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    Rochester Electronics LLC S6E2C59J0AGB1000A

    S6E2C59J0AGB1000A - 200 MHz ARM
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    DigiKey S6E2C59J0AGB1000A Bulk 168 19
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    Rochester Electronics LLC S6E2C4AJ0AGB10000

    RISC MICROCONTROLLER, CMOS
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    Roxspur Measurement and Control PDPGB-100

    SENSOR 10000KPA LCD DISPLAY
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    Jonard Tools VGB-100

    V-GROOVE CLEANING BRUSH
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    Infineon Technologies AG S6E2C39J0AGB1000A

    IC MCU 32BIT 1.5MB FLASH 192FBGA
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    DigiKey S6E2C39J0AGB1000A Tray 1,680
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    GB100 Datasheets (6)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    GB1000015 Diodes Crystals, Oscillators, Resonators - Crystals - CRYSTAL 10.0000MHZ 30PF TH Original PDF
    GB-1009 Lucky Light Multi-Color, Common Cathode 10mm Round Type LED Lamps (3 Pins) Original PDF
    GB-1009EGW Lucky Light Multi-Color, Common Cathode 10mm Round Type LED Lamps (3 Pins) Original PDF
    GB-1009HGW Lucky Light Multi-Color, Common Cathode 10mm Round Type LED Lamps (3 Pins) Original PDF
    GB-1009YGW Lucky Light Multi-Color, Common Cathode 10mm Round Type LED Lamps (3 Pins) Original PDF
    GB100XCP12-227 GeneSiC Semiconductor IGBTs - Modules, Discrete Semiconductor Products, IGBT 1200V 100A SOT-227 Original PDF

    GB100 Datasheets Context Search

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    PDF

    Untitled

    Abstract: No abstract text available
    Text: GB100TS60NPbF www.vishay.com Vishay Semiconductors INT-A-PAK “Half-Bridge” Ultrafast Speed IGBT , 108 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability


    Original     		GB100TS60NPbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    VS-GB100DA60UP

    Abstract: No abstract text available
    Text: VS-GB100DA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft


    Original     		VS-GB100DA60UP OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VS-GB100DA60UP PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-GB100TP120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V, 100 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient


    Original     		VS-GB100TP120N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-GB100LH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in1 Package, 1200 V and 100 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient


    Original     		VS-GB100LH120N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-GB100NH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 100 A FEATURES • 10 s short circuit capability • VCE on with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case


    Original     		VS-GB100NH120N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    IGBT 101

    Abstract: No abstract text available
    Text: VS-GB100TH120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V and 100 A FEATURES • NPT IGBT technology • 10 s short circuit capability • Low switching losses • Rugged with ultrafast performance • VCE on with positive temperature coefficient


    Original     		VS-GB100TH120U 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 IGBT 101 PDF

    GB100DA60UP

    Abstract: No abstract text available
    Text: GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft reverse recovery


    Original     		GB100DA60UP OT-227 E78996 2002/95/EC 11-Mar-11 GB100DA60UP PDF

    GB100DA60UP

    Abstract: No abstract text available
    Text: GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft reverse recovery


    Original     		GB100DA60UP OT-227 E78996 2002/95/EC 11-Mar-11 GB100DA60UP PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-GB100TP120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V, 100 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient


    Original     		VS-GB100TP120N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    VS-GB100TP120U

    Abstract: No abstract text available
    Text: VS-GB100TP120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V, 100 A FEATURES • 10 s short circuit capability • VCE on with positive temperature coefficient • Rugged with ultrafast performance • Square RBSOA


    Original     		VS-GB100TP120U 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VS-GB100TP120U PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-GB100LH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in1 Package, 1200 V and 100 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient


    Original     		VS-GB100LH120N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    GB2099-1

    Abstract: GB2099
    Text: Volex - Custom Cord Design Selected Cable: 2137H End View Plug Cord View Cord Connector End View C13 n/a CHINA RVV CLASS I 300/500 GB2099.1 3X1.0MM2 AND GB1002 Part Number 2137H Country China Category international power cords Jacket Color Black Length Feet


    Original     		2137H GB2099 GB1002) 00mm2 800-246-CORD. GB2099-1 PDF

    diode BY 127

    Abstract: No abstract text available
    Text: GB100TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 108 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability


    Original     		GB100TS60NPbF E78996 2002/95/EC 11-Mar-11 diode BY 127 PDF

    Untitled

    Abstract: No abstract text available
    Text: GB100TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 108 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized speed 8 to 60 kHz for hard RoHS switching COMPLIANT • Low VCE(on) • 10 µs short circuit capability


    Original     		GB100TS60NPbF 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-GB100NH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 100 A FEATURES • 10 s short circuit capability • VCE on with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case


    Original     		VS-GB100NH120N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-GB100TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 100 A FEATURES • Low VCE on SPT + IGBT technology • 10 s short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C


    Original     		VS-GB100TH120N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-GB100TS60NPbF www.vishay.com Vishay Semiconductors INT-A-PAK “Half-Bridge” Ultrafast Speed IGBT , 108 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability


    Original     		VS-GB100TS60NPbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    VS-GB100TP120U

    Abstract: No abstract text available
    Text: VS-GB100TP120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V, 100 A FEATURES • 10 s short circuit capability • VCE on with positive temperature coefficient • Rugged with ultrafast performance • Square RBSOA


    Original     		VS-GB100TP120U 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VS-GB100TP120U PDF

    GB100DA60UP

    Abstract: GB100D 930-01
    Text: GB100DA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel didoes with ultrasoft reverse recovery


    Original     		GB100DA60UP OT-227 2002/95/EC 18-Jul-08 GB100DA60UP GB100D 930-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-GB100LP120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 100 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient


    Original     		VS-GB100LP120N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-GB100NH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 100 A FEATURES • 10 s short circuit capability • VCE on with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case


    Original     		VS-GB100NH120N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-GB100TS60NPbF www.vishay.com Vishay Semiconductors INT-A-PAK “Half-Bridge” Ultrafast Speed IGBT , 108 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: optimized for hard switching speed • Low VCE(on) • 10 s short circuit capability


    Original     		VS-GB100TS60NPbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-GB100LH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 100 A FEATURES • 10 s short circuit capability • VCE on with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case


    Original     		VS-GB100LH120N 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-GB100LH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in1 Package, 1200 V and 100 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient


    Original     		VS-GB100LH120N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF