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Hitachi Ltd HN62404P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	HN62404P		1,764		1	1 $12 10 $9 100 $7.2 1000 $6.9 10000 $6.9	Buy Now
Quest Components	HN62404P		1,411			1 $16 10 $16 100 $16 1000 $8.4 10000 $8.4	Buy Now

HN62404P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
HN62404P		Hitachi Semiconductor	262144-word x 16-Bit / 524288-word x 8-Bit CMOS Mask Programmable ROM		Scan	PDF

HN62404P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
HN62404P Abstract: 62404P Text: HN62404P 262144-word x 16-bit/524288-word x 8-bit CMOS Mask Programmable Read Only Memory The H N 62 40 4P is a 4-M bit C M O S mask-programmable R O M organized either as 262144 w ords by 16 bits or as 524288 w ords by 8 bits. Realizing low power consum ption, this m em ory is	OCR Scan	PDF	HN62404P 262144-word 16-bit/524288-word 62404P, 200ns 100mW DP-40) HN62404P---------------------------- D15/A-1 HN62404P 62404P
uPD23C4000 Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000 Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A	OCR Scan	PDF	64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
rca thyristor manual Abstract: HN623258 101490 Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j	OCR Scan	PDF
41C1000 Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258	OCR Scan	PDF	41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A
HN62404P Abstract: a15 dsc ha nw HN62424FP Text: HITACHI / LOGIC/ARRAYS/Î1EÎ1 HOE 3> 4411.503 0014b53 2 HN62404 Series-HN62424 Series T ~ H 6 -1 3 'I5 262144-Word X 16-Blt/524288-Wordx 8-Blt CMOS Mask Programmable ROM HN62404, HN62424Series Is a 4-Mbit CMOS mask-programable ROM organized either as 262144-word x 16-bit or as 524288-word	OCR Scan	PDF	HN62404 HN62424 QQ14bH3 262144-Word 16-BIt/524288-Word HN62404, HN62424Series 16-bit 524288-word HN62404P a15 dsc ha nw HN62424FP
HN62404FP Abstract: HN62404P HN62404 HN62424P 262144 x16 1A15 HN62424FP Hitachi Scans-001 Text: HN62404 Series HN62424 Series 262144-Word X 16-Bit/524288-Word x 8-Bit CMOS Mask Programmable ROM H N 62 4 0 4 , H N 6 2 4 2 4 Series is a 4-M bit C M O S mask-program able R O M organized either as 262144-w o rd x 16-bit or as 524288-w ord x 8-bit. It can be operated with a battery because of low power	OCR Scan	PDF	HN62404 HN62424 262144-Word X16-Bit/524288-Word HN62404, 16-bit 524288-word HN62404P HN62404FP HN62424P 262144 x16 1A15 HN62424FP Hitachi Scans-001
41C464 Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100 Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page	OCR Scan	PDF	41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
K93C46 Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256 Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257	OCR Scan	PDF	416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
TC55B8128 Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256 Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6	OCR Scan	PDF	TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
TC55B4257 Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v Text: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264	OCR Scan	PDF	KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 KM428C64 KM424C256 KM424C256A TC524256 TC55B4257 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
free transistor equivalent book 2sc Abstract: HA13108 HL7801G HL7801E free thyristor equivalent book 2sc 2SC1707 HIGH POWER HIGH FREQUENCY CVD DIAMOND CHIP RESISTORS footprint HD44237 semi catalog pic micro weighing scale code example Text: RELIABILITY 1. 1.1 R E L IA B IL IT Y R E L IA B IL IT Y C H A R A C T E R IS T IC S F O R S E M IC O N D U C T O R D E V IC E S Hitachi semiconductor devices are designed, manufactured and inspected so as to achieve a high level of reliability. Accordingly, system reliability can be improved by com	OCR Scan	PDF
HM6116L Abstract: HM51256P HN62404P HM65256AP HN27C301G HN613128P hn623257 HM6147 HN27256P HN613128FP Text: • PACKAGE INFORMATION • Dual-in-line Plastic Unit: mm {inch Scale 1/1 • D P -1 6 B • D P -1 8 19 2 Í0 756) 20 32m a , J L 2 54 - 0 .2 5 C 48 - O f <■ 0 !00 ' 0 0 10> ( o 0 19 ' 0 0 0 4 ) ■J-L 0 l5 ii '"To.OlO-.«» 2 54 * 0 25 □ Í8 • 0	OCR Scan	PDF	CG-20 CG-22A CG-24 CG-28 HM6267CG HM6287CG HM6787CG HM100490CG HM100422CG, HM100415CG HM6116L HM51256P HN62404P HM65256AP HN27C301G HN613128P hn623257 HM6147 HN27256P HN613128FP
101490 Abstract: P22n HM50464P-12 50464 ram Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY	OCR Scan	PDF	ADE-40 101490 P22n HM50464P-12 50464 ram
al 232 nec Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258	OCR Scan	PDF	KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 al 232 nec TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference