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    FDP46N30 Datasheets (1)

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    FDP46N30 Fairchild Semiconductor 300v N-channel Mosfet Original PDF

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    FDP46N30

    Abstract: MOSFET 300V N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
    Text: UniFET TM FDP46N30 300V N-Channel MOSFET Features Description • 46A, 300V, RDS on = 0.079Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 58 nC)


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    PDF FDP46N30 O-220 FDP46N30 MOSFET 300V N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V

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    Abstract: No abstract text available
    Text: UniFET TM FDP46N30 300V N-Channel MOSFET Features Description • 46A, 300V, RDS on = 0.079Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 58 nC)


    Original
    PDF FDP46N30 FDP46N30