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    PDTA123JMB Price and Stock

    Rochester Electronics LLC PDTA123JMB,315

    TRANS PREBIAS PNP 50V 0.1A 3DFN
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    DigiKey PDTA123JMB,315 Bulk 11,225
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    PDTA123JMB,315 Bulk 11,225
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    Nexperia PDTA123JMB,315

    TRANS PREBIAS PNP 50V 0.1A 3DFN
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    DigiKey PDTA123JMB,315 Reel 10,000
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    Avnet Americas PDTA123JMB,315 Reel 4 Weeks 13,514
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    PDTA123JMB,315 Reel 6 Weeks 30,000
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    Mouser Electronics PDTA123JMB,315
    • 1 $0.27
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    Rochester Electronics PDTA123JMB,315 80,000 1
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    TTI PDTA123JMB,315 Reel 30,000
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    NXP Semiconductors PDTA123JMB,315

    PDTA123JMB - Small Signal Bipolar Transistor, 0.1A, 50V, PNP, XQFN3
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    Rochester Electronics PDTA123JMB,315 190,000 1
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    PDTA123JMB Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PDTA123JMB NXP Semiconductors PNP resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 47 kOhm Original PDF
    PDTA123JMB,315 NXP Semiconductors PDTA123JMB - PDTA123JMB - PNP resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 47 kOhm Original PDF

    PDTA123JMB Datasheets Context Search

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    PDTC123JMB

    Abstract: No abstract text available
    Text: 83B PDTA123JMB SO T8 PNP resistor-equipped transistor; R1 = 2.2 k , R2 = 47 k Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTA123JMB DFN1006B-3 OT883B) PDTC123JMB. AEC-Q101 PDTC123JMB

    PDTC123JMB

    Abstract: No abstract text available
    Text: 83B PDTA123JMB SO T8 PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTA123JMB DFN1006B-3 OT883B) PDTC123JMB. AEC-Q101 PDTC123JMB

    circuit diagram wireless spy camera

    Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
    Text: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint


    Original     		PDF DFN1006D-2 OD882D) DFN1010D-3 OT1215) DFN2020MD-6 OT1220) DFN1608D-2 OD1608) DSN0603 OD962) circuit diagram wireless spy camera PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143

    smd transistor footprint

    Abstract: PDTC123JMB
    Text: 83B PDTC123JMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTC123JMB DFN1006B-3 OT883B) PDTA123JMB. AEC-Q101 smd transistor footprint PDTC123JMB

    PDTC123JMB

    Abstract: No abstract text available
    Text: 83B PDTC123JMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 k , R2 = 47 k Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTC123JMB DFN1006B-3 OT883B) PDTA123JMB. AEC-Q101 PDTC123JMB