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    Untitled

    Abstract: No abstract text available
    Text: 512Mb DDR SDRAM H5DU5182EFR-xxI H5DU5162EFR-xxI This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.1 / Feb. 2011


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    512Mb H5DU5182EFR-xxI H5DU5162EFR-xxI 1H5DU5182EFR-xxI DDR333 H5DU5182EFR H5DU5162EFR PDF

    H5DU5162EFR

    Abstract: DDR200 DDR266A DDR266B DDR333 DDR400 DDR500
    Text: 512Mb DDR SDRAM H5DU5182EFR-xxI H5DU5162EFR-xxI This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Nov. 2009


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    512Mb H5DU5182EFR-xxI H5DU5162EFR-xxI 1H5DU5182EFR-xxI H5DU5182EFR H5DU5162EFR 912-bit DDR200 DDR266A DDR266B DDR333 DDR400 DDR500 PDF

    H5DU5182EFR-XXC

    Abstract: H5DU5182EFR
    Text: 512Mb DDR SDRAM H5DU5182EFR H5DU5162EFR This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.1 / Feb. 2011


    Original
    512Mb H5DU5182EFR H5DU5162EFR 1H5DU5182EFR DDR333 H5DU5162EFR H5DU5182EFR-XXC PDF

    H5DU5182EFR

    Abstract: DDR200 DDR266A DDR333 DDR400 DDR500 H5DU5162EFR H5DU5162
    Text: 512Mb DDR SDRAM H5DU5182EFR H5DU5162EFR This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Nov. 2009


    Original
    512Mb H5DU5182EFR H5DU5162EFR 1H5DU5182EFR H5DU5182EFR H5DU5162EFR 912-bit DDR200 DDR266A DDR333 DDR400 DDR500 H5DU5162 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Rev.1.1 09.06.2010 256MB DDR – SDRAM SoDIMM 200PIN SoDIMM Features: SDN03264C1CE1HY-50R 256MB PC-3200 in FBGA Technique RoHS compliant Options: • Frequency / Latency DDR 400 MHz CL3 DDR 333 MHz CL2.5 • Module densities 256MB with 4 dies and 1 rank


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    256MB 200PIN SDN03264C1CE1HY-50R PC-3200 D-12681 PDF

    H5TQ2G63BFR-H9C

    Abstract: H5TQ1G83BFR-H9C H26M42001EFR H5RS1H23MFR h27u1g8f2b H27U1G8F2 H27UBG8T2A H27UBG8T H5MS2G22MFR-J3M H26M54001BKR
    Text: Rev 0.0 Q2’2010 Databook C omputing Memory DDR3 SDRAM : Component VDD DENSITY ORG. SPEED PART NUMBER PKG. FEATURE AVAIL. 1.5V 1Gb 256Mx4 DDR3 1333 H5TQ1G43BFR-H9C FBGA 78ball 8Bank, 1.5V, CL9,9-9-9 Now H5TQ1G43TFR-H9C FBGA(78ball) 8Bank, 1.5V, CL9,9-9-9


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    256Mx4 H5TQ1G43BFR-H9C 78ball) H5TQ1G43TFR-H9C H5TQ1G43BFR-G7C H5TQ1G43TFR-G7C H5TQ1G83BFR-H9C H5TQ2G63BFR-H9C H5TQ1G83BFR-H9C H26M42001EFR H5RS1H23MFR h27u1g8f2b H27U1G8F2 H27UBG8T2A H27UBG8T H5MS2G22MFR-J3M H26M54001BKR PDF

    H5DU5162

    Abstract: No abstract text available
    Text: Data Sheet Rev.1.1 09.06.2010 256MB DDR – SDRAM SoDIMM 200PIN SoDIMM Features: SDN03264C1CE1HY-50R 256MB PC-3200 in FBGA Technique RoHS compliant Options: • Frequency / Latency DDR 400 MHz CL3 DDR 333 MHz CL2.5 • Module densities 256MB with 4 dies and 1 rank


    Original
    256MB 200PIN SDN03264C1CE1HY-50R PC-3200 D-12681 H5DU5162 PDF

    H5DU5162

    Abstract: H5DU5182 H5DU518 H5DU5182EFR-XXC H5DU
    Text: 512Mb DDR SDRAM H5DU518 6 2EFR-xxC H5DU518(6)2EFR-xxI H5DU518(6)2EFR-xxL H5DU518(6)2EFR-xxJ This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


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    512Mb H5DU518 1H5DU5182EFR-xxx H5DU5162EFR-xxx DDR333 H5DU5162 H5DU5182 H5DU5182EFR-XXC H5DU PDF