Untitled
Abstract: No abstract text available
Text: MÖE T> m SOLITRON DEVICES INC fl3bflb02 GGG37Ö1 3bb « S O D T-sg-iH 3 CvdOLITRON DEVICES PRODUCT SPECIFICATION cust. DWG -24 VOLT REGULATOR | 2% 1 sì _ I I C LASS 0 C to +70°C Ge ne r al Purpose REV . - D E V IC E M A R K IN G ST A N D A R D ial S
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fl3bflb02
GGG37Ã
CJSE062
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Untitled
Abstract: No abstract text available
Text: SOLITRON DEVICES INC MûE ]> • ABbflbDE GGG37bb DST WËSOD SolitrOfl Devices, Inc. S P E C I F I C A T I O N S NO.: 2N5659 T Y PE: npn SI L IC O N 120 Voltage, Collector to Base VCB0 Voltage, Collector to Emitter (V CE0) Voltage, Emitter to Base (V EB0)
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GGG37bb
2N5659
500mA
250mA
10MHz
500mA
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Untitled
Abstract: No abstract text available
Text: QUAD OPERATIONAL AMPLIFIER NJM2059 The NJM2059 integrated circuit is a quad high-gain operational am plifier internally com pensated and constructed on a single silicon chip using an advanced epitaxial process. The NJM2059 has wider unity gain band-width and larger slew rate com pared to the NJM2058.
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NJM2059
NJM2059
NJM2058.
NJM4559.
700mW
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80c51/31 MHS
Abstract: No abstract text available
Text: October 1992 IlM l 80C31/80C51 DATASHEET CMOS SINGLE-CHIP 8 BIT MICROCONTROLLER 80C31/80C51-L : 0 TO 6 MHz WITH 2.7 V < Vcc < 6 V 80C51F : 80C51 WITH PROTECTED ROM 80C31/80C51:0 TO 12 MHz 80C31/80C51-1: 0 T 0 16 MHz 80C31-S/80C51-S : 0 TO 20 MHz FEATURES •
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80C31/80C51
80C31/80C51-L
80C51F
80C51
80C31/80C51
80C31/80C51-1:
80C31-S/80C51-S
80C51)
80C31
80c51/31 MHS
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International Semiconductor
Abstract: No abstract text available
Text: INTERNATIONAL SEUICOND 4TE D • T0DD37Ö DD0 D1 0 2 34T ■ I S E M _ r-z3 -#^ International Semiconductor, Ine V HIGH CURRENT SILICON BRIDGE RECTIFIERS 10SB thru 35SB VOLTAGE RANGE 50 to 1000 Volt» CURRENT 10 to 35 Amperes _L FEATURES y .437 11.1 1.0 max
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T0DD37Ö
International Semiconductor
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DUP1
Abstract: No abstract text available
Text: FIJCRON TECHNOLOGY INC MICRON SSE T> • blllSMT DD037M3 DT4 ■ URN M T56C 2818 8 K x 18, DUAL 4 K x 18 C A CH E DATA SRAM ■ - ; CACHE DATA -0 4 - q q a i i
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DD037M3
8Kx18
66MHz
b00D37S2
DUP1
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2024-T351
Abstract: njsc nano QQ-A-250 circular CONNECTORS 37 pin layout MIL-W-16878 Type E
Text: NT Strip Connectors - .0 2 5 " Contact Spacing How to Order - NT NT P 2 40 S H J SERIES - - - - - - - - - - - - - INSULATOR MATERIAL CONTACT LOCATION CONTACT ARRANGEMENTS CONTACT T Y PE- - - - - - - - - - TERMINATION T Y P E -MODIFICATION C O D E-Nano Strip
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NJS-24
NJS-24P*
NJS-24S*
2024-T351
njsc nano
QQ-A-250
circular CONNECTORS 37 pin layout
MIL-W-16878 Type E
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Untitled
Abstract: No abstract text available
Text: SWITCHING OPERATIONAL AMPLIFIER NJM2120 T h e N JM 2 1 2 0 is a d u a l o p eratio n al am plifier o f 2 -IN P U T a n d 1 -O U T P U T w ith a n alo g switch. T h e N JM 2120 c an be used as a n alo g sw itch u n d e r th e co n d itio n o f G v = 0 dB, as S w itc h + A m p in o rd e r th a t each g a in A o r B c an b e adjusted
