2SK2676
Abstract: F10W90HVX2 26mJ 2SK2676 equivalent
Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2676 F10W90HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3P (Unit : mm) 900V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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2SK2676
F10W90HVX2
260mJ
2SK2676
F10W90HVX2
26mJ
2SK2676 equivalent
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2SK2676
Abstract: F10W90HVX2
Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2676 F10W90HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3P (Unit : mm) 900V 10A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.
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2SK2676
F10W90HVX2
260mJ
2SK2676
F10W90HVX2
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F10W90HVX2
Abstract: No abstract text available
Text: H V X - n ^ ' J - X A 7 -M 0 S F E T HVX-n SERIES POWER MOSFET • W fêTH È H ] O U T L IN E D IM E N S IO N S 2SK2676 F10W90HVX2 900v 10 a ■ R A TIN G S ■ (T c= 25”C) A b s o lu te Maxim um R a tin g s m Item g JUiààfü. Channel Temperature KU < > • V- -A W \\
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2SK2676
F10W90HVX2)
10/fS.
F10W90HVX2
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Untitled
Abstract: No abstract text available
Text: HVX-I^U-X /f7—MOSFET H V X -Ï SERIES POWER MOSFET N - i- v ^ B T fä s B I hM O U T L IN E D IM E N S IO N S Case : MT0-3P 2SK2676 F10W90HVX2 5.0Ì0-3 ¿3.3*°-* 900v 10a 2.0±0-3 2.4t0-3 0.65±»-î @ : Gate (D Drain (3) '. S o u rce [Unit •mm] ■
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2SK2676
F10W90HVX2)
ji2113fi?
DG0232b
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2SK2188
Abstract: F10W90HVX2 2SK2669 2SK2196 F20w 2SK2177 FP7W90HVX2 2SK2182
Text: ¡Ê fc -S lïi ü « R A T IN G S Teh V d s s V g s s Id DC EIA J No. Type No. «SlWflHÌ T c = 25"C E lectrical C h aracteristics Absolute Maximum Ratings [•c] [V ] [V ] P t R d s ON (max) Tc=25°C V g s = 1 0 V Id Iti C iss (typ) ton toff (typ) (typ)
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2SK2177
2SK2178
2SK2179
2SK2180
2SK2181
2SK2182
2SK2183
2SK2184
2SK2185
2SK2186
2SK2188
F10W90HVX2
2SK2669
2SK2196
F20w
FP7W90HVX2
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