2SK2193
Abstract: FP12W50VX2
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2193 N-Channel Enhancement type OUTLINE DIMENSIONS Case : ITO-3P FP12W50VX2 500V 12A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.
|
Original
|
PDF
|
2SK2193
FP12W50VX2)
2SK2193
FP12W50VX2
|
Untitled
Abstract: No abstract text available
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2193 FP12W50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : ITO-3P (Unit : mm) 500V 12A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
|
Original
|
PDF
|
2SK2193
FP12W50VX2)
|
2SK2193
Abstract: FP12W50VX2 500V12A
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2193 FP12W50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case Case : E-pack ITO-3P (Unit : mm) 500V 12A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.
|
Original
|
PDF
|
2SK2193
FP12W50VX2)
2SK2193
FP12W50VX2
500V12A
|
500V12A
Abstract: No abstract text available
Text: V X -Iv 'J-X /17-MOSFET VX -n SERIES POWER MOSFET W £ \H £ E ] O U T L IN E D IM E N S IO N S 2SK2193 FP12W50VX2 500v12a • R A TIN G S A b s o lu te M axim um R a tin g s m Item @ -V 7' Channel Temperature K U 4 > ■ v —x W ±Drain-Source Voltage
|
OCR Scan
|
PDF
|
/17-MOSFET
FP12W50VX2)
2SK2193
500v12a
500V12A
|
2SK2188
Abstract: F10W90HVX2 2SK2669 2SK2196 F20w 2SK2177 FP7W90HVX2 2SK2182
Text: ¡Ê fc -S lïi ü « R A T IN G S Teh V d s s V g s s Id DC EIA J No. Type No. «SlWflHÌ T c = 25"C E lectrical C h aracteristics Absolute Maximum Ratings [•c] [V ] [V ] P t R d s ON (max) Tc=25°C V g s = 1 0 V Id Iti C iss (typ) ton toff (typ) (typ)
|
OCR Scan
|
PDF
|
2SK2177
2SK2178
2SK2179
2SK2180
2SK2181
2SK2182
2SK2183
2SK2184
2SK2185
2SK2186
2SK2188
F10W90HVX2
2SK2669
2SK2196
F20w
FP7W90HVX2
|
Untitled
Abstract: No abstract text available
Text: V X - I I v U - X M 7 -M O S F E T VX-n SERIES POWER MOSFET O U T L IN E D IM E N S IO N S 2SK2193 F P 1 2W 50 V X 2 500v12 a • Ë fë ü R A TIN G S A b s o lu te Maxim um R a tin g s m y ih! Ite m -v Y- mUli. C h a n n e l T e m p e ra tu r e F M > • v
|
OCR Scan
|
PDF
|
2SK2193
500v12
FP12W50VX2)
|
Untitled
Abstract: No abstract text available
Text: V X - I ^ U “ X n 7 - MOSFET ; X* VX-li SERIES POWER MOSFET K M -b ill Case : IT0 - 3P 2SK2193 1S fl = 0.3 F P 1 2 W 5 0 V X 2 5 0 0 v 1 2 O U T L IN E D IM E N S IO N S 5.5-0-3 a 3.3-0-3 0.7^0.2 [ U n it - m m ] I fctem R A TIN G S litë ^ S ^ S Ë f ë
|
OCR Scan
|
PDF
|
2SK2193
FP12W50VX2)
0DD22Ã
|