IRFN9240
Abstract: JANTX2N7237U JANTXV2N7237U
Text: PD - 91554D POWER MOSFET SURFACE MOUNT SMD-1 IRFN9240 JANTX2N7237U JANTXV2N7237U REF:MIL-PRF-19500/595 200V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFN9240 RDS(on) I D 0.51Ω -11A HEXFET® MOSFET technology is the key to International
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91554D
IRFN9240
JANTX2N7237U
JANTXV2N7237U
MIL-PRF-19500/595
-150A/
-200V,
IRFN9240
JANTX2N7237U
JANTXV2N7237U
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International Rectifier 9240
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD-9.1554A International IQR Rectifier HEXFET POWER MOSFET IRFN9240 P-CHANNEL -200Volt, 0.51 a HEXFET Product Summary H E X F E T technology is the key to International Rectifier’s advanced line of power M OSFET transis tors. The efficient geometry achieves very low on-state
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IRFN9240
-200Volt,
International Rectifier 9240
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Untitled
Abstract: No abstract text available
Text: IDI ÉPPÉ llll SEME IRFN9240 LAB MECHANICAL DATA Dimensions in mm inches P-CHANNEL POWER MOSFET 11.5 V DSS 0.25 -2 0 0 V -8 A ^D(cont) 3.0 0.051 f t ^D S (on) FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF
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IRFN9240
O-220SM
300ms,
S1331fl7
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IRF9240
Abstract: IRF9240SMD IRFN9240SMD
Text: IRF9240 IRFN9240SMD MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) IRF9240 1.52 (0.06) 3.43 (0.135) D 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52)
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IRF9240
IRFN9240SMD
O-204AA)
O276AB
IRF9240
IRF9240SMD
IRFN9240SMD
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DON60
Abstract: No abstract text available
Text: im i t t i IMI IRFN9240 SEME LA B MECHANICAL DATA Dim ensions in mm inches P-CHANNEL POWER MOSFET 11.5 V DSS 2.0 3.5 I D(cont) -200V -8 A ^D S (on) 0.051 Q 0.25 3.5 3.0 iC FEATURES -*- • HERMETICALLY SEALED SURFACE MOUNT PACKAGE r r • SMALL FOOTPRINT - EFFICIENT USE OF
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IRFN9240
-200V
O-220SM
500mJ
300ms,
DON60
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Untitled
Abstract: No abstract text available
Text: PD - 91554E POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN9240 JANTX2N7237U JANTXV2N7237U JANS2N7237U REF:MIL-PRF-19500/595 200V, P-CHANNEL Part Number RDS(on) ID IRFN9240 0.51Ω -11A HEXFET MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International
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Original
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91554E
IRFN9240
JANTX2N7237U
JANTXV2N7237U
JANS2N7237U
MIL-PRF-19500/595
-200V,
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Untitled
Abstract: No abstract text available
Text: SEME IRFN9240 LAB MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 11.5 VDSS ID(cont) RDS(on) 0.25 3.5 3.5 1 3 3.0 –200V –8A Ω 0.051Ω FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 1.5 15.8 4.6 2.0 • SMALL FOOTPRINT – EFFICIENT USE OF
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IRFN9240
220SM
300ms,
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bad sec lar
Abstract: No abstract text available
Text: I p|-0 mationa I 9.1554 Provisional Data Sheet No. PD- M R Rectifier HEXFET POWER MOSFET IRFN9240 N -C H A N N E L -200 Volt, 0.51 Cl HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi
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smd 2f
Abstract: IRFN9240 smd diode 2F 7A BVDSS
Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1554 HEXFET POWER MOSFET IRFN9240 N-CHANNEL Ω HEXFET -200 Volt, 0.51Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.
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IRFN9240
smd 2f
IRFN9240
smd diode 2F 7A
BVDSS
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IRFN9240
Abstract: JANS2N7237U JANTX2N7237U JANTXV2N7237U
Text: PD - 91554E POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN9240 JANTX2N7237U JANTXV2N7237U JANS2N7237U REF:MIL-PRF-19500/595 200V, P-CHANNEL Part Number RDS(on) ID IRFN9240 0.51Ω -11A HEXFET MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International
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91554E
IRFN9240
JANTX2N7237U
JANTXV2N7237U
JANS2N7237U
MIL-PRF-19500/595
-150A/
-200V,
IRFN9240
JANS2N7237U
JANTX2N7237U
JANTXV2N7237U
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IRFN9240SMD
Abstract: No abstract text available
Text: IRFN9240SMD MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6
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IRFN9240SMD
00A/ms
300ms,
IRFN9240SMD
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smd 2f
Abstract: IRFN9240 Diode smd 2f ir mosfet smd package smd diode 44 smd diode 2F 7A
Text: Provisional Data Sheet No. PD-9.1554A HEXFET POWER MOSFET IRFN9240 P-CHANNEL Ω HEXFET -200 Volt, 0.51Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state
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IRFN9240
smd 2f
IRFN9240
Diode smd 2f
ir mosfet smd package
smd diode 44
smd diode 2F 7A
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IRF P CHANNEL MOSFET 10A 100V
