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    IRF7452QPBF Price and Stock

    International Rectifier IRF7452QPBF

    HEXFET POWER MOSFET Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
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    IRF7452QPBF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF7452QPBF International Rectifier HEXFET Power MOSFET Original PDF

    IRF7452QPBF Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: PD - 96113A IRF7452QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free Description These HEXFET® Power MOSFET's in SO-8


    Original     		PDF 6113A IRF7452QPbF EIA-481 EIA-541.

    EIA-541

    Abstract: F7101 IRF7101
    Text: PD - 96113A IRF7452QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free Description These HEXFET® Power MOSFET's in SO-8


    Original     		PDF 6113A IRF7452QPbF EIA-481 EIA-541. EIA-541 F7101 IRF7101

    Untitled

    Abstract: No abstract text available
    Text: PD - 96113 IRF7452QPbF SMPS MOSFET HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free Description


    Original     		PDF IRF7452QPbF EIA-541.