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Vishay Siliconix IRLIZ24GPBF MOSFET N-CHANNEL 60V 14A TO220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRLIZ24GPBF	Tube			1,000	1 - 10 - 100 - 1000 $0.47793 10000 $0.47793	Buy Now
Vishay Intertechnologies IRLIZ24GPBF N-CHANNEL 60-V - Tape and Reel (Alt: IRLIZ24GPBF)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	IRLIZ24GPBF	Reel			1,000	1 - 10 - 100 - 1000 $0.43414 10000 $0.42528	Buy Now

IRLIZ24GPBF Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRLIZ24GPBF		Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 60V 14A TO220		Original	PDF

IRLIZ24GPBF Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IRLIZ24G Abstract: SiHLIZ24G-E3 SiHLIZ24G Text: IRLIZ24G, SiHLIZ24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V	Original	IRLIZ24G, SiHLIZ24G O-220 18-Jul-08 IRLIZ24G SiHLIZ24G-E3	PDF
SiHLIZ24G Abstract: No abstract text available Text: IRLIZ24G, SiHLIZ24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V	Original	IRLIZ24G, SiHLIZ24G O-220 12-Mar-07	PDF
IRLIZ24G Abstract: SiHLIZ24G-E3 SiHLIZ24G Text: IRLIZ24G, SiHLIZ24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V	Original	IRLIZ24G, SiHLIZ24G O-220 18-Jul-08 IRLIZ24G SiHLIZ24G-E3	PDF
SiHLIZ24G Abstract: No abstract text available Text: IRLIZ24G, SiHLIZ24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V	Original	IRLIZ24G, SiHLIZ24G O-220 11-Mar-11	PDF
SiHLIZ24G Abstract: No abstract text available Text: IRLIZ24G, SiHLIZ24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V	Original	IRLIZ24G, SiHLIZ24G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SiHLIZ24G Abstract: No abstract text available Text: IRLIZ24G, SiHLIZ24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V	Original	IRLIZ24G, SiHLIZ24G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF