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    GQM2195C2E5R6BB12 Price and Stock

    Murata Manufacturing Co Ltd GQM2195C2E5R6BB12D

    CAP CER 5.6PF 250V NP0 0805
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GQM2195C2E5R6BB12D Cut Tape 2,633 1
    • 1 $0.61
    • 10 $0.41
    • 100 $0.2692
    • 1000 $0.17878
    • 10000 $0.17878
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    GQM2195C2E5R6BB12D Reel 4,000
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    • 10000 $0.14723
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    GQM2195C2E5R6BB12D Digi-Reel 1
    • 1 $0.61
    • 10 $0.41
    • 100 $0.2692
    • 1000 $0.17878
    • 10000 $0.17878
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    Avnet Americas GQM2195C2E5R6BB12D Reel 10 Weeks 4,000
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    Mouser Electronics GQM2195C2E5R6BB12D 2,744
    • 1 $0.61
    • 10 $0.326
    • 100 $0.211
    • 1000 $0.176
    • 10000 $0.144
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    TTI GQM2195C2E5R6BB12D Reel 4,000
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    Avnet Abacus GQM2195C2E5R6BB12D Reel 11 Weeks 4,000
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    Avnet Asia GQM2195C2E5R6BB12D 8 Weeks 4,000
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    Murata Manufacturing Co Ltd GQM2195C2E5R6BB12J

    CAP CER 5.6PF 250V NP0 0805
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GQM2195C2E5R6BB12J Reel 10,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.14723
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    Avnet Americas GQM2195C2E5R6BB12J Reel 10 Weeks 10,000
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    • 10000 $0.17765
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    Mouser Electronics GQM2195C2E5R6BB12J
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    • 10000 $0.143
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    GQM2195C2E5R6BB12 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    GQM2195C2E5R6BB12D muRata Ceramic Capacitors, Capacitors, CAP CER 5.6PF 250V NP0 0805 Original PDF
    GQM2195C2E5R6BB12J muRata Ceramic Capacitors, Capacitors, CAP CER 5.6PF 250V NP0 0805 Original PDF

    GQM2195C2E5R6BB12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: RF HIGH FREQUENCY CHIP MONOLITHIC CERAMIC CAPACITOR GQM2195C2E5R6BB12_ 0805, C0G, 5.6pF, 250Vdc _: packaging code Reference Sheet 1.Scope This product specification is applied to RF High Frequency Chip Monolithic Ceramic Capacitor used for RF High frequency


    Original     		PDF GQM2195C2E5R6BB12_ 250Vdc) JEMCNC-0012L

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136


    Original     		PDF AFT09MS015N AFT09MS015NT1

    MXHP32HP

    Abstract: MXHP32HP1000 LQM18FN2R2M00 1uF 250V 10 X7R SMD electrolytic BNX024H01 LQM18FN100M00 GRM1555C1HR50BA01 NCP18XH103J03RB GRM1555C1H390JA0 PRF18BA471QS5RB
    Text: 2010 DESIGN ENGINEERING KITS CATALOG NO. G-06-G Please visit our website: www.murata.com DESIGN ENGINEERING KITS Murata offers a complete selection of Design Engineering Kits specifically intended to aid the design engineer in prototyping applications. Each kit


    Original     		PDF G-06-G MXHP32HP MXHP32HP1000 LQM18FN2R2M00 1uF 250V 10 X7R SMD electrolytic BNX024H01 LQM18FN100M00 GRM1555C1HR50BA01 NCP18XH103J03RB GRM1555C1H390JA0 PRF18BA471QS5RB

    Y5V50

    Abstract: GRM0225C1CR80BD05 GRM43ER61C226KE01 GRM0225C1CR20BD05 GRM033R60G224ME15 GRM31C5C1E104J GRM32ER71A476 GRM55FR60J107KA01 GRM0225C1C1R0CD05 GRM0225C1C1R1CD05
    Text: Murata Components Library for Cadence Allegro PCB PI option Part Number Type or Use GRM0225C1CR20BD05 GRM0225C1CR30BD05 GRM0225C1CR40BD05 GRM0225C1CR50BD05 GRM0225C1CR60BD05 GRM0225C1CR70BD05 GRM0225C1CR75BD05 GRM0225C1CR80BD05 GRM0225C1CR90BD05 GRM0225C1C1R0CD05


