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    F8707G

    Abstract: f8707 IRF8707G
    Text: IRF7341GPbF • Advanced Process Technology • ÿDual N-Channel MOSFET • ÿUltra Low On-Resistance • ÿ175°C Operating Temperature • ÿ Repetitive Avalanche Allowed up to Tjmax • ÿLead-Free • ÿHalogen-Free VDSS 55V Description These HEXFET Power MOSFET’s in a Dual SO-8 package


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    IRF7341GPbF D-020D F8707G f8707 IRF8707G PDF