2SK2563
Abstract: F4F60VX2 600V,4A DIODE
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2563 F4F60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 600V4A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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PDF
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2SK2563
F4F60VX2)
FTO-220
600V4A
00-200V
110mJ
2SK2563
F4F60VX2
600V,4A DIODE
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600V,4A DIODE
Abstract: 2SK2563 600V4A F4F60VX2 2a 400v mosfet
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2563 F4F60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 600V4A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.
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Original
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PDF
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2SK2563
F4F60VX2)
FTO-220
600V4A
00-200V
110mJ
600V,4A DIODE
2SK2563
600V4A
F4F60VX2
2a 400v mosfet
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Untitled
Abstract: No abstract text available
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2563 F4F60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 600V4A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.
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Original
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PDF
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2SK2563
F4F60VX2)
600V4A
FTO-220
00-200V
110mJ
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shindengen SH 222
Abstract: -20/shindengen SH 222 2sk type
Text: Power MOS F E T Specification 1. Absolute Maximum Ratings Item Symbol Condition Ratings Unit - 5 5 - 1 5 0 °C Storage Temperature T s tg Channel Temperature ^ch 15 0 °C Drain-Source Voltage V d ss 6 0 0 V Gate-Sourse Voltage V GS S ±30 V Drain Current DC
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OCR Scan
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PDF
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2SK2563
shindengen SH 222
-20/shindengen SH 222
2sk type
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