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    K102 P3

    Abstract: K102 la 5531 DIN 50014 STANDARD F119 K102P K102P2 K102P3 DIN 50014 PS4030
    Text: D TELEFUNKEN E LE CTRONI C • fl^üCHb GD077S1 3 IAL66 K 102 P TÏÏitLtiipyMKiNI electronic Creative Technologies -3 Construction: Emitter: Detector: Applications: Galvanically separated circuits, non-interacting switches


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    PDF flL-1000 rimb-25sC K102 P3 K102 la 5531 DIN 50014 STANDARD F119 K102P K102P2 K102P3 DIN 50014 PS4030

    0252C

    Abstract: DIN40040 RQK-10
    Text: TELEFUNKEN ELECTRONIC Û1C ]> fiRSOORb QOObSlô 5 IAL66 T 1270 N Typenrelhe/Type range T1270N Elektrische Eigenschaften Electrical properties Höchszulässige Werte 3600 repetitive peak forward off-state and reverse voltages RMS on-state current average on-state current


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    PDF T1270 T1270N lc-85 t-10ms j-120 t-10m8 17/flgure 14/figure 16/ffgure 18/flgure 0252C DIN40040 RQK-10

    BPW39

    Abstract: CQX18
    Text: 17E D TELEFUNKEN ELECTRONIC • ÖTEGO^b ODDflbME 3 CQX18 in iB J IF M K liM electronic _ T -H l-I I Cretbvi TfcchnoJogies GaAs Infrared Diode In plastic case Applications: IAL66 i: Radiation source in near infrared range Features: • Flat window


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    PDF IAL66 CQX18 000Ab45 BPW39 CQX18

    TFK 03 Diode

    Abstract: TLHR0400 tfk 605 R0400 tfk 635
    Text: TELEFUNKEN ELECTRONIC 17E D • Ô^EOCHb OOOöTMQ IAL66 Q TLH.0400 •¡mySRSMKIM electronic CrMtiv* Techno o9 4 S High Efficiency LEDs 0 10 mm in tinted diffused packages Technology Color Type High Efficiency Bed TLHR 040. GaAsP on GaP Yellow TLHY 040. GaAsP on GaP


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    PDF IAL66 000BT44 TFK 03 Diode TLHR0400 tfk 605 R0400 tfk 635

    transistor bc 237c

    Abstract: transistor 206 BC 205 TRANSISTOR NPN bc 206 transistor bu205 BU206 AS 205 transistor bf 204 115 TRANSISTOR BC 206
    Text: TELEFUNKEN ELECTRONIC 17E D • iH E O O 'lb GOGTMM? IAL66 T BU 204 • BU 205 • bU ¿u6 TnmiPttSMKOlN] electronic Creitiv* ”ftehnOtoaiM r-2 3 ~ 0 7 Silicon NPN Power Transistors Applications; Horizontal deflection circuits in black and white TV-receivers


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    PDF IAL66 15A3DIN transistor bc 237c transistor 206 BC 205 TRANSISTOR NPN bc 206 transistor bu205 BU206 AS 205 transistor bf 204 115 TRANSISTOR BC 206

    BPW75

    Abstract: IAL66 cm5 marking
    Text: TELEFUNKEN ELECTRONIC 17E D • 0000450 T IAL66 BPW75 IMUIPtiiniK electronic CrMtfv«TechnoioQt#* 1 Silicon Photo PIN Diode A p p lication s: High speed photo detector Features: • Fast response times i Angie of half sensitivity ± 9 *= 65° • Sm all junction capacitance


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    PDF IAL66 BPW75 IAL66 cm5 marking

    DIODE S3V 43

    Abstract: DIODE S3V 03 DIN 50014 DIN 50014 STANDARD electromedical S10ms CNR21 dioda DIODE S3V 50 DIODE S3V 08
    Text: H&D J> ITEL-EFUNKEN ELECTRONIC m ß^EOO^b PÜD7b7? IAL66 CNR 21 TTIUStFQflMKlIM electronic _ Creative Technologies Optically Coupled Triac Driver Construction: Emitter: GaAs Infrared Emitting Diode Detector: Silicon Planar Triac Bi-directional Double thyristor