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NJM2120
00D37fl2
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s692
Abstract: S693 s684 S687 S694 S69-1 72125
Text: 14E D INTEGRATED DEVICE IntegratedDeviceTechnotogy Inc • MASS771 0D0373S 2 ■ 256x16,512x16, 1024 x 16 PARALLELTO-SERIAL CMOS FIFO DESCRIPTION: FEATURES: 25ns parallel port a c c e ss time 50MHz serial output port shift rate E a s ily expandable In depth and width
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MASS771
0D0373S
50MHz
256x16
512x16,
28-pin
300mil
28-pln
IDT72125
300mll)
s692
S693
s684
S687
S694
S69-1
72125
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3015 hj
Abstract: SK 1117
Text: 1 V A V 'C L J V DSS MegaMOS FET IXTH/IXTM10 N100 IXTH/IXTM12 N100 p ^D25 DS on 1000 V 10 A 1.20 a 1000 V 12 A 1.05 q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V *DSS Tj = 25 °C to 150°C 1000 V vDGR Tj = 25°C to 150°C; RGS = 1 M n
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IXTH/IXTM10
IXTH/IXTM12
10N100
12N100
O-247
O-204
12N100
IXTM12N100
100ps
3015 hj
SK 1117
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TT 2246
Abstract: No abstract text available
Text: l o g LF2246 11 x 10-bit Image Filter i c DEVICES INCORPORATED OPTION □ 66 MHz Data and Coefficient Input and Computation Rate □ Four 11 x 10-bit Multipliers with Individual Data and Coefficient Inputs and a 25-bit Accumulator □ User-Selectable Fractional or
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LF2246
10-bit
25-bit
TMC2246
120-pin
LF2246
LF2246QC33
LF2246QC25
TT 2246
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Untitled
Abstract: No abstract text available
Text: .100" 2.54 mm Header (Preferred Version in Europe and Asia) m 1100-7 Right Angle Locking Right angle locking headers with preinserted .025” square pins. Allows many design options, when low profile or locked interconnects are required. Mates with 1300 series
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11OX-7-1XX-01
E-48567
b052557
0DD36Db
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Untitled
Abstract: No abstract text available
Text: G M 71C16100A GoldStar 16,777,216 WORDSx 1BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description T he GM 71C16100A is the new generation d ynam ic RAM organized 1 6 ,7 7 7 ,2 1 6 x 1 Bit. G M 71C16100A has realized higher density, higher perform ance an d various functions by
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71C16100A
71C16100A
GM71C16100A
Q00377G
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mhs 80C32
Abstract: 80c52/32 MHS 5-43
Text: M ill DATA SHEET_ 80C32/80C52 CMOS SINGLE-CHIP _ 8 BIT MICROCONTROLLER_ . 80C32 : ROMLESS VERSION OF THE 80C52 80C32/80C52: 0 T 0 12 MHz 80C32/80C52-1 : 0 T 0 16 MHz 80C32-S/80C52-S : 0 TO 20 MHz 80CX32Æ0C52-L:0TO6MHzWmHZ7V<Vcc<5.5 V
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80C32/80C52
80C32
80C52
80C32/80C52:
80C32/80C52-1
80C32-S/80C52-S
80CX32Ã
0C52-L
80C52F
80C52
mhs 80C32
80c52/32 MHS 5-43
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Untitled
Abstract: No abstract text available
Text: 'Cap. The d<ode experte SANTA A N A CA SCOTTSDALE, AZ For more information call: 602 947-6300 Features 14KESD5.0 thru 14KESD170A AXIAL LEAD 1. Protects Sensitive Circu its From Short Duration Fast Rise Tim e Transients such as Electro-Static-D ischarge (ESD ) o r Electrical
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14KESD5
14KESD170A
GGG371Ã
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