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    IRFS640 Search Results

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    IRFS640 Price and Stock

    Rochester Electronics LLC IRFS640A

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFS640A Bulk 2,576 606
    • 1 -
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    • 100 -
    • 1000 $0.5
    • 10000 $0.5
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    Samsung Semiconductor IRFS640

    MOSFET Transistor, N-Channel, SOT-186
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFS640 3,587
    • 1 $1.5
    • 10 $1.5
    • 100 $1.5
    • 1000 $1.5
    • 10000 $0.525
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    Fairchild Semiconductor Corporation IRFS640A

    9.8A, 200V, 0.18ohm, N-Channel Power MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IRFS640A 2,576 1
    • 1 $0.4767
    • 10 $0.4767
    • 100 $0.4481
    • 1000 $0.4052
    • 10000 $0.4052
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    Component Electronics, Inc IRFS640A 15
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    IRFS640 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFS640 Fairchild Semiconductor 200V N-Channel MOSFET Original PDF
    IRFS640 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFS640 Unknown FET Data Book Scan PDF
    IRFS640A Fairchild Semiconductor Rugged Gate Oxide Technology Original PDF
    IRFS640A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    IRFS640A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFS640A Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRFS640A Samsung Electronics Improved gate charge Scan PDF
    IRFS640B Fairchild Semiconductor 200V N-Channel MOSFET Original PDF
    IRFS640B Fairchild Semiconductor 200V N-Channel MOSFET Original PDF
    IRFS640B_FP001 Fairchild Semiconductor 200V N-Channel B-FET / Substitute of IRFS640 & IRFS640A Original PDF

    IRFS640 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF640B

    Abstract: irfs640b IRF series
    Text: IRF640B/IRFS640B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRF640B/IRFS640B IRF640B irfs640b IRF series

    IRFS640B

    Abstract: No abstract text available
    Text: IRFS640B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original     		PDF IRFS640B IRFS640B

    IRFS640A

    Abstract: No abstract text available
    Text: IRFS640A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 0.18 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V


    Original     		PDF IRFS640A O-220F IRFS640A

    IRFS640A

    Abstract: IRFS640
    Text: IRF640B/IRFS640B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRF640B/IRFS640B O-220F IRFS640B FP001 IRFS640A IRFS640

    IRFS640A

    Abstract: No abstract text available
    Text: IRFS640A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 0.18 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ V DS = 200V


    Original     		PDF IRFS640A O-220F IRFS640A

    transistor NEC K2500

    Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
    Text: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales


    Original     		PDF

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    500W TRANSISTOR AUDIO AMPLIFIER

    Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
    Text: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,


    Original     		PDF Power247TM, 500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original     		PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    ld18a

    Abstract: IRFS640A OA 91 diode T0-220F
    Text: IRFS640A Advanced Power MOSFET FEATURES BVDSS • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 10|aA(Max.) @ V DS = 200V ■ Lower RDS(ON) : 0 .1 4 4 £ l(T y p .) 00 Rugged Gate Oxide Technology


    OCR Scan     		PDF IRFS640A ld18a IRFS640A OA 91 diode T0-220F

    IRFS640

    Abstract: irfs641
    Text: N-CHANNEL POWER MOSFETS IRFS640/641 FEATURES • L o w e r R d s io n • Improved inductive ruggedness • Fast sw itching tim es • Rugged polysilicon gate cell structure • Lower input ca p acita nce • Extended safe operating area • Improved high tem perature reliability


    OCR Scan     		PDF IRFS640/641 IRFS640 IRFS641 O-220 -160V

    IRFS641

    Abstract: IRFS640
    Text: N-CHANNEL POWER MOSFETS IRFS640/641 FEATURES TO-220F • Lower R d s io n •Improved inductive ruggedness • Past switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF IRFS640/641 IRFS640 IRFS641 O-220F

    IRFS640A

    Abstract: No abstract text available
    Text: IRFS640A Advanced Power MOSFET FEATURES BVDSS • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 10|aA(Max.) @ V DS = 200V ■ Lower RDS(ON) : 0 .1 4 4 £ l(T y p .) 00 Rugged Gate Oxide Technology


