IRF5800
Abstract: IRF5801 IRF5804 IRF5806 IRF5810 IRF5850 IRF5851 IRF5852 SI3443DV
Text: IRF5852PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage
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IRF5852PbF
IRF5803
IRF5802
IRF5800
IRF5801
IRF5804
IRF5806
IRF5810
IRF5850
IRF5851
IRF5852
SI3443DV
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IRF5852
Abstract: No abstract text available
Text: PD - 95261A IRF5852PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free VDSS RDS on max (W) ID 20 V 0.090@VGS = 4.5V 0.120@VGS = 2.5V 2.7A 2.2A
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5261A
IRF5852PbF
IRF5852
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IRF5800
Abstract: IRF5801 IRF5806 IRF5810 IRF5850 IRF5851 IRF5852 SI3443DV IRF5852PBF
Text: PD - 95261 IRF5852PbF l l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free HEXFET Power MOSFET VDSS RDS on max (W) ID 20 V 0.090@VGS = 4.5V 0.120@VGS = 2.5V 2.7A 2.2A Description These N-channel MOSFETs from International Rectifier
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Original
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PDF
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IRF5852PbF
IRF5800
IRF5801
IRF5806
IRF5810
IRF5850
IRF5851
IRF5852
SI3443DV
IRF5852PBF
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