    Original     		PDF GRM0225C1CR20BD05 GRM0225C1CR30BD05 GRM0225C1CR40BD05 GRM0225C1CR50BD05 GRM0225C1CR60BD05 GRM0225C1CR70BD05 GRM0225C1CR75BD05 GRM0225C1CR80BD05 GRM0225C1CR90BD05 GRM0225C1C1R0CD05 Y5V50 GRM0225C1CR80BD05 GRM43ER61C226KE01 GRM0225C1CR20BD05 GRM033R60G224ME15 GRM31C5C1E104J GRM32ER71A476 GRM55FR60J107KA01 GRM0225C1C1R0CD05 GRM0225C1C1R1CD05

    A9M15

    Abstract: AFT09MS015N TRANSISTOR Z10 D55295 815 transistor
    Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 1, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136


    Original     		PDF AFT09MS015N AFT09MS015NT1 A9M15 AFT09MS015N TRANSISTOR Z10 D55295 815 transistor

    A5M06

    Abstract: Transistor Z17
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MS006N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS006NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this


    Original     		PDF AFT05MS006N AFT05MS006NT1 A5M06 Transistor Z17

    GRM188R71H224KAC4

    Abstract: GJM1555C1HR75BB01 GRM55FR60J107KA01 GCM31MR71H474K GQM1875C2E3R6BB12 GRM0225C1CR80BD05 GRM022R60J222KE19 GRM033R60G224ME15 grm1555c1h3r3cz01 GRM2165C1H681
    Text: Murata Components Library Capacitors 1/29 Part Number Type or Use GRM0225C1CR20BD05 GRM0225C1CR30BD05 GRM0225C1CR40BD05 GRM0225C1CR50BD05 GRM0225C1CR60BD05 GRM0225C1CR70BD05 GRM0225C1CR75BD05 GRM0225C1CR80BD05 GRM0225C1CR90BD05 GRM0225C1C1R0CD05 GRM0225C1C1R1CD05


    Original     		PDF GRM0225C1CR20BD05 GRM0225C1CR30BD05 GRM0225C1CR40BD05 GRM0225C1CR50BD05 GRM0225C1CR60BD05 GRM0225C1CR70BD05 GRM0225C1CR75BD05 GRM0225C1CR80BD05 GRM0225C1CR90BD05 GRM0225C1C1R0CD05 GRM188R71H224KAC4 GJM1555C1HR75BB01 GRM55FR60J107KA01 GCM31MR71H474K GQM1875C2E3R6BB12 GRM0225C1CR80BD05 GRM022R60J222KE19 GRM033R60G224ME15 grm1555c1h3r3cz01 GRM2165C1H681

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136


    Original     		PDF AFT09MS015N AFT09MS015NT1

    A5M0

    Abstract: IC 2 5/A5M06
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MS006N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS006NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this


    Original     		PDF AFT05MS006N AFT05MS006NT1 A5M0 IC 2 5/A5M06

    GQM22

    Abstract: GQM2195C2A2R7BB01D GQM1885C2AR70CB01 GQM1885C2A1R5CB01 GQM22M GQM1885C1H101JB01 GQM187 GQM1875C2E120GB12D GQM1875C2E100JB12 GQM1885C2A1R0BB01D
    Text: Application Specific Capacitors High Frequency Ceramic Capacitors – GQM Series GQM Product Summary GQM Series: Featuring improved low power consumption for mobile telecommunications, the GQM Series is typically used in frequencies from 500MHz to 10GHz. The copper electrodes allow for


    Original     		PDF 500MHz 10GHz. 500VDC. 100pF, 500VDC 1C2H3R0BB01L GQM22M5C2H3R3BB01L GQM22M5C2H3R6BB01L GQM22M5C2H3R9BB01L GQM22M5C2H4R3BB01L GQM22 GQM2195C2A2R7BB01D GQM1885C2AR70CB01 GQM1885C2A1R5CB01 GQM22M GQM1885C1H101JB01 GQM187 GQM1875C2E120GB12D GQM1875C2E100JB12 GQM1885C2A1R0BB01D

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136


    Original     		PDF AFT09MS015N AFT09MS015NT1