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    PDF 0806/IEC 0750/T1 0860/IEC voltage933 DIODE S3V 43 DIODE S3V 03 DIN 50014 DIN 50014 STANDARD electromedical S10ms CNR21 dioda DIODE S3V 50 DIODE S3V 08

    DIODE S3V 94

    Abstract: DIODE S3V 43 DIODE S3V 75 IAL66 DIN 50014 S10ms DIN 50014 STANDARD S3V Diode 23
    Text: W ITEL-EFUNKEN ELECTRONIC ]> • IAL66 fi^EOO^b PGD7 b7 ? T - U h * 1 CNR 21 TTItUStFQflMKlIMelectronic CreativeTachnotogtes Optically Coupled Triac Driver Construction: Emitter: GaAs Infrared Emitting Diode Detector: Silicon Planar Triac Bi-directional Double thyristor


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    PDF D007b7? IAL66 0806/IEC 0750/T1 0860/IEC 0007bfll -200-mA DIODE S3V 94 DIODE S3V 43 DIODE S3V 75 DIN 50014 S10ms DIN 50014 STANDARD S3V Diode 23

    transistor BC 236

    Abstract: transistor bf 425 transistor bc 237c TRANSISTOR 636 bc638 transistor transistors BC 23 bc 640 transistor bc 238 b D-636 transistor
    Text: *T I 17E » TELEFUNKEN E L E C T R O N IC TTdlUKFCtfllMOSlKfi • IAL66 û'tëOCHb DODTB^l BC 636 • BC 638 • BC 640 electronic Creata« léchnofogtes Silicon PNP Epitaxial Planar Transistors Applications: For complementary AF driver stages .Features:


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    PDF IAL66 15A3DIN transistor BC 236 transistor bf 425 transistor bc 237c TRANSISTOR 636 bc638 transistor transistors BC 23 bc 640 transistor bc 238 b D-636 transistor

    TRANSISTOR BC 208

    Abstract: transistor Bu 208 BU208A TRANSISTOR BC 208 B
    Text: TELEFUNKEN ELECTRONIC 17E T> m fl'teQtHb 000^455 IAL66 BU 208 A •¡nyHPtUJMKIMelectronic CfMtiv*Tfcchnotogw T - 33 -0} Silicon IMPN Power Transistor Applications; Horizontal deflection circuits in colour TV-receivers Features: • High reverse.voltage • Power dissipation 12.5 W


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    PDF IAL66 15A3DIN TRANSISTOR BC 208 transistor Bu 208 BU208A TRANSISTOR BC 208 B

    S219P

    Abstract: ep 1387
    Text: TELEFUNKEN ELECTRONIC 17E 1> fl^SOQ^b OOOflSflE 0 IAL66 S 219 P TStUllFMI^IN electronic CrMtn* Technotog*s - Silicon Photo PIN Diode P-Type Applications: T-Ml'53 Wide band detector for demodulation of fast signals, e.g. of lasers and GaAs-LED's. -Detector for optical communication, e. g. for optical-fiber transmission systems and


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    PDF IAL66 S219P ep 1387

    BF681

    Abstract: telefun* transistor pnp bf 681 marking code transistor fb transistor 6B transistor bc 470 telefunken C80 v 681 Telefunken power electronic transistor TRANSISTOR BC 950 sot-23 Marking DL
    Text: TELEFUNKEN ELECTRONIC IMI electronic flic D • fl'iSDO'îb 000525Ô 0 BF 681 ~r - CreativeTechnologies Silicon PNP BF Transistor Applications: UHF/VHF oscillator and mixer stages Features: • High power gain • High reverse attenuation • Low noise figure


