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    EGP10D Search Results

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    EGP10D Price and Stock

    onsemi EGP10D

    DIODE GEN PURP 200V 1A DO41
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey EGP10D Cut Tape 9,760 1
    • 1 $0.49
    • 10 $0.328
    • 100 $0.49
    • 1000 $0.14598
    • 10000 $0.14458
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    EGP10D Reel 5,000 5,000
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    Avnet Americas EGP10D Reel 18 Weeks 10,000
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    Mouser Electronics EGP10D 6,970
    • 1 $0.49
    • 10 $0.328
    • 100 $0.222
    • 1000 $0.136
    • 10000 $0.123
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    Newark EGP10D Reel 5,000
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    Onlinecomponents.com EGP10D
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    Bristol Electronics EGP10D 5,000
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    Quest Components EGP10D 4,000
    • 1 $0.482
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    • 100 $0.482
    • 1000 $0.1446
    • 10000 $0.0964
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    Richardson RFPD EGP10D 10,000
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    Avnet Silica EGP10D 19 Weeks 5,000
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    EBV Elektronik EGP10D 20 Weeks 5,000
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    Flip Electronics EGP10D 10,000
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    Vishay Semiconductors EGP10D-E3-54

    DIODE GEN PURP 200V 1A DO204AL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey EGP10D-E3-54 Cut Tape 5,261 1
    • 1 $0.55
    • 10 $0.368
    • 100 $0.55
    • 1000 $0.19242
    • 10000 $0.17864
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    EGP10D-E3-54 Reel 5,500
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    Rochester Electronics LLC EGP10D

    RECTIFIER DIODE, 1A, 200V, DO-41
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey EGP10D Bulk 2,342
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    Vishay Semiconductors EGP10D-E3-73

    DIODE GEN PURP 200V 1A DO204AL
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    DigiKey EGP10D-E3-73 Ammo Pack
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    Vishay Semiconductors EGP10DHE3-53

    DIODE GEN PURP 200V 1A DO204AL
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    DigiKey EGP10DHE3-53 Ammo Pack
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    EGP10D Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EGP10D Fagor 200 V, 1 A glass passivated avalanche ultrafast recovery rectifier Original PDF
    EGP10D Fairchild Semiconductor 1.0 Ampere Glass Passivated High Efficiency Rectifiers Original PDF
    EGP10D Fairchild Semiconductor 1.0A Ultra Fast Recovery Rectifier Original PDF
    EGP10D Fairchild Semiconductor Fast Rectifiers (Glass Passivated) Original PDF
    EGP10D Fairchild Semiconductor 1.0A Ultra Fast Recovery Rectifier; Package: DO-41; No of Pins: 2; Container: Tape & Reel Original PDF
    EGP10D Galaxy Semi-Conductor Holdings HIGH EFFICIENCY RECTIFIER Original PDF
    EGP10D General Semiconductor GLASS PASSIVATED FAST EFFICIENT RECTIFIER Original PDF
    EGP10D General Semiconductor GLASS PASSIVATED FAST EFFICIENT RECTIFIER Original PDF
    EGP10D Micro Commercial Components 1.0 Amp Glass Passivated High Efficient Rectifiers 50 to 800 Volts Original PDF
    EGP10D Taitron Components 1.0A Sintered Glass Passivated Super Fast Recovery Rectifier Original PDF
    EGP10D Taiwan Semiconductor 1.0 AMP. Glass Passivated High Efficient Plastic Rectifiers Original PDF
    EGP10D Taiwan Semiconductor 1.0 A Glass Passivated High Efficient Plastic Rectifier Original PDF
    EGP10D Zowie Technology SINTERED GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER Original PDF
    EGP10D Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    EGP10D-E3/53 Vishay General Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST 1A 200V 50NS DO-41 Original PDF
    EGP10D-E3/54 Vishay General Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST REC 200V 1A DO204AL Original PDF
    EGP10D-E3/73 Vishay General Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST REC 200V 1A DO204AL Original PDF
    EGP10DE-E3/54 Vishay General Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST REC 200V 1A DO204AL Original PDF
    EGP10DEHE3/54 Vishay General Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST REC 200V 1A DO204AL Original PDF
    EGP10DEHM3/73 Vishay Semiconductors Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST 1A 200V 50NS DO-41 Original PDF