    OCR Scan     		PDF IRFS640A IRFS640A

    IRFS640A

    Abstract: IRFS640
    Text: IRFS640A Advanced Power M O SFET FEATURES D S S R u g g e d G a te O x id e T e c h n o lo g y • L o w e r In p u t C a p a c ita n c e ■ Im p ro v e d G a te C h a rg e ^ D S o n = ■ E x te n d e d S a fe O p e ra tin g A re a ■ L o w e r L e a k a g e C u rre n t : 1 0 |jA (M a x .) @


    OCR Scan     		PDF IRFS640A IRFS640A IRFS640

    IRFS640A

    Abstract: mosfet39 IRFS640
    Text: IRFS640A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA M ax @ VDS = 200V Lower R d^on) : 0.150 i i (Typ.)


    OCR Scan     		PDF IRFS640A IRFS640A mosfet39 IRFS640

    1RFS730

    Abstract: IRFS640 1rfs634 IRFS830 IRFS541 IRFS643 samsung IRFS632 IRFS634 1rfs63
    Text: - m % tt f ft * t Vd s or € i % £ Vg s Id Id s s Ig s s Pd Vgs th ft $a 4# Ü Ds on) Vd s = '14 * /CU (V) (A) min * /CH (W) (nA) Vg s (V) (HA) Vd s (V) Ciss g fs iD(on) C oss Crss (V) (V) ft B m m V g s =0 (max) max Id *typ (mA) (0) Vg s (V) Id (A) *typ


    OCR Scan     		PDF Ta-25CC) Ta-25Â IRFS532 O-220 IRFS533 1BFS540 IRFS541 1RFS542 1RFS730 IRFS640 1rfs634 IRFS830 IRFS643 samsung IRFS632 IRFS634 1rfs63

    SSS60N

    Abstract: sss6n60 SSS50N06 1RFS644 IRFS540 IRFS541 SSS7N60 irfs630 RFS830
    Text: MOSFETs FUNCTION GUIDE TO-220 FULL PACKAGE N-CHANNEL Part Number BV d ss V lo(on)(A) RDS(on)(Q) FWjc(KTW) PD(Watt) Page IRFSZ20 SSS15N05 IRFSZ30 IRFSZ40 SSS50N05 SSS60N05 50 13.00 14.00 20.00 28.00 30.00 36.00 0.100 0.084 0.050 0.028 0.024 0.018 4.16 4.00


    OCR Scan     		PDF O-220 IRFSZ20 SSS15N05 IRFSZ30 IRFSZ40 SSS50N05 SSS60N05 IRFSZ24 SSS15N06 IRFSZ34 SSS60N sss6n60 SSS50N06 1RFS644 IRFS540 IRFS541 SSS7N60 irfs630 RFS830

    irf1740

    Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
    Text: PRODUCT GUIDE D/I- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) (A) (0» cfes (pF) I D R DSM Q Po (nC) fC/W) (W) Page 8 0.150 280 17 7.04 18 Vol.1 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 IRFR034A 23 0.040


    OCR Scan     		PDF SSR3055A IRFR014A IRFR024A IRFR034A IRFR110A IRFR120A IRFR130A IRFR210A IRFR220A IRFR230A irf1740 IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640

    IRFS540

    Abstract: IRFS541 irfsz22 IRFS634 irfs630 IRFS522
    Text: FUNCTION GUIDE POWER MOSFETs TO-220 FULL PACKAGE N-CHANNEL BVdss V Part Number ID(onXA) RDS(onXß) 14.00 15.00 25.00 30.00 35.00 35.00 0.120 0.100 0.070 0.050 0.035 0.028 IRFSZ22 IRFSZ20 IRFSZ32 IRFSZ30 IRFSZ42 IRFSZ40 60.00 14.00 15.00 25.00 30.00 35.00


    OCR Scan     		PDF O-220 IRFSZ22 IRFSZ20 IRFSZ32 IRFSZ30 IRFSZ42 IRFSZ40 IRFSZ25 IRFSZ24 IRFSZ35 IRFS540 IRFS541 IRFS634 irfs630 IRFS522