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    Dawin Electronics Co Ltd DM2G200SH12AE

    High Power SPT+ and Lugged Type IGBT Module Insulated Gate Bipolar Transistor, 275A I(C), 1200V V(BR)CES, N-Channel
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    DM2G200SH12AE

    Abstract: igbt 200 smps 1200v FOR INDUCTION HEATING dm2g200sh12a IGBT 200A 1200V dm2g200
    Text: D W DAWIN Electronics TM DM2G200SH12AE May. 2009 High Power SPT+ & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN’S IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems.


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