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    IRG4BC30K Search Results

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    IRG4BC30K Price and Stock

    Rochester Electronics LLC IRG4BC30KPBF

    IGBT 600V 28A TO220AB
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    DigiKey IRG4BC30KPBF Bulk 8,644 256
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    Infineon Technologies AG IRG4BC30K

    IGBT 600V 28A 100W TO220AB
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    DigiKey IRG4BC30K Tube 50
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    Infineon Technologies AG IRG4BC30K-S

    IGBT 600V 28A 100W D2PAK
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    DigiKey IRG4BC30K-S Tube 250
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    Infineon Technologies AG IRG4BC30KPBF

    IGBT 600V 28A 100W TO220AB
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    Rochester Electronics IRG4BC30KPBF 8,644 1
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    Infineon Technologies AG IRG4BC30KDPBF

    IGBT 600V 28A 100W TO220AB
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    Rochester Electronics IRG4BC30KDPBF 100 1
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    Win Source Electronics IRG4BC30KDPBF 26,200
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    Find more IRG4BC30K price and stock on Findchips.com

    IRG4BC30K Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRG4BC30K International Rectifier Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRG4BC30K International Rectifier Insulated Gate Bipolar Transistor Original PDF
    IRG4BC30K International Rectifier 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package; A IRG4BC30K with Standard Packaging Original PDF
    IRG4BC30KD International Rectifier Short Circuit Rated UltraFast IGBT Original PDF
    IRG4BC30KD International Rectifier 600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package; A IRG4BC30KD with Standard Packaging Original PDF
    IRG4BC30KD International Rectifier Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode Original PDF
    IRG4BC30KDPbF International Rectifier TRANS IGBT CHIP N-CH 600V 28A 3TO-220AB Original PDF
    IRG4BC30KDPBF International Rectifier 600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package; Similar to IRG4BC30KD with Lead Free Packaging Original PDF
    IRG4BC30KDS International Rectifier IGBT Original PDF
    IRG4BC30KD-S International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRG4BC30KD-S International Rectifier INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Original PDF
    IRG4BC30KD-S International Rectifier 600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package; A IRG4BC30KD-S with Standard Packaging Original PDF
    IRG4BC30KD-SPBF International Rectifier 600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package; Similar to IRG4BC30KD-S with Lead Free Packaging Original PDF
    IRG4BC30KD-SPBF International Rectifier Original PDF
    IRG4BC30KD-STRL International Rectifier 600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package; A IRG4BC30KD-S with Tape and Reel Left Packaging Original PDF
    IRG4BC30KD-STRL International Rectifier Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode Original PDF
    IRG4BC30KDSTRLP International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 28A 100W D2PAK Original PDF
    IRG4BC30KDSTRLP-IR International Rectifier 600V, 28A, IGBT WITH ULTRAFAST S Original PDF
    IRG4BC30KD-STRR International Rectifier 600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package; A IRG4BC30KD-S with Tape and Reel Right Packaging Original PDF
    IRG4BC30KD-STRR International Rectifier Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode Original PDF

    IRG4BC30K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    motor IG 2200 19 X 000 15 R

    Abstract: AN-994 IRG4BC30KD-S IRGBC30KD2-S IRGBC30MD2-S
    Text: PD -91594C IRG4BC30KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF -91594C IRG4BC30KD-S motor IG 2200 19 X 000 15 R AN-994 IRG4BC30KD-S IRGBC30KD2-S IRGBC30MD2-S

    AN-994

    Abstract: IRGBC30K-S IRGBC30M-S
    Text: PD - 95785 IRG4BC30K-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF IRG4BC30K-SPbF AN-994. AN-994 IRGBC30K-S IRGBC30M-S

    IRGBC30K

    Abstract: IRGBC30M marking code TR
    Text: PD - 95641 IRG4BC30KPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF IRG4BC30KPbF O-220AB IRGBC30K IRGBC30M marking code TR

    IRGBC30MD2

    Abstract: IRGBC30KD2 IRG4BC30KDPbF
    Text: PD -94910 IRG4BC30KDPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF IRG4BC30KDPbF O-220AB. O-220AB IRGBC30MD2 IRGBC30KD2 IRG4BC30KDPbF

    AN-994

    Abstract: IRGBC30KD2-S IRGBC30MD2-S
    Text: PD -95674 IRG4BC30KD-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching


    Original     		PDF IRG4BC30KD-SPbF EIA-418. AN-994 IRGBC30KD2-S IRGBC30MD2-S

    AN-994

    Abstract: IRGBC30KD2-S IRGBC30MD2-S
    Text: PD -95674A IRG4BC30KD-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching