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    PDF T15/S54. ft-11 569-GS 000s154 hal66 if-11 BF681 telefun* transistor pnp bf 681 marking code transistor fb transistor 6B transistor bc 470 telefunken C80 v 681 Telefunken power electronic transistor TRANSISTOR BC 950 sot-23 Marking DL

    Ko 368

    Abstract: DIN40040 T388N TELEFUNKEN EL 156
    Text: TELEFUNKEN ELECTRONIC Û1C D • Ô^SOG'îb 00 Dbl 72 4 ■ AL 66 T Z 'Z S “- / ? T388N ' Typenreihe/Type ränge T388N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte U drm, UflRM Periodische Vorwärts-und Rückwärts-Spitzensperrspannung


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    PDF DDDbl75 OSOM70e0 Ko 368 DIN40040 T388N TELEFUNKEN EL 156

    TFK diode

    Abstract: diode tfk TRANSISTOR BC 277 diode s .* tfk tfk 045 TFK 220 transistor bf 244 76 TFK 244 tfk diode 12A3
    Text: 17E D I ÖSSODSb DOOMS'} 3 m k l G G ^ ¡r milFWKSM electronic TFK 3080 D TELEFUNKEN ELECTRONIC C » « tiv « lK h f 0l09* tt [ Preliminary specifications [ NPN Silicon Tripleton Power Transistor T -3 3 ~ 3 r- Applications: • Motor-control 380 V-mains)


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    PDF S1000 2/1997-0888E T0126 15A3DIN TFK diode diode tfk TRANSISTOR BC 277 diode s .* tfk tfk 045 TFK 220 transistor bf 244 76 TFK 244 tfk diode 12A3

    TCST2001

    Abstract: telefunken tcst TCST1001 FLL100 EM 4001 TCST3001 TCST 2001
    Text: TELEFUNKEN EL EC TR O N I C W fi^SüO^b Q007&3R b m k L G G J> TCST 1000 up to TCST 4001 tniQJltRLDKlCSiCÌI electronic _• ~7^ y / - 7 3 Creative Technologies Optoelectronic Interrupter without Aperture Construction: Emitter: GaAs-IR Emitting Diode


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    PDF 0GQ7fl44 TCST2001 telefunken tcst TCST1001 FLL100 EM 4001 TCST3001 TCST 2001

    transistor BU 426 A

    Abstract: BU426 transistor bc 237c transistor the 6 MHz transistor BF 375
    Text: 17E $ • sssDoib oooma & BU 426 - BU 426 A I TELEFUNKEN ELECTRONIC ■üHLÜtFMKIK] electronic CreativeTetfinok>Q*i T - 33-/3 Silicon NPN Power Transistors Applications: Switching mode power supply features: • In triple diffussion technique • Short switching time


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    PDF IAL66 15A3DIN E--07 transistor BU 426 A BU426 transistor bc 237c transistor the 6 MHz transistor BF 375

    Transistor BC 227

    Abstract: Electronic car ignition circuit IRF 940 TRANSISTOR Transistor S 637 T s637t TRANSISTOR G13 npn transistors 400V low power to92 A27 637 Marking Code A27 DIODE irf 940
    Text: 1 TELEFUNKEN ELECTRONIC 1?E I> a^SOD^b ODGSbll fi • AL6C S 637 T electronic CrwtiWfochnotogtes Silicon NPN Darlington Power Transistor Applications: Electronic car ignition circuit, general purposes switching application for high voltages where as very low input power is required


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    PDF DIN41 15A3DIN Transistor BC 227 Electronic car ignition circuit IRF 940 TRANSISTOR Transistor S 637 T s637t TRANSISTOR G13 npn transistors 400V low power to92 A27 637 Marking Code A27 DIODE irf 940

    Photo d12

    Abstract: telefunken remote control TFMP2360
    Text: fe 1 TELEFUNKEN ELECTRONIC 17 E d m a ^ a o o ^ b ooofit>aa =i TFMP 2360 electronic Creative fein/io 's q -v* PRELIMINARY' SPECIFICATION PHOTO MODULE FOR PCM REMOTE C O N TR O L SYSTEMS PAGE 1 7 -41-67 CARRIER FREQUENCY : 36 kHz FEATURES: * PHOTO DETECTOR AND PRE AMPLIFIER IN ONE PACKAGE


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    PDF 00flb2ti D--14 n20lHb DDfib32 0D0fib33 IAL66 Photo d12 telefunken remote control TFMP2360

    CF-100

    Abstract: A08 transistor 50B4DIN41867 bss25 A08 marking F100T a08 transistor to-50 transistor bf 203
    Text: TELEFUNKEN ELECTRONIC aie d • a^socnb 0005340 Creative Technologies \ T - J f - N-Channel-GaAs-M ESFET-Tetrode Depletion M ode Gain controlled amplifiers and mixers up to 2 GHz In common source configuration; in wireless telephone, broadcast sets, cabel TV and equipments with


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    PDF 50B4DIN41867 569-GS CF-100 A08 transistor bss25 A08 marking F100T a08 transistor to-50 transistor bf 203

    BF963

    Abstract: transistor bf 963 ALG TRANSISTOR ALG Transistor MARKING 2SC104
    Text: TELEFUNKEN ELECTRONIC Û1C D • OOOSEMb 2 7^ -5 / BF 963 m f f l R M S I M electronic Creative Technologies N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications: Input- and Mixerstages especially for PM- and VHF TV-tuners up to 300 MHz


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    PDF IAL66 569-GS BF963 transistor bf 963 ALG TRANSISTOR ALG Transistor MARKING 2SC104

    Untitled

    Abstract: No abstract text available
    Text: TELEFUNKEN ELECTRONIC Û1C D • Ô^SOG'îb 00Dbl72 4 ■ AL66 T Z ' Z S “- / ? T388N ' Typenreihe/Type ränge T388N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte U drm, UflRM Periodische Vorwärts-und Rückwärts-Spitzensperrspannung


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    PDF 00Dbl72 T388N

    diode B14A

    Abstract: B14A diode TFK 03 Diode TFK3070D TFK 001 B14A 23 TFK 001 TFK u 269 TFK 03 TFK3070
    Text: TELEFUNKEN ELECTRONIC 17E D • O lSO O ^b P O Q Ib S l S TFK 3070 D TTIUilPiiSMKIIKI electronic Creato*1«chn0t0Q«s Preliminary specifications NPN Silicon Darlington Power Transistor , 7 * * 3 3 - 3 r Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)


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    PDF 00CHb51 000Rb52 T0126 15A3DIN diode B14A B14A diode TFK 03 Diode TFK3070D TFK 001 B14A 23 TFK 001 TFK u 269 TFK 03 TFK3070

    8012-TCZT

    Abstract: IP551 TCZT8013
    Text: TELEFUNKEN ELECTRONIC I ÛSeüG^b 0DQ7Ô7S T H A L 6G TCZT 8012 -TCZT 8013 iM electronic Creative Technologies Matchable Pairs - Emitter and Detector Emitter: Detector: Applications: ~ — r 'y / 7 / GaAs IR Emitting Diode Silicon NPN Epitaxial Planar Phototransistor


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    PDF gr012 8012-TCZT IP551 TCZT8013

    U2351B

    Abstract: U2351 2351B PWM IC 6-PIN DIP
    Text: 44E D • 01200% 0010b43 4 ■ ALS6 U 2351 B • U 2351B-FP 'W PW M SPEED CONTROL FOR PERMANENT EXCITED DC MOTORS Technology: Bipolar TELEFUNKEN ELECTRONIC Features: ' T 5 Z .-1 3 - 1 S • Pulse width control up to 30 kHz clock frequency • Push-pull output stage


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    PDF 0010b43 2351B-FP 0T20DSb 52-13-2S 2351B 2351B IAL66 U2351B U2351 PWM IC 6-PIN DIP