A12 diode
Abstract: diode 0450
Text: TESDQ5V0ULC Ultra Low Capacitance ESD Protection Diode Small Signal Diode 0402 DFN1006 Features Cell Phone Handsets and Accessories Microprocessor based equipment Personal Digital Assisitants(PDA's) Notebooks,Desktops,and Servers Pb free version, RoHS compliant, and Halogen free
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DFN1006)
MIL-STD-750,
C/10s
IEC61000-4-2
IEC61000-4-4
5/50s)
8/20s
A12 diode
diode 0450
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PDF
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Untitled
Abstract: No abstract text available
Text: TESDQ5V0 Bi-directional ESD Protection Diode Small Signal Diode DFN1006 0402 Features Meet IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) Meet IEC61000-4-4 (EFT) rating. 40A (5/50ήs) 100W Peak Pulse Power per Line (tp=8/20 s) Protects one birectional I/O line
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DFN1006
IEC61000-4-2
IEC61000-4-4
5/50s)
8/20s)
DFN1006
UL94V-0
MIL-STD-750,
C/10s
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PDF
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Untitled
Abstract: No abstract text available
Text: SO T8 83 B PESD5V0X2UAMB Ultra low capacitance unidirectional double ESD protection diode 10 April 2014 Product data sheet 1. General description Ultra low capacitance unidirectional double ElectroStatic Discharge ESD protection diode in a DFN1006B-3 (SOT883B) leadless ultra small Surface-Mounted Device (SMD)
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DFN1006B-3
OT883B)
IEC61000-4-2
AEC-Q101
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PDF
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Untitled
Abstract: No abstract text available
Text: SO T8 83 B PMZB950UPE 20 V, P-channel Trench MOSFET 28 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
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PMZB950UPE
DFN1006B-3
OT883B)
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PDF
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SCS0240DF
Abstract: DFN1006-2
Text: SCS0240DF 0.2 A, 40 V Silicon Epitaxial Planar Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DFN1006-2 FEATURES ● Low turn-on voltage ● Fast switching ● PN junction guard for transient and ESD protection
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SCS0240DF
DFN1006-2
05REF
65TYP
08-Dec-2010
SCS0240DF
DFN1006-2
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PDF
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ds3-0505
Abstract: BAS16LP BAS16LP-7 DFN1006-2 A6 marking marking a6
Text: SPICE MODEL: BAS16LP BAS16LP NEW PRODUCT Lead-free Green SURFACE MOUNT SWITCHING DIODE Features • · · · · · Fast Switching Speed Ultra-Small Leadless Surface Mount Package For General Purpose Switching Applications DFN1006-2 Lead Free By Design/RoHS Compliant Note 1
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Original
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BAS16LP
DFN1006-2
AEC-Q101
DS30505
ds3-0505
BAS16LP
BAS16LP-7
DFN1006-2
A6 marking
marking a6
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PDF
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Untitled
Abstract: No abstract text available
Text: 83B PDTA115TMB SO T8 PNP resistor-equipped transistor; R1 = 100 k , R2 = open Rev. 1 — 2 July 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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PDTA115TMB
DFN1006B-3
OT883B)
PDTC115TMB.
AEC-Q101
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PDF
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DFN1006-2
Abstract: SDM10U45LP SDM10U45LP-7
Text: SPICE MODEL: SDM10U45LP SDM10U45LP Lead-free Green NEW PRODUCT SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • · Low Forward Voltage Drop · · · · Low Capacitance Guard Ring Die Construction for Transient Protection DFN1006-2 Lead Free By Design/RoHS Compliant Note 1
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Original
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SDM10U45LP
DFN1006-2
J-STD-020C
MIL-STD-202,
DS30588
DFN1006-2
SDM10U45LP
SDM10U45LP-7
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PDTA123YMB
Abstract: PDTC123YMB
Text: 83B PDTC123YMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 k , R2 = 10 k Rev. 1 — 11 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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PDTC123YMB
DFN1006B-3
OT883B)
PDTA123YMB.
AEC-Q101
PDTA123YMB
PDTC123YMB
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PDF
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PDTC123JMB
Abstract: No abstract text available
Text: 83B PDTA123JMB SO T8 PNP resistor-equipped transistor; R1 = 2.2 k , R2 = 47 k Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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PDTA123JMB
DFN1006B-3
OT883B)
PDTC123JMB.
AEC-Q101
PDTC123JMB
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PDF
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PDTA123YMB
Abstract: PDTC123YMB
Text: 83B PDTA123YMB SO T8 PNP resistor-equipped transistor; R1 = 2.2 k , R2 = 10 k Rev. 1 — 26 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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PDTA123YMB
DFN1006B-3
OT883B)
PDTC123YMB
AEC-Q101
PDTA123YMB
PDTC123YMB
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PDF
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PDTA143Z
Abstract: PDTA143ZMB PDTC143ZMB PDTA143
Text: 83B PDTA143ZMB SO T8 PNP resistor-equipped transistor; R1 = 4.7 k , R2 = 47 k Rev. 1 — 29 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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Original
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PDTA143ZMB
DFN1006B-3
OT883B)
PDTC143ZMB.
