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    FQU10N20 Search Results

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    FQU10N20 Price and Stock

    onsemi FQU10N20CTU

    MOSFET N-CH 200V 7.8A IPAK
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    DigiKey FQU10N20CTU Tube 135 1
    • 1 $1.07
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    • 100 $0.52714
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    Newark FQU10N20CTU Bulk 5,040
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    Quest Components FQU10N20CTU 1,032
    • 1 $1.795
    • 10 $1.795
    • 100 $0.8975
    • 1000 $0.718
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    Rochester Electronics FQU10N20CTU 3,160 1
    • 1 $0.355
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    • 100 $0.3337
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    Rochester Electronics LLC FQU10N20TU

    MOSFET N-CH 200V 7.6A IPAK
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    DigiKey FQU10N20TU Tube 606
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    onsemi FQU10N20LTU

    MOSFET N-CH 200V 7.6A IPAK
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    DigiKey FQU10N20LTU Tube 5,040
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    Fairchild Semiconductor Corporation FQU10N20TU

    7.6A, 200V, 0.36ohm, N-Channel Power MOSFET, TO-251 '
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    Rochester Electronics FQU10N20TU 21,774 1
    • 1 $0.4767
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    • 100 $0.4481
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    FQU10N20 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQU10N20 Fairchild Semiconductor 200 V N-Channel MOSFET Original PDF
    FQU10N20C Fairchild Semiconductor Original PDF
    FQU10N20CTU Fairchild Semiconductor 200V N-Channel Advance Q-FET C-Series Original PDF
    FQU10N20L Fairchild Semiconductor 200 V Logic N-Channel MOSFET Original PDF
    FQU10N20LTU Fairchild Semiconductor 200V N-Channel Logic Level QFET Original PDF
    FQU10N20LTU Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 7.6A IPAK Original PDF
    FQU10N20TU Fairchild Semiconductor 200V N-Channel QFET Original PDF
    FQU10N20TU_AM002 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 7.6A IPAK Original PDF

    FQU10N20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    10n20c

    Abstract: 10n20
    Text: FQD10N20C / FQU10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD10N20C FQU10N20C swi000 FQD10N20CTF FQD10N20CTM 10n20c 10n20

    FQU10N20C

    Abstract: No abstract text available
    Text: QFET FQD10N20C / FQU10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD10N20C FQU10N20C FQU10N20C

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQD10N20L / FQU10N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQD10N20L FQU10N20L FQU10N20L FQU10N20LTU O-251

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQD10N20L / FQU10N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQD10N20L FQU10N20L FQD10N20LTM FQD10N20LTF O-252

    Untitled

    Abstract: No abstract text available
    Text: FQD10N20L / FQU10N20L N-Channel QFET MOSFET 200 V, 7.6 A, 360 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original     		PDF FQD10N20L FQU10N20L FQU10N20L

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQD10N20, FQU10N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 14nC Typ.


    Original     		PDF FQD10N20, FQU10N20 FQD10N20

    FQD10N20C

    Abstract: FQU10N20C
    Text: QFET FQD10N20C / FQU10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD10N20C FQU10N20C FQU10N20C

    Untitled

    Abstract: No abstract text available
    Text: FQD10N20L / FQU10N20L May 2000 QFET TM FQD10N20L / FQU10N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQD10N20L FQU10N20L

    Untitled

    Abstract: No abstract text available
    Text: QFET FQD10N20C / FQU10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD10N20C FQU10N20C

    FQD10N20L

    Abstract: FQU10N20L
    Text: QFET TM FQD10N20L / FQU10N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQD10N20L FQU10N20L FQU10N20L

    FQD10N20C

    Abstract: FQU10N20C
    Text: FQD10N20C / FQU10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD10N20C FQU10N20C FQU10N20C

    Untitled

    Abstract: No abstract text available
    Text: FQD10N20C / FQU10N20C N-Channel QFET MOSFET 200 V, 7.8 A, 360 mΩ Features Description • 7.8 A, 200 V, RDS on = 360 mΩ (Max.) @ VGS = 10 V, ID = 3.9 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary


    Original     		PDF FQD10N20C FQU10N20C

    Untitled

    Abstract: No abstract text available
    Text: QFET FQD10N20L / FQU10N20L TM 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQD10N20L FQU10N20L

    Untitled

    Abstract: No abstract text available
    Text: FQD10N20C / FQU10N20C N-Channel QFET MOSFET 200 V, 7.8 A, 360 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original     		PDF FQD10N20C FQU10N20C

    Untitled

    Abstract: No abstract text available
    Text:     QFET                                               !  


    Original     		PDF 33A03* FQU10N20TU O-251 FQU10N20

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


    Original     		PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    IRFU210A

    Abstract: IRFU230A FDU3706 FDU6030BL FDU6512A FDU6612A FDU6644 FDU6680A FDU6692 FDU7030BL
    Text: Discrete MOSFET TO-251 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-251(IPAK) N-Channel FDU3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDU6512A 20 Single - 0.021 0.031


    Original     		PDF O-251 O-251 FDU3706 FDU6512A ISL9N308AD3 ISL9N312AD3 ISL9N306AD3 FDU6644 FDU6680A FDU7037P06 IRFU210A IRFU230A FDU3706 FDU6030BL FDU6512A FDU6612A FDU6644 FDU6680A FDU6692 FDU7030BL

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A

    FSD210 8-pin

    Abstract: dvd players smps circuit diagram mosfet base inverter with chargers circuit fsd311 5pin Fairchild Power Switch ic 500 watt smps circuit diagram 600 watt smps schematic P-Channel MOSFET 600v 400 watt audio amplifier MOSFET schematic circuit 400 watt audio amplifier MOSFET
    Text: FSA4157/FSA1156/FSA1157 Industry’s Smallest Low Ohm Switches The FSA4157, FSA1156 and FSA1157 are 1 ohm single pole/double throw analog switches in MicroPakTM packaging that provides an 84% space savings over traditional SOT-23 packaging. These devices feature low On resistance RON


    Original     		PDF FSA4157/FSA1156/FSA1157 FSA4157, FSA1156 FSA1157 OT-23 FSA1156 FSA1157 FSA4157/FSA1156/FSA1157 FIN1215/FIN1216/FIN1217/FIN1218 FSD210 8-pin dvd players smps circuit diagram mosfet base inverter with chargers circuit fsd311 5pin Fairchild Power Switch ic 500 watt smps circuit diagram 600 watt smps schematic P-Channel MOSFET 600v 400 watt audio amplifier MOSFET schematic circuit 400 watt audio amplifier MOSFET

    sem 304

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQD10N20, FQU10N20 FEATURES BV qss = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 14nC Typ.


    OCR Scan     		PDF FQD10N20, FQU10N20 sem 304