N110
Abstract: R040-001 15607
Text: SHEET 1 OF 1 15.24 [.600 in] 5.08 [.200 in] 5.08 [.200 in] n.90 [.035 in] 7.62 [.300 in] 5501WHTX R040001 2.54 [.100 in] P.C. MOUNTING N.O. N.C. 3 1 2 1 n1.10 [.043 in] 2.00 [.079 in] 8.00 [.315 in] 2.00 [.079 in] CIRCUIT: SPDT 14.50 [.571 in] 5500STDBODYX
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5501WHTX
R040001)
5500STDBODYX
R010000)
12VDC
500VDC
5501MWHTX
XR0244P
N110
R040-001
15607
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Untitled
Abstract: No abstract text available
Text: RF2337 GENERAL PURPOSE AMPLIFIER Typical Applications • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • Broadband Test Equipment • Driver Stage for Power Amplifiers Product Description The RF2337 is a general purpose, low-cost RF amplifier
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RF2337
RF2337
6000MHz.
01GHz
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SKY65376-11: 2500 to 2570 MHz High Linearity, Active Bias Low Noise Variable Gain Amplifier Applications Bypass Control • LTE, WCDMA, GSM wireless infrastructure Low noise, high linearity systems Macro base stations Small cells RF_OUT
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SKY65376-11:
S2793a
202458D
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Untitled
Abstract: No abstract text available
Text: RMPA0951AT 3V Cellular CDMA Power Amplifier Module General Description Features The RMPA0951AT is a dual mode, small-outline Power Amplifier Module PAM for Cellular CDMA personal communication system applications. The PA is internallymatched to 50Ω and DC blocked which minimizes the use
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RMPA0951AT
RMPA0951AT
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r500 smd
Abstract: AL203 PWR220F R500
Text: NT IA PL M CO • ■ *R oH S Features ■ ■ Applications TO220 housing Low inductance SMD and through hole versions High power rating ■ ■ ■ ■ Power supplies Motor drives Test and measurement Welding PWR220 F Series Power Resistor Material Specifications
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PWR220
AL203)
RS-481-A
PWR220F
r500 smd
AL203
R500
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F0007
Abstract: R0100 R0200 R1000 R1200 B0201
Text: NEW ! 2CDC 275 031 F0007 Primary switch mode power supplies CP-D range ABB The new CP-D range power supplies ! W E N T he new CP-D range of modular power Characteristics of the CP-D range supplies is ideally suited for installation in
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F0007
B0201
F0007
R0100
R0200
R1000
R1200
B0201
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RF1196
Abstract: DS1103
Text: RF1196 RF1196SDM with Integrated B1 Duplexer: QB GSM, TB UMTS SDM WITH INTEGRATED B1 DUPLEXER: QB GSM, TB UMTS Package: Module, 4.5mmx4.5mmx1.0 mm RF1196 GSM Rx1 GSM Rx2 Features GSM Rx3 Very Low IL and High Isolation: GSM LB Tx: 1.1dB
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RF1196SDM
RF1196
120dBm
28-pin
Module27409-9421
DS110330
RF1196
DS1103
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RF2334
Abstract: No abstract text available
Text: RF2334 4 GENERAL PURPOSE AMPLIFIER Typical Applications • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • Broadband Test Equipment • Driver Stage for Power Amplifiers GENERAL PURPOSE AMPLIFIERS
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RF2334
RF2334
4000MHz.
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Untitled
Abstract: No abstract text available
Text: RF2336 GENERAL PURPOSE AMPLIFIER Typical Applications • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • Broadband Test Equipment • Driver Stage for Power Amplifiers Product Description The RF2336 is a general purpose, low-cost RF amplifier
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RF2336
RF2336
3000MHz.
OT23-5
01GHz
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transistor marking code 1325
Abstract: R04003 ims pcb filtronic Solid State
Text: FPD1000AS Datasheet v2.4 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency
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FPD1000AS
FPD1000AS
J-STD-020C,
transistor marking code 1325
R04003
ims pcb
filtronic Solid State
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Untitled
Abstract: No abstract text available
Text: RF2333 GENERAL PURPOSE AMPLIFIER Typical Applications • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • Broadband Test Equipment • Driver Stage for Power Amplifiers Product Description The RF2333 is a general purpose, low-cost RF amplifier
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RF2333
RF2333
6000MHz.
OT23-5
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band 1 duplexer
Abstract: RF1196 1085MHz umts duplexer LTE duplexer
Text: RF1196 RF1196SDM with Integrated B1 Duplexer: QB GSM, TB UMTS SDM WITH INTEGRATED B1 DUPLEXER: QB GSM, TB UMTS Package: Module, 4.5mmx4.5mmx1.0 mm RF1196 GSM Rx1 GSM Rx2 Features GSM Rx3 Very Low IL and High Isolation: GSM LB Tx: 1.1dB
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RF1196SDM
RF1196
120dBm
Comp27409-9421
DS110107
band 1 duplexer
RF1196
1085MHz
umts duplexer
LTE duplexer
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Untitled
Abstract: No abstract text available
Text: RF2336 4 GENERAL PURPOSE AMPLIFIER Typical Applications • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • Broadband Test Equipment • Driver Stage for Power Amplifiers GENERAL PURPOSE AMPLIFIERS
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RF2336
RF2336
3000MHz.
