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    DQ023 Price and Stock

    Micron Technology Inc MT62F1G32D2DQ-023 AUT:C

    LPDDR5 32GBIT 32 315/315 VFBGA - Trays (Alt: MT62F1G32D2DQ-023)
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    Avnet Americas MT62F1G32D2DQ-023 AUT:C Tray 1,050
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    Mouser Electronics MT62F1G32D2DQ-023 AUT:C
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    Newark MT62F1G32D2DQ-023 AUT:C Bulk 1,050
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    Micron Technology Inc MT62F1G32D2DQ-023 FAAT:C

    LPDDR5 32GBIT 32 315/315 VFBGA 2 AT - Trays (Alt: MT62F1G32D2DQ-023)
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    Mouser Electronics MT62F1G32D2DQ-023 FAAT:C
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    Micron Technology Inc MT62F1G32D2DQ-023 AAT:C TR

    LPDDR5 32GBIT 32 315/315 VFBGA - Tape and Reel (Alt: MT62F1G32D2DQ-023)
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    Avnet Americas MT62F1G32D2DQ-023 AAT:C TR Reel 2,000
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    Mouser Electronics MT62F1G32D2DQ-023 AAT:C TR
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    Micron Technology Inc MT62F1G32D2DQ-023 WT ES:C TR

    LPDDR5 32GBIT 32 315/315 VFBGA - Tape and Reel (Alt: MT62F1G32D2DQ-023)
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    Avnet Americas MT62F1G32D2DQ-023 WT ES:C TR Reel 2,000
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    Mouser Electronics MT62F1G32D2DQ-023 WT ES:C TR
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    Micron Technology Inc MT62F1G32D2DQ-023 WT:C TR

    LPDDR5 32GBIT 32 315/315 VFBGA - Tape and Reel (Alt: MT62F1G32D2DQ-023)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas MT62F1G32D2DQ-023 WT:C TR Reel 2,000
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    Mouser Electronics MT62F1G32D2DQ-023 WT:C TR
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    DQ023 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    WED8L24257V

    Abstract: DSP5630X
    Text: WED8L24257V Asynchronous SRAM, 3.3V, 256Kx24 FEATURES DESCRIPTION n 256Kx24 bit CMOS Static The WED8L24257VxxBC is a 3.3V, twelve megabit SRAM constructed with three 256Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V


    Original     		PDF WED8L24257V 256Kx24 256Kx24 WED8L24257VxxBC 256Kx8 WED8L24257V DSP5630x 2106xL DSP5630X

    WED8L24513V

    Abstract: No abstract text available
    Text: WED8L24513V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION 512Kx24 bit CMOS Static The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V


    Original     		PDF WED8L24513V 512Kx24 512Kx24 WED8L24513VxxBC 512Kx8 WED8L24513V DSP5630x 2106xL

    MT29F8G08ABABA

    Abstract: MT29F8G08ABABAWP MT29F8G08aba MT29F8G08A MT29F8G08ab 29f8g08 Micron NAND flash M61A 8gb FLASH DRIVE 00H-31H
    Text: Micron Confidential and Proprietary 8Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F8G08ABABA, MT29F8G08ABCBB Features • Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status


    Original     		PDF MT29F8G08ABABA, MT29F8G08ABCBB 09005aef8386131b MT29F8G08ABABA MT29F8G08ABABAWP MT29F8G08aba MT29F8G08A MT29F8G08ab 29f8g08 Micron NAND flash M61A 8gb FLASH DRIVE 00H-31H

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs EDI8L24129V 128Kx24 SRAM 3.3 Volt FEATURES DESCRIPTION 128Kx24 bit CMOS Static The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multilayer laminate substrate. With 10 to 15ns access times,


    Original     		PDF EDI8L24129V 128Kx24 EDI8L24129VxxBC 128Kx8 DSP5630x 21060L 21062L EDI8L24129V,

    vlga

    Abstract: MT29F64G08 256Gb NAND
    Text: Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F32G08ABAAA, MT29F64G08AFAAA, MT29F128G08A[J/K/M]AAA MT29F256G08AUAAA, MT29F32G08ABCAB, MT29F64G08AECAB MT29F128G08A[K/M]CAB, MT29F256G08AUCAB


    Original     		PDF 128Gb, 256Gb MT29F32G08ABAAA, MT29F64G08AFAAA, MT29F128G08A MT29F256G08AUAAA, MT29F32G08ABCAB, MT29F64G08AECAB MT29F256G08AUCAB vlga MT29F64G08 256Gb NAND

