FM18L08
Abstract: FM20L08 FM20L08-60-TG
Text: Preliminary FM20L08 1Mbit Bytewide FRAM Memory – Extended Temp. Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process
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FM20L08
128Kx8
33MHz
128Kx8
FM18L08
FM20L08
FM20L08-60-TG
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Untitled
Abstract: No abstract text available
Text: Preliminary FM20L08 1Mbit Bytewide FRAM Memory – Extended Temp. Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process
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FM20L08
128Kx8
33MHz
128Kx8
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FM18L08
Abstract: FM20L08 FM20L08-60-TG
Text: Preliminary FM20L08 1Mbit Bytewide FRAM Memory – Industrial Temp. Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process
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FM20L08
128Kx8
33MHz
128Kx8
FM18L08
FM20L08
FM20L08-60-TG
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Untitled
Abstract: No abstract text available
Text: Preliminary FM20L08 1Mbit Bytewide FRAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules
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FM20L08
128Kx8
33MHz
128Kx8
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TCA 290
Abstract: No abstract text available
Text: Preliminary FM20L08 1Mbit Bytewide FRAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules
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FM20L08
128Kx8
33MHz
128Kx8
TCA 290
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FM20L08
Abstract: No abstract text available
Text: Errata for FM20L08 1850 Ramtron Drive Colorado Springs, CO 80921 719-481-7000 FAX: 719-488-9095 Errata Number 002 Rev AD Date Jan. 24, 2005 Product 1Mbit FRAM, 128Kx8 Product Marking FM20L08-60 (all package types) Initial testing has identified some problems with FM20L08 rev AD samples. The new die revision complies with
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FM20L08
128Kx8
FM20L08-60
FM20L08
FM20L08ds
C88-9095
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TCA 290
Abstract: FM20L08-60-TG1 FM20L08-60 FM18L08 FM20L08 FM20L08-60-TG
Text: Preliminary FM20L08 1Mbit Bytewide FRAM Memory – Industrial Temp. Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process
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FM20L08
128Kx8
33MHz
128Kx8
TCA 290
FM20L08-60-TG1
FM20L08-60
FM18L08
FM20L08
FM20L08-60-TG
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Untitled
Abstract: No abstract text available
Text: Preliminary FM20L08 1Mbit Bytewide FRAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules
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FM20L08
128Kx8
33MHz
128Kx8
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Untitled
Abstract: No abstract text available
Text: Preliminary FM20L08 1Mbit Bytewide FRAM Memory – Extended Temp. Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process
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FM20L08
128Kx8
33MHz
128Kx8
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FM20L08
Abstract: FM20L08-60-TG
Text: Errata for FM20L08 1850 Ramtron Drive Colorado Springs, CO 80921 719-481-7000 FAX: 719-488-9095 Errata Number 003c applies to Date Codes up to 0605 Date Feb. 15, 2006 Product 1Mbit FRAM, 128Kx8 Product Marking FM20L08-60-TG (extended temperature) Testing has identified a problem with extended temperature FM20L08 samples. These parts comply with the
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FM20L08
128Kx8
FM20L08-60-TG
FM20L08
FM20L08T
FM20L08-60-TG
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FM20L08-60-TGC
Abstract: fram 128KX8 FM20L08 FM20L08-60TGC
Text: Errata for FM20L08 1850 Ramtron Drive Colorado Springs, CO 80921 719-481-7000 FAX: 719-488-9095 Errata Number 003a applies to Date Codes 0521 through 0605 Date Feb. 15, 2006 Product 1Mbit FRAM, 128Kx8 Product Marking FM20L08-60-TGC (commercial temperature)
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FM20L08
128Kx8
FM20L08-60-TGC
FM20L08
FM20L08TC
150ns
FM20L08-60-TGC
fram 128KX8
FM20L08-60TGC
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FM18L08
Abstract: FM20L08 FM20L08-60-TGC FM20L08-60
Text: Preliminary FM20L08 1Mbit Bytewide FRAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules
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FM20L08
128Kx8
33MHz
128Kx8
FM18L08
FM20L08
FM20L08-60-TGC
FM20L08-60
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FM18L08
