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    IRF644 Search Results

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    IRF644 Price and Stock

    Vishay Siliconix IRF644PBF

    MOSFET N-CH 250V 14A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF644PBF Tube 1,016 1
    • 1 $2.46
    • 10 $2.46
    • 100 $2.46
    • 1000 $0.79674
    • 10000 $0.69712
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    RS IRF644PBF Bulk 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.9
    • 10000 $2.75
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    Vishay Siliconix IRF644STRRPBF

    MOSFET N-CH 250V 14A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF644STRRPBF Cut Tape 605 1
    • 1 $4.7
    • 10 $3.113
    • 100 $4.7
    • 1000 $4.7
    • 10000 $4.7
    		Buy Now
    IRF644STRRPBF Digi-Reel 605 1
    • 1 $4.7
    • 10 $3.113
    • 100 $4.7
    • 1000 $4.7
    • 10000 $4.7
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    IRF644STRRPBF Reel 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.73839
    • 10000 $1.68625
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    Vishay Siliconix IRF644PBF-BE3

    MOSFET N-CH 250V 14A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF644PBF-BE3 Tube 457 1
    • 1 $2.46
    • 10 $2.46
    • 100 $2.46
    • 1000 $0.79674
    • 10000 $0.69712
    		Buy Now

    Vishay Siliconix IRF644SPBF

    MOSFET N-CH 250V 14A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF644SPBF Tube 338 1
    • 1 $4.55
    • 10 $4.55
    • 100 $4.55
    • 1000 $1.63552
    • 10000 $1.612
    		Buy Now
    RS IRF644SPBF Bulk 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.02
    • 10000 $1.92
    		Get Quote

    Rochester Electronics LLC IRF644

    14A, 250V, 0.28 OHM, N-CHANNEL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF644 Bulk 151
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2
    • 10000 $2
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    Find more IRF644 price and stock on Findchips.com

    IRF644 Datasheets (63)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF644 Fairchild Semiconductor 250V N-Channel MOSFET Original PDF
    IRF644 International Rectifier 250V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Original PDF
    IRF644 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF644 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 14A TO-220AB Original PDF
    IRF644 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF644 International Rectifier HEXFET Power MOSFET Scan PDF
    IRF644 International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRF644 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan PDF
    IRF644 International Rectifier Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A) Scan PDF
    IRF644 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 250V, 14A, Pkg Style TO-220AB Scan PDF
    IRF644 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF644 Unknown FET Data Book Scan PDF
    IRF644 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF644 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF644 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF644A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    IRF644A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF644A Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRF644B Fairchild Semiconductor 250V N-Channel MOSFET Original PDF
    IRF644B Fairchild Semiconductor 250V N-Channel MOSFET Original PDF

    IRF644 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) 68 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 35 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF644, SiHF644 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94871 IRF644PbF • Lead-Free 12/5/03 Document Number: 91039 www.vishay.com 1 IRF644PbF Document Number: 91039 www.vishay.com 2 IRF644PbF Document Number: 91039 www.vishay.com 3 IRF644PbF Document Number: 91039 www.vishay.com 4 IRF644PbF Document Number: 91039


    Original     		IRF644PbF O-220AB 12-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95116 IRF644SPbF • Lead-Free Document Number: 91040 3/16/04 www.vishay.com 1 IRF644SPbF Document Number: 91040 www.vishay.com 2 IRF644SPbF Document Number: 91040 www.vishay.com 3 IRF644SPbF Document Number: 91040 www.vishay.com 4 IRF644SPbF Document Number: 91040


    Original     		IRF644SPbF 08-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94107B IRF644N IRF644NS IRF644NL Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l Fifth Generation HEXFET Power MOSFETs from


    Original     		94107B IRF644N IRF644NS IRF644NL 08-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF644B/IRFS644B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		IRF644B/IRFS644B O-220 FP001 O-220F IRFS644B FP001 PDF

    Untitled

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRF644S FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.28Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 14 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V


    Original     		IRF644S PDF

    IRF644PBF

    Abstract: IRF644 SiHF644-E3 SiHF644 diode 330
    Text: IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 68 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 35 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF644, SiHF644 O-220 O-220 18-Jul-08 IRF644PBF IRF644 SiHF644-E3 diode 330 PDF

    IRF644B

    Abstract: IRFS644B IRF series mosfet irf 150
    Text: IRF644B/IRFS644B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		IRF644B/IRFS644B O-220 IRF644B IRFS644B IRF series mosfet irf 150 PDF