ope00
01GHz
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ABB GB14048. 3
Abstract: No abstract text available
Text: Data sheet Insulation monitoring relays CM-IWN.4/5/6 For unearthed AC, DC and mixed AC/DC systems up to Un = 400 V AC and 600 V DC Characteristics –– For monitoring the insulation resistance of unearthed IT systems up to Un = 400 V AC and 600 V DC
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sky77506
Abstract: S2473
Text: DATA SHEET SKY65374-11: 1850 to 1915 MHz High Linearity, Active Bias Low-Noise Variable Gain Amplifier Applications Bypass Control • LTE, WCDMA, GSM wireless infrastructure Low noise, high linearity systems Macro base stations Small cells RF_OUT
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SKY65374-11:
S2793a
201966E
sky77506
S2473
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Untitled
Abstract: No abstract text available
Text: SHEET OF~T 17. 10 - r 3.60 R040045 RECOMMENDED P.C.B. LAYOUT RED L.E.B LED SPECIFATION Vf REVERSE VDLTAGE V r EMISSION WAVELENGTH A p AVE, FDRWARD CURRENT Ia f LUMINOUS INTENSITY Iv CIRCUIT: SPDT CONTACT CONFIGURATION TYP, UNITS mW 2.0 ^ 1 3 2.8^-'"' 2,2
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RO10002)
R040045)
50milli-OHMS
5511-M-2-L2
XR0209P
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Untitled
Abstract: No abstract text available
Text: SHEET OF~T - 17. 10- YELLOW L.E.D. R040020 RECOMMENDED P.C.B. LAYOUT YEL L.E.D SYMBDL J^ M IN , TYP, Pi 2.8^ "'' E.L Vf LED SPECIFA TIDN PDWER DISSIPATION FDRWARD VOLTAGE UNITS mW V REVERSE VOLTAGE Vr EMISSION WAVELENGTH A AVE, FORWARD CURRENT Iaf nA REVERSE CURRENT
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R040020)
5501-M-
XR0156A
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IV-22
Abstract: No abstract text available
Text: SHEET OF~T - 17. 10- R040025 RECOMMENDED P.C.B. LAYOUT RED L.E.D SYMBDL J ^ M IN , TYP, Pi 2 .8 ^ -'" ' 2,2 Vf LED SPECIFA TIDN PDWER DISSIPATION FDRWARD VOLTAGE REVERSE VOLTAGE Vr EMISSION WAVELENGTH Ap AVE, FORWARD CURRENT Iaf LUMINOUS INTENSITY Iv 695
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R040025)
50milli-OHMSWER
50milli-OHMS
5501-M-7-1
XR0217P
IV-22
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Untitled
Abstract: No abstract text available
Text: SHEET OF~T - 17. 10- R040022 RECOMMENDED P.C.B. LAYOUT RED L.E.D SYMBDL J ^ M IN , TYP, Pi 2 .8 ^ -'" ' 2,2 Vf LED SPECIFA TIDN PDWER DISSIPATION FDRWARD VOLTAGE REVERSE VOLTAGE Vr EMISSION WAVELENGTH Ap AVE, FORWARD CURRENT Iaf LUMINOUS INTENSITY Iv 695
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R040022)
50milli-OHMSPDWER
50milli-OHMS
5501-M-4-1
XR0170P
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Untitled
Abstract: No abstract text available
Text: SHEET OF~T -17.10- R040023 RECOMMENDED P.C.B. LAYOUT RED L.E.D SYMBDL J ^ M IN , TYP, Pi 2 .8 ^ -'" ' 2,2 Vf LED SPECIFA TIDN PDWER DISSIPATION FDRWARD VOLTAGE REVERSE VOLTAGE Vr EMISSION WAVELENGTH A p AVE, FORWARD CURRENT I af LUMINOUS INTENSITY Iv 695
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R040023)
XR0101P
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Untitled
Abstract: No abstract text available
Text: SHEET OF~T - 17. 10- R040015 RECOMMENDED P.C.B. LAYOUT RED L.E.D SYMBDL J ^ M IN , TYP, Pi 2 .8 ^ -'" ' 2,2 Vf LED SPECIFA TIDN PDWER DISSIPATION FDRWARD VOLTAGE REVERSE VOLTAGE Vr EMISSION WAVELENGTH A p AVE, FORWARD CURRENT I af LUMINOUS INTENSITY Iv 695
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R040015)
50milli-OHMS
5501-M-3-1
XR0214P
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5501M
Abstract: No abstract text available
Text: SHEET OF~T - 17. 10 - R040020 RECOMMENDED P.C.B. LAYOUT RED L.E.D SYMBDL J^ M IN , TYP, Pi 2.8^-'"' 2,2 Vf LED SPECIFA TIDN PDWER DISSIPATION FDRWARD VOLTAGE REVERSE VOLTAGE Vr EMISSION WAVELENGTH A p AVE, FORWARD CURRENT I af LUMINOUS INTENSITY Iv 695 UNITS
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R040020)
50milli-OHMS
5501-M
XR0107P
5501M
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ERW07-120
Abstract: No abstract text available
Text: S P E C I F I C A T I O N DEVICE NAME : SILICON DIODE TYPE NAME : E RWO 7 - 1 2 0 SPEC. No. DATE Fuji E l e c t r i c Co., Ltd. This Specification is subject to change without notice. DATE NAM E APPROVED Fuji Electric C o d i c i DRAWN I A. CHECKED 1/6 Y 0257-R-004a
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0257-R-004a
T0-220AC
20kHz
Duty50X
ERW07-120
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