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    2SK2180

    Abstract: F3V50VX2
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2180 F3V50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : TO-220 (Unit : mm) 500V3A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.


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    PDF 2SK2180 F3V50VX2) O-220 500V3A 2SK2180 F3V50VX2

    2SK2180

    Abstract: F3V50VX2
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2180 N-Channel Enhancement type OUTLINE DIMENSIONS Case : TO-220 F3V50VX2 500V3A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.


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    PDF 2SK2180 O-220 F3V50VX2) 500V3A 2SK2180 F3V50VX2

    Untitled

    Abstract: No abstract text available
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2180 F3V50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case Case : E-pack TO-220 (Unit : mm) 500V3A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.


    Original
    PDF 2SK2180 F3V50VX2) 500V3A O-220

    2SK2180

    Abstract: F3V50VX2
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2180 F3V50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case Case : E-pack TO-220 (Unit : mm) 500V3A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.


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    PDF 2SK2180 F3V50VX2) O-220 500V3A 2SK2180 F3V50VX2

    Untitled

    Abstract: No abstract text available
    Text: V X -E v 'J -X /X 9-M 0S FE T VX-n SERIES POWER MOSFET W fé\J->£H O U T L IN E D IM E N S IO N S 2SK2180 F3V50VX2 500v 3a • R A TIN G S ■ A b s o lu te Maxim um R a tin g s rS S Id Item (T c = 2 5 ° C ) ft 4k if Symbol *i Conditions fë ft * ii R atings


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    PDF 2SK2180 F3V50VX2)

    Untitled

    Abstract: No abstract text available
    Text: VX-1ïvU-X yt9—M0SFET V X - ! SERIES POWER MOSFET O U T L IN E D IM E N S IO N S 2SK2180 F3V50VX2 5 0 0 V 3A • fëfèm R A T IN G S ■ A b s o lu te Maxim um R a tin g s m Item h 3k fti/fiinlÆ Storage Temperature ~f~ -y ^ ll'fm.ïlÎ Channel Temperature


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    PDF 2SK2180 F3V50VX2)

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    Abstract: No abstract text available
    Text: V X -H i/U -X /^7-M OSFET is & x iv = s -y ,y V X -n SERIES POWER MOSFET O U T L IN E D IM E N S IO N S 2SK2180 F3V 50V X2 500v 3a • Æ fë * R A TIN G S ■ A bsolute Maximum R atings m g (T c = 2 5 ° C ) 12 . Symbol Item m C onditions fê « R atings


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    PDF 2SK2180 12SK2180 F3V50VX2)

    2SK2188

    Abstract: F10W90HVX2 2SK2669 2SK2196 F20w 2SK2177 FP7W90HVX2 2SK2182
    Text: ¡Ê fc -S lïi ü « R A T IN G S Teh V d s s V g s s Id DC EIA J No. Type No. «SlWflHÌ T c = 25"C E lectrical C h aracteristics Absolute Maximum Ratings [•c] [V ] [V ] P t R d s ON (max) Tc=25°C V g s = 1 0 V Id Iti C iss (typ) ton toff (typ) (typ)


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    PDF 2SK2177 2SK2178 2SK2179 2SK2180 2SK2181 2SK2182 2SK2183 2SK2184 2SK2185 2SK2186 2SK2188 F10W90HVX2 2SK2669 2SK2196 F20w FP7W90HVX2