GT30J124
Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.
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BCE0010E
BCE0010F
GT30J124
GT30F123
GT45F122
gt30g122
gt40j323
gt30g123
gt30f122
IGBT GT30J124
GT45f122 Series
gt45f123
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transistor d 4515
Abstract: Transistor 4515 2-21F1C GT20D101
Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D101 SILICON N CHANNEL TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage ¿3.3 ¿0.2 20.5MAX : Vc e s =250V MIN. . High Forward Transfer Admittance : | Yfe | =10S (TYP.) . Complementary to GT20D201
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GT20D101
GT20D201
2-21F1C
transistor d 4515
Transistor 4515
2-21F1C
GT20D101
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T20D201
Abstract: gt20d201
Text: TOSHIBA GT20D201 Insulated Gate Bipolar Transistor U nit in m m Silicon P Channel MOS Type High Power Amplifier Application Features • High Breakdown Voltage - VCES = -250V Min • High Forward Transfer Admittance - Yfs' = 10S (Typ.) • Complementary to GT20D101
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GT20D201
-250V
GT20D101
T20D201
T20D201
gt20d201
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GT20D101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR f ' W i • u n mmr r m n SILICON N CHANNEL TYPE w m ■ Unit in mm HIGH POWER AMPLIFIER APPLICATION 2 0.5 M AX • • • • 0 3 .3 ± O .2 High Breakdown Voltage : V c e £>= 250V Min. High Forward Transfer Admittance : |Y fe|= 10S(Typ.)
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GT20D101
GT20D201
F001EAA2'
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GT20D101
Abstract: No abstract text available
Text: SILICON N CHANNEL IGBT GT20D101 HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage 20 5 MAX : Vc£g=250V MIN. # 3.3 ±0.2 . High Forward Transfer Admittance : | Yfe | =10S (TYP.) . Complementary to GT20D201 . Enhancement-Mode *\ - 2.5
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GT20D101
GT20D201
100mA
GT20D101
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IGBT gt20d201
Abstract: No abstract text available
Text: SILICON N CHANNEL IGBT GT20D201 HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage VCES=-250V MIN. . High Forward Transfer Admittance I Yfe I =10S (TYP.) 20.5M A X ¿ 3 .3 ± 0 .2 . Complementary to GT20D101 . Enhancement-Mode 2.5 3.0 + 2.5
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GT20D201
GT20D101
-250V
-250V,
-100yA,
-100mA
IGBT gt20d201
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IGBT 200A 1200V
Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D
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bup203
t0220)
BUP212
BUP213
BUP313
BUP313D
BUP314
BUP314D
GT20D101-T0s
GT20D201-T0s
IGBT 200A 1200V
T0247
T0220AB
BUP313D
IGBT IRG4BC20KD
igbt 20A 1200v
IGBT 1200V 60A
T0247A
BUP314D
MG50Q2YS40
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GT20D101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL TYPE G T 2 0 D 1 01 Unit in mm HIGH PO W ER AM PLIFIER APPLICATION 03.3±O .2 2 0.5M A X • • • • High Breakdown Voltage : VCES~ 250V Min. High Forward Transfer Admittance : |Yfe | = 10S(Typ.)
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GT20D101
GT20D201
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toshiba gt20d101
Abstract: No abstract text available
Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SEMICONDUCTOR TOSHIBA TECHNICAL G T 2 0 D 1 01 DATA SILICON N CHANNEL TYPE GT20D101 Unit in mm HIGH POWER AMPLIFIER APPLICATION. 20.5MAX • • • • High Breakdown Voltage : VCES —250V (Min.) High Forward Transfer Admittance : |Yfe|= 10S(Typ.)
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GT20D101)
--250V
GT20D201
GT20D101
toshiba gt20d101
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IGBT gt20d201
Abstract: p channel igbt GT20D201
Text: GT20D201 TO SH IBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL IGBT GT20D201 HIGH POWER AMPLIFIER APPLICATION Unit in mm 20.5M AX. • High Breakdown Voltage • High Forward Transfer Admittance : |Yfe| = 10S Typ. • Complementary to GT20D101
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GT20D201
--250V
GT20D101
IGBT gt20d201
p channel igbt
GT20D201
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GT20D101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL TYPE G T 2 0 D 1 01 Unit in mm HIGH POWER AMPLIFIER APPLICATION 0d.S±O.2 2 0.5M A X • High Breakdown Voltage : V C E S ~ 250V Min. • High Forward Transfer Admittance : |Yfe| = 10S(Typ.)