    WED8L24258V

    Abstract: No abstract text available
    Text: WED8L24258V Asynchronous SRAM, 3.3V, 256Kx24 FEATURES DESCRIPTION n 256Kx24 bit CMOS Static The WED8L24258VxxBC is a 3.3V, twelve megabit SRAM constructed with three 256Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V


    Original     		PDF WED8L24258V 256Kx24 256Kx24 WED8L24258VxxBC 256Kx8 WED8L24258V DSP5630x WED8L24258V10BC WED8L24258V12BC WED8L24258V15BC

    MT29F16G08ABACA

    Abstract: MT29F16G08ABACAWP 64gb NAND chip MT29F32G08afacawp MT29F32G08AFACA MT29F64G08 M72A micron nand flash chip 16gb MT29F16G08ABCCBH1-10ITZ:C TR MT29F16G08AB
    Text: Micron Confidential and Proprietary 16Gb, 32Gb, 64Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F16G08ABACA, MT29F32G08AFACA MT29F16G08ABCCB, MT29F32G08AECCB, MT29F64G08AKCCB Features • Data strobe DQS signals provide a hardware method for synchronizing data DQ in the synchronous


    Original     		PDF MT29F16G08ABACA, MT29F32G08AFACA MT29F16G08ABCCB, MT29F32G08AECCB, MT29F64G08AKCCB 09005aef844588dc MT29F16G08ABACA MT29F16G08ABACAWP 64gb NAND chip MT29F32G08afacawp MT29F64G08 M72A micron nand flash chip 16gb MT29F16G08ABCCBH1-10ITZ:C TR MT29F16G08AB

    MT29F16G08ABACA

    Abstract: MT29F32G08afacawp JESD47 compliant MT29F32G08AFACA MT29F16G08Abacawp MT29F32G08A MT29F64G08A MT29F64G08 DR10H NAND Flash DIE
    Text: Micron Confidential and Proprietary 16Gb, 32Gb, 64Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F16G08ABACA, MT29F32G08AFACA MT29F16G08ABCCB, MT29F32G08AECCB, MT29F64G08AKCCB Features • Data strobe DQS signals provide a hardware method for synchronizing data DQ in the synchronous


    Original     		PDF MT29F16G08ABACA, MT29F32G08AFACA MT29F16G08ABCCB, MT29F32G08AECCB, MT29F64G08AKCCB 09005aef844588dc MT29F16G08ABACA MT29F32G08afacawp JESD47 compliant MT29F16G08Abacawp MT29F32G08A MT29F64G08A MT29F64G08 DR10H NAND Flash DIE

    WED8L24513V

    Abstract: 2106XL
    Text: WED8L24513V White Electronic Designs Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION  512Kx24 bit CMOS Static  Random Access Memory Array     Fast Access Times: 10, 12, and 15ns  Master Output Enable and Write Control  TTL Compatible Inputs and Outputs


    Original     		PDF WED8L24513V 512Kx24 512Kx24 14mmx22mm MO-163) WED8L24513VxxBC 512Kx8 2106XL WED8L24513V

    29f32g08

    Abstract: MT29F64G08C MT29F32G08CBABA MT29F128G08C MT29F32G08C MT29F256G08 MT29F32G08CBABAWP MT29F32G08CB 29F32G mt29f32g08cba
    Text: Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F32G08CBABA, MT29F64G08C[E/F]ABA, MT29F128G08C[J/K/M]ABA, MT29F256G08CUABA, MT29F32G08CBABB, MT29F32G08CBCBB, MT29F64G08CFABB, MT29F64G08CECBB, MT29F128G08CJABB,


    Original     		PDF 128Gb, 256Gb MT29F32G08CBABA, MT29F64G08C MT29F128G08C MT29F256G08CUABA, MT29F32G08CBABB, MT29F32G08CBCBB, MT29F64G08CFABB, MT29F64G08CECBB, 29f32g08 MT29F32G08CBABA MT29F32G08C MT29F256G08 MT29F32G08CBABAWP MT29F32G08CB 29F32G mt29f32g08cba

    512kx8

    Abstract: No abstract text available
    Text: WED8L24514V Asynchronous, 3.3V, 512Kx24 FEATURES 512Kx24 bit CMOS Static The WED8L24514VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the WED8L24514V is ideal for creating a single


