IXFR180N07 Search Results

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IXYS Corporation IXFR180N07 MOSFET N-CH 70V 180A ISOPLUS247
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IXFR180N07 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFR180N07		IXYS	100V HiPerFET power MOSFET		Original	PDF
IXFR180N07		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 70V 180A ISOPLUS247		Original	PDF

IXFR180N07 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: IXFR180N07 HiperFETTM Power MOSFET VDSS ID25 D RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 70V 180A Ω 6mΩ 250ns G N-Channel Enhancement Mode Fast Intrinsic Rectifier S ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXFR180N07 250ns ISOPLUS247 E153432 100ms 180N07 9X-C53)	PDF
IXAN0009 Abstract: 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w Text: IXAN0009 HOW TO DRIVE MOSFETs AND IGBTs INTO THE 21ST CENTURY By Mr. Abhijit D. Pathak and Mr. Ralph E. Locher, IXYS Corporation Santa Clara, CA 95054 ABSTRACT As the industry pushes for higher power levels and higher switching frequencies, power supplies, which use MOSFETs/IGBTs for power	Original	IXAN0009 IXAN0009 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w	PDF
Untitled Abstract: No abstract text available Text: AdvancedTechnical Information IXFR 180N07 HiPerFET Power MOSFETs ISOPLUS247™ 70 V 180 A DSS I D25 P 6 m il DS on (Electrically Isolated Back Surface) < t 250 ns Single M O SFET Die «9 Maximum Ratings Symbol Test Conditions V Tj =25°Cto150°C Tj = 25° C to 150° C; RQS= 1 M£2	OCR Scan	ISOPLUS247TM 180N07 Cto150	PDF
ne 22 mosfet Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50 Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)	OCR Scan	ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50	PDF