Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    HUF76113SK8T Search Results

    HUF76113SK8T Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HUF76113SK8T Fairchild Semiconductor 6.5A, 30V, .0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Original PDF
    HUF76113SK8T Fairchild Semiconductor 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Original PDF

    HUF76113SK8T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN9321

    Abstract: AN9322 HUF76113SK8 HUF76113SK8T MS-012AA TB334 TB337
    Text: HUF76113SK8 Data Sheet January 2003 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		PDF HUF76113SK8 AN9321 AN9322 HUF76113SK8 HUF76113SK8T MS-012AA TB334 TB337

    AN9321

    Abstract: AN9322 HUF76113SK8 HUF76113SK8T MS-012AA TB334 TB337 TC-2121
    Text: HUF76113SK8 Data Sheet December 2001 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		PDF HUF76113SK8 AN9321 AN9322 HUF76113SK8 HUF76113SK8T MS-012AA TB334 TB337 TC-2121

    TC2206

    Abstract: TC-2112 202E1
    Text: HUF76113SK8 Data Sheet October 1999 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 6.5A, 30V • Ultra Low On-Resistance, rDS ON = 0.030Ω • Temperature Compensating PSPICE Model • Temperature Compensating SABER Model


    Original     		PDF HUF76113SK8 TC2206 TC-2112 202E1

    AN9321

    Abstract: AN9322 HUF76113SK8 HUF76113SK8T MS-012AA TB334 TB337 KP-37
    Text: HUF76113SK8 Data Sheet October 1999 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4448.2 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced


    Original     		PDF HUF76113SK8 AN9321 AN9322 HUF76113SK8 HUF76113SK8T MS-012AA TB334 TB337 KP-37

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    Untitled

    Abstract: No abstract text available
    Text: HUF76113SK8 interrii Data Sheet O ctober 1999 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    OCR Scan     		PDF HUF76113SK8

    Untitled

    Abstract: No abstract text available
    Text: HUF76113SK8 Semiconductor 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET June 1998 Description Features m • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    OCR Scan     		PDF HUF76113SK8 TB334, HUF76113SK8 MS-012AA

    Untitled

    Abstract: No abstract text available
    Text: HUF76113SK8 Semiconductor 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET June 1998 | Features Description w • Logic Level Gate Drive This N-Chan nel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    OCR Scan     		PDF HUF76113SK8 MS-012AA