    Original     		PDF WED8L24514V 512Kx24 512Kx24 MO-163) 14mmx22mm DSP5630xTM 512Kx8, WED8L24514V10BC WED8L24514V12BC WED8L24514V15BC 512kx8

    EDI8L24128C

    Abstract: No abstract text available
    Text: White Electronic Designs EDI8L24128C 128Kx24 Asynchronous SRAM, 5V FEATURES DESCRIPTION 128Kx24 bit CMOS Static Random Access Memory Array Fast Access Times: 12 and 15ns Master Output Enable and Write Control TTL Compatible Inputs and Outputs Fully Static, No Clocks


    Original     		PDF EDI8L24128C 128Kx24 MO-163) DSP5600xTM EDI8L24128CxxBC 128Kx8 EDI8L2418C MO-163 EDI8L24128C

    mt29f128g08

    Abstract: MT29F256G08 MT29F64G08 MT29F64G08AE MT29F32G08 MT29F128G MT29F256G08A MT29F128G08AM MT29F256G MT29F128
    Text: Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F32G08ABAAA, MT29F64G08AFAAA, MT29F128G08A[J/K/M]AAA MT29F256G08AUAAA, MT29F32G08ABCAB, MT29F64G08AECAB MT29F128G08A[K/M]CAB, MT29F256G08AUCAB


    Original     		PDF 128Gb, 256Gb MT29F32G08ABAAA, MT29F64G08AFAAA, MT29F128G08A MT29F256G08AUAAA, MT29F32G08ABCAB, MT29F64G08AECAB MT29F256G08AUCAB mt29f128g08 MT29F256G08 MT29F64G08 MT29F64G08AE MT29F32G08 MT29F128G MT29F256G08A MT29F128G08AM MT29F256G MT29F128

    MT29F16G08ABACA

    Abstract: MT29F32G08 MT29F16G08ABACAWP 29f16g08 MT29F32G08AFACA MT29F16G08ABA MT29F32G08afacawp M72A Micron ONFI 2.2 MT29F16G08ABAC
    Text: Micron Confidential and Proprietary Advance‡ 16Gb, 32Gb Asynchronous/Synchronous NAND Features NAND Flash Memory • Data strobe DQS signals provide a hardware method for synchronizing data DQ in the synchronous interface • Copyback operations supported within the plane


    Original     		PDF MT29F16G08ABACA, MT29F32G08AFACA MT29F16G08ABCCB, MT29F32G08AECCB MT29F16G08ABCCBH1 09005aef83fccd10 MT29F16G08ABACA MT29F32G08 MT29F16G08ABACAWP 29f16g08 MT29F16G08ABA MT29F32G08afacawp M72A Micron ONFI 2.2 MT29F16G08ABAC

    EDI8L24128C

    Abstract: No abstract text available
    Text: EDI8L24128C White Electronic Designs 128Kx24 Asynchronous SRAM, 5V FEATURES DESCRIPTION  128Kx24 bit CMOS Static The EDI8L24128CxxBC is a 5V, three megabit SRAM constructed with three 128Kx8 die mounted on a multilayer laminate substrate. With 12 to 15ns access times, x24


    Original     		PDF EDI8L24128C 128Kx24 EDI8L24128CxxBC 128Kx8 EDI8L2418C DSP5600x MO-163) MO-163 EDI8L24128C

    Untitled

    Abstract: No abstract text available
    Text: EDI8L24129V White Electronic Designs 128Kx24 SRAM 3.3 Volt FEATURES DESCRIPTION The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multilayer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the EDI8L24129V


    Original     		PDF EDI8L24129V 128Kx24 EDI8L24129VxxBC 128Kx8 DSP5630x 21060L 21062L EDI8L24129V,

    Untitled

    Abstract: No abstract text available
    Text: WED8L24514V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION 512Kx24 bit CMOS Static The WED8L24514VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V


    Original     		PDF WED8L24514V 512Kx24 512Kx24 MO-163) 14mmx22mm DSP5630x 512Kx8, WED8L24514V10BC WED8L24514V12BC WED8L24514V15BC

    BCX71RG

    Abstract: BCW61RB bcw61rd
    Text: T T T SEMI CON DUC TOR S 67 87D DE§ 4tainss DQ02353 1 r 02323 D PNP TRANSISTORS PNP Silicon Transistors Plastic Package TO-236 Marking Code - ~VcEO hpE Volts “ VcEsat at at - V C e/ - I c —Ic/—Ib - I ces at fr “ V ce Cob at -V c e /~I c CD Type


