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    Vishay Semiconductors VS-GB75DA120UP

    IGBT MODULE 1200V 658W SOT227
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    GB75D Datasheets Context Search

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    VS-GB75DA120UP

    Abstract: No abstract text available
    Text: Not recommended for new designs, use VS-GB90DA120U VS-GB75DA120UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy


    Original
    PDF VS-GB90DA120U VS-GB75DA120UP OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A VS-GB75DA120UP

    Untitled

    Abstract: No abstract text available
    Text: GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package


    Original
    PDF GB75DA120UP OT-227 E78996 2002/95/EC OT-22trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package


    Original
    PDF GB75DA120UP OT-227 E78996 2002/95/EC OT-22hay 11-Mar-11

    gb75da120up

    Abstract: transistor d 1680 ultrafast igbt
    Text: GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package


    Original
    PDF GB75DA120UP OT-227 E78996 2002/95/EC 18-Jul-08 gb75da120up transistor d 1680 ultrafast igbt

    Untitled

    Abstract: No abstract text available
    Text: GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package


    Original
    PDF GB75DA120UP OT-227 2002/95/EC OT-227 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package


    Original
    PDF GB75DA120UP OT-227 E78996 2002/95/EC OT-22hay 11-Mar-11

    GB75DA120UP

    Abstract: IGBT 75 D
    Text: GB75DA120UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package


    Original
    PDF GB75DA120UP OT-227 2002/95/EC 18-Jul-08 GB75DA120UP IGBT 75 D

    VS-GB75DA120UP

    Abstract: No abstract text available
    Text: Not Available for New Designs, Use VS-GB90DA120U VS-GB75DA120UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy


    Original
    PDF VS-GB90DA120U VS-GB75DA120UP OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A VS-GB75DA120UP

    L78B

    Abstract: L79B L74B yb78
    Text: Standard LED Lamps TYPE NO. M SB73D M RB73D M OB73D M OB73DR M GB73D M YB73D M SB74D M RB74D M OB74D MOB 74 DR M GB74D M YB74D M SB75D M RB75D M OB75D M OB75DR M GB75D M YB75D M SB76D M RB76D M OB76D M OB76DR M GB76D M YB76D M SB77D M RB77D M OB77D M OB77DR


    OCR Scan
    PDF SB73D RB73D OB73D OB73DR GB73D YB73D SB74D RB74D OB74D GB74D L78B L79B L74B yb78