Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    HGTG20 Search Results

    SF Impression Pixel

    HGTG20 Price and Stock

    Rochester Electronics LLC HGTG20N60B3-FS

    IGBT, 40A, 600V, N-CHANNEL, TO-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HGTG20N60B3-FS Bulk 21,095 1
    • 1 $0.02
    • 10 $0.02
    • 100 $0.02
    • 1000 $0.02
    • 10000 $0.02
    		Buy Now

    onsemi HGTG20N60A4

    IGBT 600V 70A TO247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HGTG20N60A4 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Newark HGTG20N60A4 Bulk 90
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    onsemi HGTG20N60B3

    IGBT 600V 40A 165W TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HGTG20N60B3 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Avnet Americas HGTG20N60B3 Tube 0 Weeks, 2 Days 233
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.8165
    • 10000 $2.7305
    		Buy Now
    Rochester Electronics HGTG20N60B3 11,700 1
    • 1 $3.45
    • 10 $3.45
    • 100 $3.24
    • 1000 $2.93
    • 10000 $2.93
    		Buy Now
    Avnet Silica HGTG20N60B3 53 Weeks 30
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Flip Electronics HGTG20N60B3 2,700
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Flip Electronics HGTG20N60B3

    IGBT 600V 40A TO247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HGTG20N60B3 Tube 200
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.87
    • 10000 $2.87
    		Buy Now

    Rochester Electronics LLC HGTG20N60B3

    N-CHANNEL IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HGTG20N60B3 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Find more HGTG20 price and stock on Findchips.com

    HGTG20 Datasheets (54)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HGTG20N100D2 Harris Semiconductor 20A, 1000V N-Channel IGBT Original PDF
    HGTG20N100D2 Intersil 20A, 1000V N-Channel IGBT Original PDF
    HGTG20N100D2 Intersil Obsolete Product Datasheet Scan PDF
    HGTG20N120 Intersil 34A, 1200V N-Channel IGBT Original PDF
    HGTG20N120C3 Harris Semiconductor 600V / 1200V UFS Series IGBTs Original PDF
    HGTG20N120C3D Harris Semiconductor 600V / 1200V UFS Series IGBTs Original PDF
    HGTG20N120C3D Intersil 45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF
    HGTG20N120CN Fairchild Semiconductor 63A, 1200V, NPT N-Channel IGBT Original PDF
    HGTG20N120CN Fairchild Semiconductor 63A, 1200V, NPT Series N-Channel IGBT Original PDF
    HGTG20N120CN Intersil 63A, 1200V, NPT Series N-Channel IGBT Original PDF
    HGTG20N120CND Fairchild Semiconductor 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF
    HGTG20N120CND Fairchild Semiconductor 63A, 1200V, NPT N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF
    HGTG20N120CND Intersil 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF
    HGTG20N120E2 Harris Semiconductor 34A, 1200V N-Channel IGBT Original PDF
    HGTG20N120E2 Intersil 34A, 1200V N-Channel IGBT Original PDF
    HGTG20N50C1D Harris Semiconductor 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode Original PDF
    HGTG20N50C1D Intersil 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode Original PDF
    HGTG20N60A4 Fairchild Semiconductor 600 V, SMPS N-Channel IGBT Original PDF
    HGTG20N60A4 Fairchild Semiconductor 600V, SMPS Series N-Channel IGBTs Original PDF
    HGTG20N60A4 Fairchild Semiconductor IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 70A 290W TO247 Original PDF

    HGTG20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G20N120CN

    Abstract: HGTG20N120CN HGTG20N120CND LD26 G20N120
    Text: HGTG20N120CN Data Sheet January 2000 63A, 1200V, NPT Series N-Channel IGBT Features The HGTG20N120CN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device


    Original     		PDF HGTG20N120CN HGTG20N120CN 340ns 150oC G20N120CN HGTG20N120CND LD26 G20N120

    HG20N60B3

    Abstract: hG20N60 hg20n60b3 equivalent
    Text: HGTG20N60B3 Data Sheet October 2004 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state