    EGP10D Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FUF5404

    Abstract: DO-201AD FUF5407 FUF4005 FUF5406 Ultra-Fast Recovery Rectifiers FUF5402 byv26c BYV26E FUF4002
    Text: QUICK GUIDE Ultrafast Recovery Rectifiers ULTRAFAST RECOVERY RECTIFIERS (AXIAL DEVICES) IF IFSM 50V 100V 200V 300V 400V 0.8A 25A EGP08A EGP08B EGP08D EGP08F* EGP08G* FUF4000 1A 30A FUF4001 FUF4002 FUF4003 FUF4004 FUF4005* EGP10 1A 30A EGP10A EGP10B EGP10D


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    EGP08A EGP08B EGP08D EGP08F* EGP08G* FUF4000 FUF4001 FUF4002 FUF4003 FUF4004 FUF5404 DO-201AD FUF5407 FUF4005 FUF5406 Ultra-Fast Recovery Rectifiers FUF5402 byv26c BYV26E FUF4002 PDF

    Untitled

    Abstract: No abstract text available
    Text: EGP10A, EGP10B, EGP10C, EGP10D, EGP10F, EGP10G www.vishay.com Vishay General Semiconductor Glass Passivated Ultrafast Plastic Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER


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    EGP10A, EGP10B, EGP10C, EGP10D, EGP10F, EGP10G DO-204AL DO-41) 22-B106 AEC-Q101 PDF

    DO-204AL

    Abstract: EGP10D JESD22-B102D J-STD-002B egp 100
    Text: EGP10D Glass Passivated Junction Fast Efficient Rectifiers PRODUCT SUMMARY Reverse Voltage 50 to 400 Volts Forward Current 1.0 Ampere FEATURES Cavity-free glass-passivated junction Ultrafast reverse recovery time Low forward voltage drop Low leakage current


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    EGP10D DO-204AL, UL-94V-0 J-STD-002B JESD22-B102D DO-204AL EGP10D JESD22-B102D J-STD-002B egp 100 PDF

    J-STD-002

    Abstract: DO-204AL EGP10A EGP10G
    Text: EGP10A thru EGP10G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER • Ultrafast reverse recovery time • Low forward voltage drop


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    EGP10A EGP10G DO-204AL DO-41) 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 11-Mar-11 J-STD-002 DO-204AL EGP10G PDF

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


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    represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355 PDF

    diode cross reference

    Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
    Text: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS


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    PDF

    BYD74G

    Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
    Text: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any


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    5KA10 5KA10A 5KA11 5KA11A 5KA12 5KA12A 5KA13 5KA13A 5KA15 5KA15A BYD74G FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z PDF

    2x062h

    Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
    Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1


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    ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062 PDF

    COLOR tv tube charger circuit diagrams

    Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    vse-db0001-1102 I8262 COLOR tv tube charger circuit diagrams MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC EGP10A THRU EGP10K   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 1.0 Amp Glass Passivated High Efficient Rectifiers 50 to 800 Volts Features • Glass passivated cavity-free junction, Plastic Case


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    EGP10A EGP10K DO-41 -55OC 50OC/W EGP10B EGP10D EGP10F PDF

    MBR1620CT

    Abstract: 1.5Ke240 MBR5020 MBR5045PT BC337 AP6KE15C S9012 s9018 MP106 MB-106
    Text: MCC PART INDEX Diodes PART NUMBER 1.5KE10(C)(A) 1.5KE100(C)(A) 1.5KE11(C)(A) 1.5KE110(C)(A) 1.5KE12(C)(A) 1.5KE120(C)(A) 1.5KE13(C)(A) 1.5KE130(C)(A) 1.5KE15(C)(A) 1.5KE150(C)(A) 1.5KE16(C)(A) 1.5KE160(C)(A) 1.5KE17(C)(A) 1.5KE170(C)(A) 1.5KE18(C)(A) 1.5KE180(C)(A)