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GT20D101
GT20D201
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G50Q2YS40
Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101
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GT10G101
GT10J301
GT10J311
GT10Q301
GT10Q
GT15G101
GT15J101
GT15J102
GT15J103
GT15Q101
G50Q2YS40
MG8Q6ES42
GT8Q102
mg300q1us41
GT60M301
MIG50J904H
gt15j103
MIG30J103H
MG25Q6ES50A
mg150q1js
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GT20D201
Abstract: toshiba gt20d201 GT20 GT20D101
Text: TOSHIBA GT20D201 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL TYPE GT20D201 HIGH PO W ER AM PLIFIER APPLICATION Unit in mm • High Breakdown Voltage • High Forward Transfer Admittance : |Yfe| = 10S Typ. • Complementary to GT20D101 •
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GT20D201
-250V
GT20D101
961001EAA2'
GT20D201
toshiba gt20d201
GT20
GT20D101
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GT200101
Abstract: GT20D101 GT20D201 toshiba gt20d101 TOS-M
Text: 45E D m TOSM T 0 T 7 5 5 G 0017äMfl T TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D101 SILICON N CHANNEL TYPE TOSH IB A D I S C R E T E / O P T O HIGH POWER AMPLIFIER APPLICATION Unit in mm 0 3 3 ± 0 .2 . High Breakdown Voltage v CES=25° v . High Forward Transfer Admittance
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1CH755G
GT20D101
GT20D201
T-39-31
GT200101
GT20D101
GT20D201
toshiba gt20d101
TOS-M
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GT20D201
Abstract: GT20D101 10S0V
Text: TOSHIBA GT20D101 insulated Gate Bipolar Transistor Unit in mm Silicon N Channel MOS Type High Power Amplifier Application Features • High Breakdown Voltage - v c e s = 2 5 0 V M in • High Forward Transfer Admittance - Yfs = 10S0VP-) • Complementary to GT20D201
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GT20D101
10S0VP-)
GT20D201
GT20D201
GT20D101
10S0V
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gt20d201
Abstract: No abstract text available
Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL TYPE P T ^ n n ^ fM GT20D201 HIGH POWER AMPLIFIER APPLICATION Unit in mm [Si : VcES=~250V MIN. . Complementary to GT20D101 ) oin esi < <1 1 2.5 3.0 + 2.5 1.0-0.25 MAXIMUM RATINGS (Ta=25°C) 5 .4 5 ± 0 .1 5
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GT20D201
GT20D101
gt20d201
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Toshiba gt20d101
Abstract: GT20D101 GT20D201
Text: GT20D101 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL TYPE G T 2 0 D 1 01 Unit in mm HIGH PO W ER AM PLIFIER APPLICATION 20.5MAX • • • • High Breakdown Voltage : VCES~ 250V Min. High Forward Transfer Admittance : |Yfe| = 10S(Typ.)
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GT20D101
GT20D201
961001EAA2'
Toshiba gt20d101
GT20D101
GT20D201
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toshiba gt20d101
Abstract: GT20D101 GT20D201
Text: TOSHIBA GT20D101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL TYPE G T 2 0 D 1 01 Unit in mm HIGH POWER AMPLIFIER APPLICATION 20.5MAX • • • • High Breakdown Voltage : VCES~ 250V Min. High Forward Transfer Admittance : |Yfe| = 10S(Typ.)
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GT20D101
GT20D201
toshiba gt20d101
GT20D101
GT20D201
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TOSH18A
Abstract: No abstract text available
Text: GT20D101 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL TYPE G T 2 0 D 1 01 HIGH POWER AM PLIFIER APPLICATION • • • • H igh Breakdown Voltage : V cE S —250V Min.; H igh Forward Transfer Adm ittance : |Yfe|= 10S(Typ. Complementary to GT20D201
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GT20D101
--250V
GT20D201
TOSH18A
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Untitled
Abstract: No abstract text available
Text: 45E D • TDT7E50 0017fl4fl I T OSM T TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D101 SILICON N C H A N N EL T Y P E TOSHIBA T DISCRETE/OPTO HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage 03 : V c e s =250V (MIN.) 3 ±0.2 . High Forward Transfer Admittance : | Yfe | =10S (TYP.)
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TDT7E50
0017fl4fl
GT20D101
GT20D201
DD17ASD
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GT20D201 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL TYPE GT20D201 Unit in mm HIGH PO W ER AM PLIFIER APPLICATION • • • • High Breakdown Voltage : VCES= —250V Min. High Forward Transfer Admittance : |Yfe| = 10S (Typ.) Complementary to GT20D101
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GT20D201
GT20D101
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Untitled
Abstract: No abstract text available
Text: TO SH IBA GT20D101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 2 0 D 1 01 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • • High Breakdown Voltage : VCES~ 250V Min. High Forward Transfer Admittance : |Yfe|= 10S(Typ.) Complementary to GT20D201
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GT20D101
GT20D201
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S5J53
Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction
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200-V
400J101H
MG75J1BS11
MG25J1B511
MG50J1BS11
MG100J1BS11
MG150J1BS11
MG25Q1BS11
MG50Q1BS11
MG75Q1BS11
S5J53
MIG30J103H
200J2
S5J25
mg7502ys
MG150J1JS50
MIG100Q201H
GT60M301
MIG30J103HB
MP6753
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Untitled
Abstract: No abstract text available
Text: 45E D • T0T72SG 0017ÔS1 T ■ T0S4 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D201 SILICON P CHANNEL TYPE TOSHIBA DISCRETE/OPTO HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage 0 3 .3 ± 0.2 20 5 MAX : VcES=-250V (MIN.) . High Forward Transfer Admittance : | Yfe I =10S (TYP.)
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T0T72SG
GT20D201
-250V
GT20D101
0017SSB
GT2QD201
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