AEC-Q101
PDTA143Z
PDTA143ZMB
PDTC143ZMB
PDTA143
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Untitled
Abstract: No abstract text available
Text: 83B PDTA143TMB SO T8 PNP resistor-equipped transistor; R1 = 4.7 k , R2 = open Rev. 2 — 4 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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PDTA143TMB
DFN1006B-3
OT883B)
PDTC143TMB.
AEC-Q101
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PDF
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PDTC144WMB
Abstract: No abstract text available
Text: 83B PDTA144WMB SO T8 PNP resistor-equipped transistor; R1 = 47 k , R2 = 22 k Rev. 1 — 2 July 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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PDTA144WMB
DFN1006B-3
OT883B)
PDTC144WMB.
AEC-Q101
PDTC144WMB
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PDF
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Untitled
Abstract: No abstract text available
Text: D5V0L1B2LP4 ADVANCE INFORMATION LOW CAPACITANCE BIDIRECTIONAL TVS DIODE Features Mechanical Data • Provides ESD Protection per IEC 61000-4-2 Standard: • Air – ±30kV, Contact – ±30kV • • Case: X2-DFN1006-2 Case Material: Molded Plastic, “Green” Molding Compound. UL
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X2-DFN1006-2
IEC61000-4-4
5/50ns)
IEC61000-4-5
J-STD-020
MILSTD-202,
DS35586
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PDF
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Untitled
Abstract: No abstract text available
Text: 83B PDTC123EMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 1 — 3 April 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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PDTC123EMB
DFN1006B-3
OT883B)
PDTA123EMB.
AEC-Q101
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PDF
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NXP SMD ic MARKING CODE
Abstract: smd code marking ft sot23 marking 41 sot23 nxp
Text: 83B 2PA1774xMB series SO T8 40 V, 100 mA PNP general-purpose transistors Rev. 1 — 23 March 2012 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.
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2PA1774xMB
DFN1006B-3
OT883B)
2PA1774QMB
2PA1774RMB
2PA1774SMB
OT883B
2PC4617QMB
NXP SMD ic MARKING CODE
smd code marking ft sot23
marking 41 sot23 nxp
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TRANSISTOR SMD MARKING CODE 57
Abstract: PDTC114YMB PDTA114YMB
Text: 83B PDTC114YMB SO T8 NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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PDTC114YMB
DFN1006B-3
OT883B)
PDTA114YMB.
AEC-Q101
TRANSISTOR SMD MARKING CODE 57
PDTC114YMB
PDTA114YMB
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PDF
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SMD TRANSISTOR MARKING 2X
Abstract: PDTA143
Text: 83B PDTC143TMB SO T8 NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open Rev. 2 — 4 May 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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Original
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PDTC143TMB
DFN1006B-3
OT883B)
PDTA143TMB.
AEC-Q101
SMD TRANSISTOR MARKING 2X
PDTA143
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PDF
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transistor smd code marking 102
Abstract: TRANSISTOR SMD 2X K
Text: 83B PDTC124TMB SO T8 NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = open Rev. 1 — 29 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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Original
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PDTC124TMB
DFN1006B-3
OT883B)
PDTA124TMB.
AEC-Q101
transistor smd code marking 102
TRANSISTOR SMD 2X K
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PDF
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Untitled
Abstract: No abstract text available
Text: 83B 2N7002BKMB SO T8 60 V, single N-channel Trench MOSFET Rev. 1 — 11 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
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2N7002BKMB
DFN1006B-3
OT883B)
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PDF
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PDTA144
Abstract: nxp MARKING CC PDTC144V
Text: 83B PDTA144VMB SO T8 PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ Rev. 1 — 26 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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Original
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PDTA144VMB
DFN1006B-3
OT883B)
PDTC144VMB.
AEC-Q101
PDTA144
nxp MARKING CC
PDTC144V
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PDF
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Untitled
Abstract: No abstract text available
Text: 83B PMBT3906MB SO T8 40 V, 200 mA PNP switching transistor Rev. 1 — 2 April 2012 Product data sheet 1. Product profile 1.1 General description PNP single switching transistor in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.
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Original
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PMBT3906MB
DFN1006B-3
OT883B)
PMBT3904MB.
AEC-Q101
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PDF
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transistor smd code marking 101
Abstract: No abstract text available
Text: 83B PDTC115EMB SO T8 NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ Rev. 1 — 1 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
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Original
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PDTC115EMB
DFN1006B-3
OT883B)
PDTA115EMB.
AEC-Q101
transistor smd code marking 101
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PDF
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