    OCR Scan     		PDF DQ02353 O-236) BC807-16 BC807-25 BC807-40 BC808-16 BC808-25 BC808-40 BC856A BC856B BCX71RG BCW61RB bcw61rd

    R001

    Abstract: schottkey 1N3909-13 G0003 G0006 G0009 INI199-1206
    Text: SOLID STATE DEVICES INC 12E D |fl3bh011 DQ023.m 0 | T-ei-ofr .Geometry Popular Part Numbers RECTIFIERS, STANDARD RECOVERY GÛÛOA GOOOC GOOOE RECTIFIERS, GOOOB GOOOD GOOOM RECTIFIERS, G0003 G0009 GOOOJ G0006 G0007 GOOOM GOOOS 1N4245-49 1N5415-20 I N I 199-1206


    OCR Scan     		PDF fi3kb011 1N4245-49 1N5415-20 INI199-1206 1N4942-46 150nsec 1N3889-93 1N3909-13 R001 schottkey G0003 G0006 G0009

    P 32240

    Abstract: No abstract text available
    Text: QSFCT3240, 3244, 32240, 32244 PRELIMINARY 3.3 Volt CMOS 8-BÌt Q QS74FCT3240 QS74FCT3244 Buffers/Line Drivers JgÏ Ï S S J Î FEATURES/BENEFITS • • • • • Pin and function compatible to the 74F240/4 74LVT240/4 and 74FCT240T/4T Available in SOIC and QSOP


    OCR Scan     		PDF QSFCT3240, QS74FCT3240 QS74FCT3244 74F240/4 74LVT240/4 74FCT240T/4T FCT3240 FCT3244 MS-013AA PS16A P 32240

    1553 bus

    Abstract: HM-65664 80C31M
    Text: 5öbß45b QÜ0E3M3 1ÖT • MMHS January 1991 Preview MATRA H H S 29C530 HI-REL DATA SHEET MIL-STD-1553B PROTOCOL MANAGEMENT UNIT FEATURES . PIN PROGRAMMABLE FEATURES : - COMPATIBILITY WITH INTEL AND MOTOROLA MICROPROCESSORS - 8 OR 16 BIT INTERFACE - SUPPORT OF THREE MEMORY INTERFACE


    OCR Scan     		PDF 29C530 MIL-STD-1553B 29H531 MIL-STD1553B 29T532 000237b 1553 bus HM-65664 80C31M

    Westinghouse thyristor

    Abstract: P214PH06FJ0
    Text: WESTCODE SEMICONDUCTORS 3TE S • 0002303 S ■ IdESB j" */9 Technical Publication W ESTCO D E $ SEMICONDUCTORS TP214P Issue 1 November 1984 Inverter Grade Stud-Base Thyristor Type P214P 195 amperes average: up to 800 volts V rrm IV Drm R a t i n g s Maximum values at 125°C Tj unless stated otherwise


    OCR Scan     		PDF 0DD23D3 P214P TP214P -16UNF-ZAâ Westinghouse thyristor P214PH06FJ0

    AD7545

    Abstract: AD7545GLCWP AD7545GLN AD7545JCWP AD7545JN AD7545KN AD7545LCWP AD7545LN GL RESISTOR ARRAY AD7545BQ
    Text: MAXIM INTEGR ATE D PRODUCTS 13E D • y Sfl7bbSl DDG23Gfl 1 n y i x i y n CMOS 12-B it B uffered M ultiplying DAC _ General Description _ T ' S / - 0 9 £ ¡2- The AD7545 is a 12-bit CMOS m ultiplying digital-toanalog converter DAC with internal data latches.


    OCR Scan     		PDF 23Dfl 12-Bit AD7545 AD7545GLCWP AD7545GLN AD7545JCWP AD7545JN AD7545KN AD7545LCWP AD7545LN GL RESISTOR ARRAY AD7545BQ

    Untitled

    Abstract: No abstract text available
    Text: THYRISTOR MODULE n o n -ISOLATED TYPE PWB60A P W B 6 0 A is a Thyristor module suitable for low voltage, 3 phase rectifier applications. • IF(avj:60A (each device) • High Surge Current 1800 A (60Hz) • Easy Construction • Non-isolated. Mounting base as common Anode terminal


    OCR Scan     		PDF PWB60A 60A30 DQ02375 B-219 J1243 000537b