    Original     		PDF HGTG20N60B3 HGTG20N60B3 150oC. HG20N60B3 hG20N60 hg20n60b3 equivalent

    P channel 600v 20a IGBT

    Abstract: hg*20n60 600v HGTG30N60C3D 1200v 20a IGBT 1200v 30A to247 LC96585 UFS Series P-Channel HGTD3N60B3 HGTD3N60C3
    Text: HGTG20N60C3R HGTG20N60C3DR 2.3V TBD µJ HGTG30N60C3R HGTG30N60C3DR 2.3V TBD µJ HGTG20N60B3 HGTG20N60B3D 2.0V 1050µJ HGTG30N60B3 HGTG30N60B3D 2.2V 1700µJ HGTG40N60B3 2.0V 2500µJ HGTG20N60C3 HGTG20N60C3D 1.8V 1500µJ HGTG30N60C3 HGTG30N60C3D 1.8V 2500µJ


    Original     		PDF HGTD3N60C3 HGTD7N60C3 HGTD3N60C3R HGTD7N60C3R 200ns HGTD3N60B3 HGTD7N60B3 HGTG20N60C3R HGTG20N60C3DR HGTG30N60C3R P channel 600v 20a IGBT hg*20n60 600v HGTG30N60C3D 1200v 20a IGBT 1200v 30A to247 LC96585 UFS Series P-Channel HGTD3N60B3 HGTD3N60C3

    20n60c3DR

    Abstract: 20n60c3 HGTG20N60C3DR 20n60c* equivalent INTEPOWER HGTG LD26 RURP1560 20N60C3D
    Text: HGTG20N60C3DR S E M I C O N D U C T O R 40A, 600V, Rugged, UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode November 1996 Features Description • 40A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as


    Original     		PDF HGTG20N60C3DR 150oC 330ns 1-800-4-HARRIS 20n60c3DR 20n60c3 HGTG20N60C3DR 20n60c* equivalent INTEPOWER HGTG LD26 RURP1560 20N60C3D

    g20n60

    Abstract: HGT1S20N60C3S9A G20N60C3 HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 RHRP3060 TA49178 TB334 ic2545a
    Text: HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    Original     		PDF HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S 150oC. 108ns 150oC g20n60 HGT1S20N60C3S9A G20N60C3 HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 RHRP3060 TA49178 TB334 ic2545a

    HG20N60B3

    Abstract: Series 475 Rev-B3 hG20N60 hg20n60b3 equivalent 475 Rev-B3 HGTG20N60B3 LD26 RHRP3060 TB334 hg20n
    Text: HGTG20N60B3 Data Sheet October 2004 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state


    Original     		PDF HGTG20N60B3 HGTG20N60B3 150oC. TB334lopment. HG20N60B3 Series 475 Rev-B3 hG20N60 hg20n60b3 equivalent 475 Rev-B3 LD26 RHRP3060 TB334 hg20n

    G20N60B3D

    Abstract: G20N60B hg*20n60 Hgtg20n60
    Text: HGTG20N60B3D S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode November 1997 Features Description • 40A, 600V at TC = 25oC • Hyperfast Anti-Parallel Diode The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and


    Original     		PDF HGTG20N60B3D HGTG20N60B3D 150oC. RHRP3060. G20N60B3D G20N60B3D G20N60B hg*20n60 Hgtg20n60

    HGTP7N60B3D

    Abstract: 1200v diode to247 1200v 30A to247 TO220AB IGBT 1200v HGTD3N60C3R DIODE 3A 600V HGTD3N60B3 HGTD3N60C3 HGTD3N60C3RS HGTD7N60B3S
    Text: 2-3 HGTG20N60C3R HGTG20N60C3DR 2.3V 3000µJ HGTG27N60C3R HGTG27N60C3DR 2.3V 2000µJ HGTG20N60B3 HGTG20N60B3D 2.0V 1050µJ HGTG30N60B3 HGTG30N60B3D 2.2V 1700µJ HGTG40N60B3 2.0V 2500µJ HGTG20N60C3 HGTG20N60C3D 1.8V 1500µJ HGTG30N60C3 HGTG30N60C3D 1.8V 2500µJ


