DS26C32C
Abstract: DS26C32 DS26C32CN DS26C32CJ DS26C32MJ DS26C32CM
Text: NATL SEMICON] {HEI10RY> IDE D | b S O l i a t D D b S S B l =1 | National Semiconductor PRELIMINARY T -75-45-05 General Description Features • ■ ■ ■ ■ ■ ■ ■ CO Low power CMOS design +0.2V sensitivity over the entire common mode range Typical propagation delays: 20 ns
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b5S31
T-75-45-05
DS26C32C
DS26C32
RS-422,
RS-423,
T-75-45-05
bSD112b
DS26C32CN
DS26C32CJ
DS26C32MJ
DS26C32CM
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ulw diode
Abstract: No abstract text available
Text: TEXAS INSTR -CASIC/MEUORYJ ?7 dË | 8961725 TEXAS INSTR <ASIC/MEMORY 0 ^ 1 7 5 5 00M0fl71 77C 40871 D TM4416KU8 16,384 BY 8-BIT DYNAMIC RAM MODULE ADVANCE INFORMATION SEPTEMBER 1985 - REVISED NOVEMBER 1985 U SINGLE-M-UNE PACKAGE TOP VIEW ) 16,384 X 8 Organization
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00M0fl71
TM4416KU8
30-Pin
ulw diode
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CTR34
Abstract: FGE2000 BL33B DFI01 Fairchild ZN 1010 L1332 JKI02 ctr-34 SHR04 OAI43
Text: NATL SEMICOND -CMEnORY> □2E D | ts D iia b □□bi3n ? I FGE Series ECL Gate Arrays FAIRCHILD A Schlumberger Company Description FGE Series Features The FGE Series of ECL gate arrays are the fastest silicon gate arrays commercially available. These advanced ECL gate ar
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F100K
225-picosecond
andRS003
TTRS103
Controller/16-out
CTR34
FGE2000
BL33B
DFI01
Fairchild ZN 1010
L1332
JKI02
ctr-34
SHR04
OAI43
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photoe
Abstract: No abstract text available
Text: TO S H I B A -CLOGIC/nEMORY} 9097248 TOSHIBA b? DE | ' ì D ,ì7a4fl 0 0 0 T S T 3 S LOGIC/MEMORY TCD205C CCD AREA IMAGE SENSOR CCD (Charge Coupled Device) 67C 09593. T-41-55 T C D 205C is a 488 x 376-element CCD area image sensor desi g n e d for B/ W TV cameras.
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TCD205C
T-41-55
376-element
88mmx6
8D24A-C)
photoe
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