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    HY57V56420HT Search Results

    HY57V56420HT Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY57V56420HT Hynix Semiconductor 4 Banks x 16M x 4-Bit Synchronous DRAM Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: HY57V56420H L T 4 Banks x 16M x 4Bit Synchronous DRAM DESCRIPTION The HY57V56420H is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56420H is organized as 4banks of 16,777,216x4.


    Original
    PDF HY57V56420H 456bit 216x4. 400mil 54pin

    Untitled

    Abstract: No abstract text available
    Text: HY57V56420H L T 4 Banks x 16M x 4Bit Synchronous DRAM DESCRIPTION The HY57V56420H is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56420H is organized as 4banks of 16,777,216x4.


    Original
    PDF HY57V56420H 456bit 216x4. 400mil 54pin

    Untitled

    Abstract: No abstract text available
    Text: HY57V56420H L T 4 Banks x 16M x 4Bit Synchronous DRAM DESCRIPTION The HY57V56420H is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56420H is organized as 4banks of 16,777,216x4.


    Original
    PDF HY57V56420H 456bit 216x4. 400mil 54pin

    Untitled

    Abstract: No abstract text available
    Text: HY57V56420H 4 Banks x 16M x 4Bit Synchronous DRAM Preliminary DESCRIPTION The Hyundai HY57V56420H is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56420H is organized as 4banks of 16,777,216x4.


    Original
    PDF HY57V56420H HY57V56420H 456bit 216x4. 400mil 54pin

    Untitled

    Abstract: No abstract text available
    Text: HY57V56420HT 64Mx4-bit, 8KRef., 4Banks, 3.3V DESCRIPTION T h e H Y 5 7 V 5 6 4 2 0 H is a 2 6 8 ,4 3 5 ,4 5 6 b it C M O S S y n c h ro n o u s D R A M , id e a lly s u ite d f o r th e m a in m e m o ry a p p lic a tio n s w h ic h re q u ire la rg e m e m o ry d e n s ity a n d h ig h b a n d w id th . H Y 5 7 V 5 6 4 2 0 H is o rg a n iz e d a s 4 b a n k s o f 1 6 ,7 7 7 ,2 1 6 x 4 .


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    PDF HY57V56420HT 64Mx4-bit, 400mil 54pin