    Original     		PDF -95674A IRG4BC30KD-SPbF Minimized57) EIA-418. AN-994 IRGBC30KD2-S IRGBC30MD2-S

    AN-994

    Abstract: IRG4BC30KD-S IRGBC30KD2-S IRGBC30MD2-S LT 236 diode
    Text: PD -91594B PRELIMINARY IRG4BC30KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V


    Original     		PDF -91594B IRG4BC30KD-S AN-994 IRG4BC30KD-S IRGBC30KD2-S IRGBC30MD2-S LT 236 diode

    motor IG 2200 19 x 000 15 r

    Abstract: AN-994 IRG4BC30KD-S IRGBC30KD2-S IRGBC30MD2-S
    Text: PD -91594C IRG4BC30KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF -91594C IRG4BC30KD-S recover2-7105 motor IG 2200 19 x 000 15 r AN-994 IRG4BC30KD-S IRGBC30KD2-S IRGBC30MD2-S

    irf 44 n

    Abstract: IRGBC30KD2 IRGBC30MD2
    Text: PD -94910A IRG4BC30KDPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF -94910A IRG4BC30KDPbF O-220AB irf 44 n IRGBC30KD2 IRGBC30MD2

    AN-994

    Abstract: IRGBC30K-S IRGBC30M-S
    Text: PD - 95785A IRG4BC30K-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF 5785A IRG4BC30K-SPbF AN-994. AN-994 IRGBC30K-S IRGBC30M-S

    IRG4BC30KD

    Abstract: IRGBC30KD2 IRGBC30MD2
    Text: PD -91595A IRG4BC30KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF -91595A IRG4BC30KD IRG4BC30KD IRGBC30KD2 IRGBC30MD2

    AN-994

    Abstract: IRG4BC30K-S IRGBC30K-S IRGBC30M-S
    Text: PD - 91619B IRG4BC30K-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF 91619B IRG4BC30K-S AN-994 IRG4BC30K-S IRGBC30K-S IRGBC30M-S

    IRG4BC30K

    Abstract: IRGBC30K IRGBC30M
    Text: PD - 91596A IRG4BC30K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF 1596A IRG4BC30K T52-7105 IRG4BC30K IRGBC30K IRGBC30M

    Untitled

    Abstract: No abstract text available
    Text: PD - 95641A IRG4BC30KPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF 5641A IRG4BC30KPbF O-220AB

    IRG4BC30KD

    Abstract: IRGBC30KD2 IRGBC30MD2
    Text: PD -91595A IRG4BC30KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF -91595A IRG4BC30KD IRG4BC30KD IRGBC30KD2 IRGBC30MD2

    Untitled

    Abstract: No abstract text available
    Text: PD -94910A IRG4BC30KDPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , T J = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF -94910A IRG4BC30KDPbF O-220AB

    IRGBC30M

    Abstract: IRG4BC30K IRGBC30K
    Text: PD - 9.1596 IRG4BC30K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF IRG4BC30K IRGBC30M IRG4BC30K IRGBC30K

    6N6 datasheet

    Abstract: SE 110 AN-994 IRGBC30K-S IRGBC30M-S
    Text: PD - 95785 IRG4BC30K-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF IRG4BC30K-SPbF AN-994. 6N6 datasheet SE 110 AN-994 IRGBC30K-S IRGBC30M-S

    IRG4BC30K

    Abstract: IRGBC30K IRGBC30M
    Text: PD - 91596A IRG4BC30K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF 1596A IRG4BC30K IRG4BC30K IRGBC30K IRGBC30M

    AN-994

    Abstract: IRGBC30KD2-S IRGBC30MD2-S
    Text: PD -95674 IRG4BC30KD-SPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching


    Original     		PDF IRG4BC30KD-SPbF EIA-418. AN-994 IRGBC30KD2-S IRGBC30MD2-S

    Untitled

    Abstract: No abstract text available
    Text: PD -91595A IRG4BC30KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF -91595A IRG4BC30KD

    Untitled

    Abstract: No abstract text available
    Text: PD -91594C IRG4BC30KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF -91594C IRG4BC30KD-S

    Untitled

    Abstract: No abstract text available
    Text: PD - 95641 IRG4BC30KPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		PDF IRG4BC30KPbF O-220AB. O-220AB

    Untitled

    Abstract: No abstract text available
    Text: n International l R Rectifier p*himin/«y IRG4BC30KD-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10 ms, @360V V ce start , T j = 125°C,


    OCR Scan     		PDF IRG4BC30KD-S