N20
    Text: J □ IXYS MegaMOS FET IXTH/IXTM42N20 IXTH/IXTM50N20 p V DSS ^D25 200 V 200 V 42 A 50 A DS on 60 mQ 45 mQ N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions V DSS T j = 25 °C to 150°C 200 V VDGR T j = 25 °C to 150°C; Ras = 1 M£2 200


    OCR Scan     		PDF IXTH/IXTM42N20 IXTH/IXTM50N20 42N20 50N20 O-204 O-247 O-247 O-204 IXTH42N20

    Irfp250 irfp460

    Abstract: IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20
    Text: OD Discrete Power MOSFETs G U Standard N-channel types V DSS min. V p W o n t DS on) TO-247 C“ "^C = 25°C 25°C A a As TO-204 (M) 150 (K) (R) TO-268 SOT-227B (N) ^ -W 60 0.024 IXTH60N10 67 0.025 IXTH67N10 75 75 0.020 0.020 IXTH75N10 48 TO-220 TO-252 (Y)


    OCR Scan     		PDF O-204 O-264 ISOPLUS247 O-220 O-252 O-247 O-268 ISOPLUS220 O-263 OT-227B Irfp250 irfp460 IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20

    megamos

    Abstract: f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95
    Text: I X Y S CORP The MegaMOS family of large scale monolithic Power MOSFETs provides significantly higher power handling capability than industry standard MOSFETs. With HDMOS technology, IXYS has increased its chip sizes without a major cost penalty to the user. Unlike the popular size 3 ,4


    OCR Scan     		PDF O-204 O-247 megamos f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95

    d2s diode

    Abstract: IXTH50N20
    Text: aixYS MegaMOS FET IXTH/IXTM 50N20 VDSS lD25 = 200 V = 50 A ^D S on = ^ N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions VDSS T j =25°C to150°C 200 V V oor T J = 25° C to 150° C; RQS= 1 Mi2 200 V Vos vt g s m Continuous +20 V Transient


    OCR Scan     		PDF 50N20 to150 O-247 T0-204 T0-204 O-247 IXTM50N20 d2s diode IXTH50N20

    *2393n

    Abstract: D2199 IRF9140 2184b d2186 2188a d2188
    Text: SENSITRON SEMICONDUCTOR 1998 • SHORT FORM CATALOG - Revision HERMETIC POWER MOSFETs N -C H A N N E L . T O -2 5 4 . T O -2 5 7 TYPE NUM BER DRAIN TO SO URCE BREAKDO W N VOLTAGE CO NTINUO US DRAIN CURRENT M AXIM UM POWER DISSIPATION •d PD V (BR)DSS STATIC


    OCR Scan     		PDF SHD2261 SHD2262 SHD2263 SHD2264 SHD2265 SHD2266 SHD2268 IRFY044 *2393n D2199 IRF9140 2184b d2186 2188a d2188