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    5KE10 5KE100 5KE11 5KE110 5KE12 5KE120 5KE13 5KE130 5KE15 5KE150 MBR1620CT 1.5Ke240 MBR5020 MBR5045PT BC337 AP6KE15C S9012 s9018 MP106 MB-106 PDF

    EGP10B

    Abstract: EGP10G
    Text: EGP10A thru EGP10G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • • • • • • • • ed* t n e Pat *Glass Encapsulation technique is covered by Patent No. 3,996,602, brazed-lead assembly to Patent No. 3,930,306 DO-204AL DO-41


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    EGP10A EGP10G DO-204AL DO-41) 2002/95/EC 2002/96/EC 08-Apr-05 EGP10B EGP10G PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product EGP10A thru EGP10G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop


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    EGP10A EGP10G 22-B106 AEC-Q101 2002/95/EC 2002/96/EC DO-204AL DO-41) 11-Mar-11 PDF

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


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    BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 PDF

    EGP10B

    Abstract: EGP10G
    Text: EGP10A thru EGP10G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 200 V IFSM 30 A trr 50 ns VF 0.95 V, 1.25 V Tj max. 150 °C ed* t n e Pat *Glass Encapsulation technique is covered by


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    EGP10A EGP10G DO-204AL DO-41) DO-204AL, UL-94V-0 24-Oct-05 EGP10B EGP10G PDF

    Untitled

    Abstract: No abstract text available
    Text: EGP10A . EGP10J 1 Amp. Glass Passivated Avalanche Ultrafast Recovery Rectifier Dimensions in mm. DO-41 Plastic Current 1.0 A at 55 °C ø0.8 ±0.05 ø2.6 ±0.1 Voltage 50 to 600 V R +0.2 5-0 ±0.5 58.5 Mounting instructions 1. Min. distance from body to soldering point,


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    EGP10A EGP10J DO-41 EGP10A EGP10B EGP10D EGP10F EGP10G EGP10J PDF

    EGP10B

    Abstract: EGP10G
    Text: EGP10A thru EGP10G Vishay Semiconductors Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 200 V IFSM 30 A trr 50 ns VF 0.95 V, 1.25 V Tj max. 150 °C ed* t n e Pat *Glass Encapsulation technique is covered by


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    EGP10A EGP10G DO-204AL DO-41) DO-204AL, UL-94V-0 10-Aug-05 EGP10B EGP10G PDF

    DO-204AL

    Abstract: EGP10
    Text: EGP10AH THRU EGP10MH SINTERED GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER Reverse Voltage - 50 to 1000 Volts TTEEDD N N E E T T A PPA Forward Current - 1.0 Ampere DO-204AL FEATURES * Halogen-free type 1.0 25.4 MIN. * GPRC (Glass Passivated Rectifier Chip) inside


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    EGP10AH EGP10MH DO-204AL EGP10JH EGP10GH EGP10DH DO-204AL EGP10 PDF

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


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    MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent PDF

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


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    MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 PDF

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


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    MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45 PDF

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


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    MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode PDF

    EGP10J

    Abstract: EGP10D
    Text: MCC EGP10A THRU EGP10K   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • 1.0 Amp Glass Passivated High Efficient Rectifiers 50 to 800 Volts Superfast recovery time for high efficiency


    Original
    EGP10A EGP10K DO-41 -55OC 50OC/W EGP10B EGP10D EGP10F EGP10J EGP10D PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC H IG H E F F IC IE N T R E C TIFIER S OPERATING/STORAGE TEMPERATURE RANGE: -55"C Average Forward Working Current @ HalfPeak Reverse Wave MCC Part Number Resistive Load Voltage 60Hz V rwm Ifiavi Çg T L V A I °C TO 150CC Forward Peak Surge Current @ 8.3mS


    OCR Scan
    HER101S HER102S HER103S HER104S HER105S HER106S HER107S HER108S HER101 HER102 PDF