    Original     		PDF HGTD3N60C3 HGTD7N60C3 HGTD3N60C3R HGTD7N60C3R 200ns HGTD3N60B3 HGTD7N60B3 HGTG20N60C3R HGTG20N60C3DR HGTG27N60C3R HGTP7N60B3D 1200v diode to247 1200v 30A to247 TO220AB IGBT 1200v HGTD3N60C3R DIODE 3A 600V HGTD3N60B3 HGTD3N60C3 HGTD3N60C3RS HGTD7N60B3S

    HGTG20N120CND

    Abstract: 20N120CND LD26 20N120CN
    Text: HGTG20N120CND Data Sheet December 2001 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120CND is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best


    Original     		PDF HGTG20N120CND HGTG20N120CND 20N120CND LD26 20N120CN

    20n60c3

    Abstract: 20N60C3R HGT1S20N60C3RS HGTP20N60C3R HGT1S20N60C3RS9A HGTG20N60C3R RURP1560 HGT1S20N60C3R
    Text: HGTG20N60C3R, HGTP20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS S E M I C O N D U C T O R 40A, 600V, Rugged UFS Series N-Channel IGBTs January 1997 Features Description • 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as


    Original     		PDF HGTG20N60C3R, HGTP20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS 150oC 330ns 1-800-4-HARRIS 20n60c3 20N60C3R HGT1S20N60C3RS HGTP20N60C3R HGT1S20N60C3RS9A HGTG20N60C3R RURP1560 HGT1S20N60C3R

    HGTG20N60A4D

    Abstract: No abstract text available
    Text: HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    Original     		PDF HGTG20N60A4D HGTG20N60A4D 150oC. TA49339. TA49372.

    20N60A4

    Abstract: 20N60A4 equivalent IGBT 20n60a4 HGTG20N60A4 HGTP20N60A4 TA49372 20N60A mosfet 20a 300v HGTG20N60A4D LD26
    Text: HGTG20N60A4, HGTP20N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBTs Features The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		PDF HGTG20N60A4, HGTP20N60A4 HGTG20N60A4 HGTP20N60A4 150oC. 100kHz 200kHz 125oC 20N60A4 20N60A4 equivalent IGBT 20n60a4 TA49372 20N60A mosfet 20a 300v HGTG20N60A4D LD26

    HG20N60B3

    Abstract: hG20N60 HG20N60B hg20n60b3 equivalent TA49050 HGTG20N60B3 LD26 RHRP3060 TB334 hg20n
    Text: HGTG20N60B3 Data Sheet August 2003 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state


    Original     		PDF HGTG20N60B3 HGTG20N60B3 150oC. TB334 HG20N60B3 hG20N60 HG20N60B hg20n60b3 equivalent TA49050 LD26 RHRP3060 hg20n

    HG20N60B3

    Abstract: hG20N60 G20N60B3 hg20n60b3 equivalent HG20N60B
    Text: HGTP20N60B3, HGTG20N60B3 S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBTs November 1997 Features Description • 40A, 600V at TC = 25oC The HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a


    Original     		PDF HGTP20N60B3, HGTG20N60B3 HGTP20N60B3 HGTG20N60B3 150oC. TA49050. 1-800-4-HARRIS HG20N60B3 hG20N60 G20N60B3 hg20n60b3 equivalent HG20N60B

    G20N60B3

    Abstract: G20N60 HGTG20N60B3 G20N60B HGTP20N60B3 LD26 RHRP3060 hg*20n60
    Text: HGTP20N60B3, HGTG20N60B3 S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBT February 1996 Features • • • • • Package JEDEC TO-220AB COLLECTOR EMITTER 40A, 600V at TC = +25oC Square Switching SOA Capability Typical Fall Time - 140ns at +150oC


    Original     		PDF HGTP20N60B3, HGTG20N60B3 O-220AB 140ns 150oC O-247 HGTP20N60B3 HGTG20N60B3 1-800-4-HARRIS G20N60B3 G20N60 G20N60B LD26 RHRP3060 hg*20n60