    IRF644N

    Abstract: IRF644NL IRF644NS SiHF644N SiHF644N-E3 SiHF644NS SiHF644NS-E3
    Text: IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS V 250 V RDS(on) (Ω) VGS = 10 V • Dynamic dV/dt Rating 0.240 RoHS* • 175 °C Operating Temperature


    Original     		IRF644N, IRF644NS, IRF644NL, SiHF644N SiHF644NS SiHF644NL O-262) O-220 O-263) 18-Jul-08 IRF644N IRF644NL IRF644NS SiHF644N-E3 SiHF644NS-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF644S, SiHF644S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.28 68 Qgs (nC) 11 Qgd (nC) 35 Configuration Single D DESCRIPTION D2PAK (TO-263) K G D S G • Halogen-free According to IEC 61249-2-21


    Original     		IRF644S, SiHF644S O-263) 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    644NS

    Abstract: IRF644NLPBF
    Text: PD - 95161 Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF644NPbF IRF644NSPbF IRF644NLPbF l HEXFET Power MOSFET


    Original     		O-220 O-220AB AN-994. IRF644N) IRF644NS/L) 644NS IRF644NLPBF PDF

    irf7309

    Abstract: IRF7507TR IRF7342 IRF7210 DO-30 IRLML2803TR IRF964
    Text: International Rectifier MOSFETs and Rectifiers MOSFETs Continued HEXFETª Power MOSFETs Ñ D2PAK (cont.) N-Channel (continued) Mfr.Õs Type IRF3710S IRF1310NS IRF540NS IRF530NS IRF3415S IRF3515S IRF3315S IRFS31N20D IRF640NS IRF630NS IRF644S IRF740S IRF710S


    Original     		OT-223 IRF3710S IRF7324 IRF1310NS IRF731450 1N4049 300U80A† 150L10A† DO-30 irf7309 IRF7507TR IRF7342 IRF7210 IRLML2803TR IRF964 PDF

    IRF644N

    Abstract: IRF644NL IRF644NS diode gp 634
    Text: PD - 94107B IRF644N IRF644NS IRF644NL Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l Fifth Generation HEXFET Power MOSFETs from


    Original     		94107B IRF644N IRF644NS IRF644NL O-220 12-Mar-07 IRF644N IRF644NL IRF644NS diode gp 634 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) 68 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 35 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF644, SiHF644 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 68 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 35 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF644, SiHF644 O-220 O-220 12-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF644S, SiHF644S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		IRF644S, SiHF644S 2002/95/EC O-263) 18-Jul-08 PDF

    IRF644N

    Abstract: IRF644NL IRF644NS diode gp 634 diode gp 421
    Text: PD - 94107B IRF644N IRF644NS IRF644NL Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l Fifth Generation HEXFET Power MOSFETs from


    Original     		94107B IRF644N IRF644NS IRF644NL O-220 O-220AB AN-994. IRF644N) IRF644NS/L) IRF644N IRF644NL IRF644NS diode gp 634 diode gp 421 PDF

    IRF644A

    Abstract: No abstract text available
    Text: IRF644A A dvanced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .2 8 Î2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 14 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V


    OCR Scan     		IRF644A IRF644A PDF

    irf644

    Abstract: Irfp244
    Text: IRF644/645 IRFP244/245 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		IRF644/645 IRFP244/245 IRF644/IRFP244 IRF645/IRFP245 irf644 Irfp244 PDF

    rf1s644s

    Abstract: No abstract text available
    Text: HARRIS S E M I C O N D U C T O R IRF644, IRF645, IRF646, IRF647, RF1S644, RF1S644SM 13A and 14A, 250V and 275V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 13A and 14A, 250V and 275V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		IRF644, IRF645, IRF646, IRF647, RF1S644, RF1S644SM TA17423E RF644, IRF645 rf1s644s PDF

    IRF644

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 5 G0172flfl ?4fl IRF644/645 IRFP244/245 SH6K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan     		G0172flfl IRF644/645 IRFP244/245 IRF644/IRFP244 IRF645/IRFP245 IRF644 IRFP244 IRF645 IRFP245 IRF644 PDF

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS IRF644 FEATURES • Lower R ds <on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		IRF644 Curren07 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-9.1006 In tern atio n al k ?r R e c tifie r IRF644S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description


    OCR Scan     		IRF644S SMD-220 SMD-220 D-6380 DD51453 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF644A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 MA Max @ Vos = 250V


    OCR Scan     		IRF644A PDF