GP800DDS18 Search Results

GP800DDS18 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
GP800DDS18		Dynex	Dual Switch IGBT Module		Original	PDF

GP800DDS18 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
723 ic internal diagram Abstract: AN4502 AN4503 AN4505 GP800DDS18 Text: GP800DDS18 GP800DDS18 Dual Switch IGBT Module Replaces October 2000 version, DS5165-4.2 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate With Al2O3 Substrate ■ Low Inductance Internal Construction ■ Full 1800V Rating ■ 800A Per Arm	Original	GP800DDS18 DS5165-4 DS5165-5 723 ic internal diagram AN4502 AN4503 AN4505 GP800DDS18	PDF
bipolar transistor td tr ts tf Abstract: No abstract text available Text: GP800DDS18-AAB GP800DDS18-AAB Powerline N-Channel IGBT Module Advance Information DS5165-1.0 May 1999 The GP800DDS18-AAB is a dual switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the	Original	GP800DDS18-AAB DS5165-1 GP800DDS18-AAB bipolar transistor td tr ts tf	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

723 ic internal diagram

Abstract: AN4502 AN4503 AN4505 GP800DDS18
Text: GP800DDS18 GP800DDS18 Dual Switch IGBT Module Replaces October 2000 version, DS5165-4.2 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate With Al2O3 Substrate ■ Low Inductance Internal Construction ■ Full 1800V Rating ■ 800A Per Arm

Original

GP800DDS18 DS5165-4 DS5165-5 723 ic internal diagram AN4502 AN4503 AN4505 GP800DDS18

PDF

bipolar transistor td tr ts tf

Abstract: No abstract text available
Text: GP800DDS18-AAB GP800DDS18-AAB Powerline N-Channel IGBT Module Advance Information DS5165-1.0 May 1999 The GP800DDS18-AAB is a dual switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the