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    ILB03N60 Price and Stock

    Infineon Technologies AG ILB03N60

    ILB03N60 - Insulated Gate Bipolar Transistor, 4.5A, 600V, N-Channel '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics ILB03N60 1,000 1
    • 1 $0.2625
    • 10 $0.2625
    • 100 $0.2468
    • 1000 $0.2231
    • 10000 $0.2231
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    ILB03N60 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    ILB03N60 Infineon Technologies IGBT Chip, N Channel, 600V, TO-263, 3-Pin Original PDF
    ILB03N60 Infineon Technologies 3A / 600V IGBT with monolithically integrated diode for resonant-halfbridge topologies in lighting ballast (40W-120W) Original PDF
    ILB03N60E3045A Infineon Technologies IGBTs & DuoPacks - 3A / 600V LightMOS in TO263 Original PDF

    ILB03N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Q67040-S4628

    Abstract: ic 5304 1a Q67040-S4626 ILA03N60 ILB03N60 ILD03N60 ILP03N60 IC 4043 configuration
    Text: ILA03N60, ILP03N60 ILB03N60, ILD03N60 ^ LightMOS Power Transistor C • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET


    Original     		PDF ILA03N60, ILP03N60 ILB03N60, ILD03N60 P-TO-220-3-1 O-220AB) ILA03N60 ILB03N60 Q67040-S4628 ic 5304 1a Q67040-S4626 ILA03N60 ILB03N60 ILD03N60 ILP03N60 IC 4043 configuration

    ILA03N60

    Abstract: ILB03N60 Q67040-S4627 SDP04S60 Infineon MOSFET 1000V
    Text: ILB03N60 ^ LightMOS Power Transistor C • • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET


    Original     		PDF ILB03N60 P-TO-263-3-2 O-263AB) Q67040-S4627 ILA03N60 ILB03N60 Q67040-S4627 SDP04S60 Infineon MOSFET 1000V

    Untitled

    Abstract: No abstract text available
    Text: ILP03N60, ILB03N60 ILD03N60 ^ LightMOS Power Transistor C • • • • New revolutionary high voltage technology designed for ZVSswitching in lamp ballasts IGBT with integrated reverse diode Avalanche rated 150°C operating temperature P-TO-220-3-1 TO-220AB


    Original     		PDF ILP03N60, ILB03N60 ILD03N60 P-TO-220-3-1 O-220AB) P-TO-263-3-2 O-263AB) P-TO-252-3-1 O-252AA) ILP03N60

    ILA03N60

    Abstract: ILB03N60 ILD03N60 ILP03N60 Q67040-S4626 Q67040-S4628
    Text: ILA03N60, ILP03N60 ILB03N60, ILD03N60 ^ LightMOS Power Transistor C • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET


    Original     		PDF ILA03N60, ILP03N60 ILB03N60, ILD03N60 P-TO-220-3-1 O-220AB) ILA03N60 ILB03N60 ILA03N60 ILB03N60 ILD03N60 ILP03N60 Q67040-S4626 Q67040-S4628