Abstract: 2N7237U P 838 X MOSFET IRFN9240 JANTX2N7237U JANTXV2N7237U smd diode 2F 7A
Text: PD-91554C IRFN9240 JANTX2N7237U JANTXV2N7237U HEXFET POWER MOSFET [REF:MIL-PRF-19500/595] P - CHANNEL Ω MOSFET -200 Volt, 0.51Ω Product Summary Part Number IRFN9240 ® HEXFET power MOSFET technology is the key to International Rectifier’s advanced line of power
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PD-91554C
IRFN9240
JANTX2N7237U
JANTXV2N7237U
MIL-PRF-19500/595]
IRF P CHANNEL MOSFET 10A 100V
2N7237U
P 838 X MOSFET
IRFN9240
JANTX2N7237U
JANTXV2N7237U
smd diode 2F 7A
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diode smd 1D
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD-9.1554A International IQ R Rectifier HEXFET POWER MOSFET IRFN9240 P-CH A N N EL -200 Volt, 0.51 £2 HEXFET Product Summary H E X F E T te c h n o lo g y is th e key to In te rn a tio n a l Rectifier’s advanced line of power MOSFET transis
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IRF9240
Abstract: IRF9240SMD IRFN9240 IRFN9240SMD mosfet to3 TO3 package
Text: IRF9240 IRFN9240 IRF9240SMD MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) IRF9240 1.52 (0.06) 3.43 (0.135) D 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197)
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IRF9240
IRFN9240
IRF9240SMD
O-204AA)
IRFN9240SMD
O276AB
IRF9240
IRF9240SMD
IRFN9240
IRFN9240SMD
mosfet to3
TO3 package
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IRFN9240SMD
Abstract: No abstract text available
Text: PRODUCT: SEME LAB IRFN 9240SMD ISSUE: 3 PAGE 1 OF 3 TYPE: PACKAGES: P CHANNEL FET SMD1 DESIGNATION ORIGINATED DATASHEET ENTERED PROOFED ISSUED BY DATE DAVID DONEGANI 17/07/00 CAROL SILVEY 17/07/00 MAIN FILENAME PATH & FILENAME: C:\APPROVED\DTASHEET\SML_GEN\FETS\irfn9240smd.QXD
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9240SMD
GEN\FETS\irfn9240smd
IRFN9240SMD
300ms,
IRFN9240SMD
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Untitled
Abstract: No abstract text available
Text: IRFN9240 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)8.0 I(DM) Max. (A) Pulsed I(D)5.0 @Temp (øC)100# IDM Max (@25øC Amb)32 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75# Minimum Operating Temp (øC)-55
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IRFN9240
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IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,
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30am-5
44-0-1737-2com
DB8029C
IRF460
SMD TRANSISTOR MARKING k38
smd transistor k38
we 751002 s
SMD-6C
transistor smd k45
RAD-HARD igbt
IRF3504
afl2805s manufactured by international rectifier
550-065
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IRFM9034
Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number
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IRHE7110
IRHE7130
IRHE7230
IRHE8110
IRHE8130
IRHE8230
IRHE9130
IRHE9230
IRHG7110
IRHG6110
IRFM9034
irh7c50se
IRFM460
irhy
IRFE310
international rectifier p
JANSR2N7261
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IRF5402
Abstract: IRFN540 IRFN630 IRFN530 IRFN640 8YV32-5 W06C 2205-M IRFN733 IRFn342
Text: MilitaryAerospace Division M ilitary-Aerospace Division ceram ic surface m ount devices and scree ned to m e e t th e m ost severe T 0 2 2 0 c e r a m ic su rface m o u n t devices A surface m o u n t r e p l a c e m e n t for th e p op ular T 0 2 2 0 M e t a l and T 0 2 5 7 package, the T 0 2 2 0 S M
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BZX55C5V6CSM
T0220SM
2N2222CSM
2N2907CSM
BCW33CSM
BZX55C7V5CSM
2N2369ACSM
2N3209CSM
3250C
BCY59CSM
IRF5402
IRFN540
IRFN630
IRFN530
IRFN640
8YV32-5
W06C
2205-M
IRFN733
IRFn342
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Diode SMD ED 9C
Abstract: FN240 p-channel 250V 30A power mosfet P-CHANNEL 400V 15A i428
Text: IQR IRFN Series Devices IRFN Series Data Sheet alph abetical order. W h e re the inform ation is d evice specific, w e h ave assig n ed a n um eric c h a ra cte r for the graph type and an alph a c h a ra c te r to a given device. S e e T a b le A b elo w . W h e re graphs are
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I-445
Diode SMD ED 9C
FN240
p-channel 250V 30A power mosfet
P-CHANNEL 400V 15A
i428
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2N7334
Abstract: irfg9110 H24 SMD
Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHN7054
IRHN8054
IRHN7130
2N7334
irfg9110
H24 SMD
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10RIA10
Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy
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DO-203AA
HFA40HF120
HFA40HF60
O-254AA
HFA35HB120
HFA35HB120C
HFA35HB60
HFA35HB60C
O-258AA
HFA45HC120C
10RIA10
HFA40HF120
irfm9034
10RIA100
10RIA120
10RIA20
10RIA40
10RIA60
JANSR2N7261
70HF
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MO-D36AB
Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Text: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for
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MIL-S-19500
T0-254AA
T0-204AA/AE
MO-D36AB
IRF9510 SEC
IRF510 SEC
2n6845 jantx
D 10.7 A
IRF540 smd
irf740 STAND FOR
irfm9230
2N7237 JANTXV
BC 542
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