Abstract: FM20L08 FM20L08-60-TG
Text: Preliminary FM20L08 1Mbit Bytewide FRAM Memory – Extended Temp. Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process
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FM20L08
128Kx8
33MHz
128Kx8
FM18L08
FM20L08
FM20L08-60-TG
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FM20L08-60-TGC
Abstract: FM18L08 FM20L08
Text: Preliminary FM20L08 1Mbit Bytewide FRAM Memory – Extended Temp. Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process
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FM20L08
128Kx8
33MHz
128Kx8
FM20L08-60-TGC
FM18L08
FM20L08
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FM18L08
Abstract: FM20L08 FM20L08-60-TGC
Text: Preliminary FM20L08 1Mbit Bytewide FRAM Memory – Extended Temp. Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process
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FM20L08
128Kx8
33MHz
128Kx8
FM28V100
FM18L08
FM20L08
FM20L08-60-TGC
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FM28V100
Abstract: 28V100 AN109 FM20L08
Text: AN109 Differences in FM20L08 and FM28V100 Applies to 1Mb Parallel F-RAM Devices DESCRIPTION This document points out the differences the FM20L08 and FM28V100 parallel F-RAM devices. For most designs, the FM28V100 device can be considered equivalent or better than the FM20L08. The two
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AN109
FM20L08
FM28V100
FM28V100
FM20L08.
28V100
AN109
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FM20L08
Abstract: AN-106 FM28V100 pin diagram of 32
Text: AN-106 Migrating from FM20L08 to FM28V100 How to Create a PCB for Compatibility DESCRIPTION The FM20L08 128Kx8 and FM28V100 (128Kx8) devices are offered in the 32-pin TSOP-I package. The package body size is 8.0 x 13.4 mm and the pin pitch is 0.5 mm. The two devices are not pin
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AN-106
FM20L08
FM28V100
FM20L08
128Kx8)
32-pin
FM28V100
AN-106
pin diagram of 32
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Untitled
Abstract: No abstract text available
Text: Preliminary FM20L08 1Mbit Bytewide FRAM Memory – Commercial Temp. Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process
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FM20L08
128Kx8
33MHz
128Kx8
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Untitled
Abstract: No abstract text available
Text: Preliminary FM20L08 1Mbit Bytewide FRAM Memory – Commercial Temp. Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process
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FM20L08
128Kx8
33MHz
128Kx8
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FM18L08
Abstract: FM20L08 FM20L08-60-TG TCA 290
Text: Preliminary FM20L08 1Mbit Bytewide FRAM Memory – Industrial Temp. Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process
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FM20L08
128Kx8
33MHz
128Kx8
FM28V100
FM18L08
FM20L08
FM20L08-60-TG
TCA 290
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FM18L08
Abstract: FM20L08 FM20L08-60-TGC FM20L08-60TGC
Text: Preliminary FM20L08 1Mbit Bytewide FRAM Memory – Extended Temp. Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process
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FM20L08
128Kx8
33MHz
128Kx8
FM18L08
FM20L08
FM20L08-60-TGC
FM20L08-60TGC
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FM28V100-TG
Abstract: FM28V100-TGTR tca 335 A
Text: FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 High Endurance 100 Trillion 1014 Read/Writes NoDelay Writes Page Mode Operation to 33MHz Advanced High-Reliability Ferroelectric Process
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FM28V100
128Kx8
33MHz
128Kx8
32-pin
FM28V100
FM28V100,
FM28V100-TG
A9482296TG
FM28V100-TGTR
tca 335 A
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FM22L16-55-TG
Abstract: FM20L08 FM22L16 256KX16
Text: Preliminary FM22L16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process
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FM22L16
256Kx16
512Kx8
40MHz
256Kx16
FM22L16
FM22L16,
FM22L16-55-TG
FM22L16-55-TG
FM20L08
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Untitled
Abstract: No abstract text available
Text: FM22L16 4Mbit Asynchronous F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process
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FM22L16
256Kx16
512Kx8
40MHz
256Kx16
FM22L16
rel10
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