    HG20N60B3

    Abstract: hG20N60 hg20n60b3 equivalent HG20N60B G20N60B3 hg*20n60 g20n60 vqe 24 d HGTG20N60B3 G20N60B
    Text: interrii HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 J a n u a ry . m Data Sheet 40A, 600V, UFS Series N-Channel IGBTs The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs


    OCR Scan     		PDF HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 HGTP20N60B3 HGTG20N60B3 HG20N60B3 hG20N60 hg20n60b3 equivalent HG20N60B G20N60B3 hg*20n60 g20n60 vqe 24 d G20N60B

    20N60C3R

    Abstract: No abstract text available
    Text: HARRIS HGTG20N60C3R, HGTP20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS S E M I C O N D U C T O R 40A, 600V, Rugged UFS Series N-Channel IGBTs January 1997 Features Description • 40A, 600V T j = 25°C This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as


    OCR Scan     		PDF HGTG20N60C3R, HGTP20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS 20N60C3R

    20N60C3DR

    Abstract: No abstract text available
    Text: X HGTG20N60C3DR M Aß , 40A, 600V, Rugged, UFS Series N-C hannel IGBT w ith A nti-Parallel U ltrafast Diode November 1996 Features Description • 40A, 600V at T c = 25°C This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as


    OCR Scan     		PDF HGTG20N60C3DR 330ns 20N60C3DR

    relay 12v 1c/o

    Abstract: 12V 1C/O relay G20N60C3 Transistor No C110 transistor C110 HGT1S20N60C3S9A G20N60 N-CHANNEL 45A TO-247 POWER MOSFET TA49178 HGTG20N60C3
    Text: HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S in t e r r ii J a n u a ry . m Data Sheet 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    OCR Scan     		PDF TA49178. HGTG20N60C3 O-247 G20N60C3 relay 12v 1c/o 12V 1C/O relay G20N60C3 Transistor No C110 transistor C110 HGT1S20N60C3S9A G20N60 N-CHANNEL 45A TO-247 POWER MOSFET TA49178

    G20N60B3D

    Abstract: TA49016 G20N60B3 transistor C110 C110 HGTG20N60B3D LD26 RHRP3060 hgtg20n
    Text: HGTG20N60B3D interrii J a n u a ry . m D ata S h eet 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60B3D is a MOS gated high voltage switching device com bining the best features of MOSFETs and bipolar transistors. The device has the high input


    OCR Scan     		PDF HGTG20N60B3D HGTG20N60B3D RHRP3060. TA49016. G20N60B3D TA49016 G20N60B3 transistor C110 C110 LD26 RHRP3060 hgtg20n

    PJ 969 diode

    Abstract: G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V
    Text: HGTG20N50C1D M o r r is 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A ,500V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time < 500ns • High Input Im pedance • Low Conduction Loss • With Anti-Parallel Diode


    OCR Scan     		PDF 500ns HGTG20N50C1D O-247 AN7254 AN7260) PJ 969 diode G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V

    20N120CND

    Abstract: No abstract text available
    Text: HGTG20N120CND Semiconductor D a ta s h e e t 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120CND is a Non-Punch Through IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best


    OCR Scan     		PDF HGTG20N120CND HGTG20N120CND TA49other 1-800-4-HARRIS 20N120CND

    Untitled

    Abstract: No abstract text available
    Text: HGTG20N120CND S e m iconductor Data Sheet 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120CND is a Non-Punch Through IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best


    OCR Scan     		PDF HGTG20N120CND HGTG20N120CND 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR bûE D • 43D2271 GÜSGS1S n i HHAS HGTG20N120E2 34A, 1200V N-Channel IGBT Decem ber 1993 Package Features JEDEC STYLE TO-247 TOP VIP N • 34 Amp, 1200 Volt • Latch Free Operation • Typical Fall Time - 780ns t COLLECTOR BOTTOM SIDE


    OCR Scan     		PDF 43D2271 HGTG20N120E2 O-247 780ns HGTG20N120E2