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    D1006 Search Results

    D1006 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    2SD1006-T2-AZ Renesas Electronics Corporation Small Signal Bipolar Transistors, POMM, / Visit Renesas Electronics Corporation
    2SD1006-AZ Renesas Electronics Corporation Small Signal Bipolar Transistors, POMM, / Visit Renesas Electronics Corporation
    2SD1006-T1-AZ Renesas Electronics Corporation Small Signal Bipolar Transistors, POMM, / Visit Renesas Electronics Corporation
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    D1006 Price and Stock

    Wolfspeed C6D10065Q-TR

    DIODE SIL CARBIDE 650V 39A 4QFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C6D10065Q-TR Cut Tape 3,279 1
    • 1 $4.68
    • 10 $3.933
    • 100 $3.1815
    • 1000 $2.42148
    • 10000 $2.42148
    		Buy Now
    Mouser Electronics C6D10065Q-TR 4,104
    • 1 $4.67
    • 10 $3.93
    • 100 $3.18
    • 1000 $2.42
    • 10000 $2.27
    		Buy Now

    SMC Diode Solutions S3D10065E

    DIODE SIL CARBIDE 650V 10A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey S3D10065E Reel 2,500 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.54224
    		Buy Now

    Analog Power ADC6D10065A

    DIODE SIL SIC 650V 37A TO220-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ADC6D10065A Tube 2,497 1
    • 1 $6.01
    • 10 $5.151
    • 100 $4.2925
    • 1000 $3.40875
    • 10000 $3.19413
    		Buy Now

    Wolfspeed C3D10060A

    DIODE SIL CARB 600V 30A TO220-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C3D10060A Tube 2,428 1
    • 1 $6.08
    • 10 $6.08
    • 100 $4.344
    • 1000 $3.44966
    • 10000 $3.23246
    		Buy Now
    Mouser Electronics C3D10060A 2,758
    • 1 $6.02
    • 10 $4.79
    • 100 $4.11
    • 1000 $3.16
    • 10000 $3.15
    		Buy Now

    Wolfspeed C3D10065E-TR

    DIODE SIL CARB 650V 32A TO252-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C3D10065E-TR Cut Tape 2,250 1
    • 1 $6.51
    • 10 $5.584
    • 100 $4.6531
    • 1000 $3.69508
    • 10000 $3.69508
    		Buy Now
    Find more D1006 price and stock on Findchips.com

    D1006 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    D100-6/6 Power-One Input Current = 10-20 Output Voltage = 6 Output Current = 8.3A Scan PDF
    D100-6A Power-One Input Current = 18-36 Output Voltage = 6 Output Current = 16.6A Scan PDF
    D100-6B Power-One Input Current = 20-60 Output Voltage = 6 Output Current = 16.6A Scan PDF
    D1006UK Semelab Metal Gate RF Silicon FET Original PDF
    D1006UK Semelab METAL GATE RF SILICON FET Original PDF
    D1006UK Unknown Shortform Datasheet & Cross References Data Short Form PDF

    D1006 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    B0701

    Abstract: K4002 I0002 D1006
    Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 5. Exploded View SYSTEM ASSY LCD I0006 T0001 W3015 B0013 M0001 M3000 I0001 W3006 D0005 I0009 D1006


    Original     		PDF I0006 T0001 W3015 B0013 M0001 M3000 I0001 D0005 D1006 W3006 B0701 K4002 I0002

    1455

    Abstract: D1006UK 20swg
    Text: TetraFET D1006UK METAL GATE RF SILICON FET MECHANICAL DATA B C A 1 E 2 3 F 6 5 G 4 J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W – 28V – 175MHz SINGLE ENDED D H M FEATURES • SIMPLIFIED AMPLIFIER DESIGN Q K N O P • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		PDF D1006UK 175MHz 20swg 19swg 1455 D1006UK

    D1006UK

    Abstract: d1006 20swg FT-82 VG10
    Text: TetraFET D1006UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C A 1 E 2 3 G F 6 5 4 J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W – 28V – 175MHz SINGLE ENDED D H K FEATURES • SIMPLIFIED AMPLIFIER DESIGN Q M N O P • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		PDF D1006UK 175MHz D1006K 40-200pF 16-100pF 100nF 20swg D1006UK d1006 FT-82 VG10

    samsung r522

    Abstract: r522 D1006
    Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 5. Exploded View ASSY LCD SYSTEM I0006 T0001 W3015 B0013 M0001 M3000 I0001 W3006 D0005 I0009 D1006


    Original     		PDF I0006 T0001 W3015 B0013 M0001 M3000 I0001 D0005 D1006 W3006 samsung r522 r522

    20swg

    Abstract: VG10
    Text: TetraFET D1006UK METAL GATE RF SILICON FET MECHANICAL DATA B C A 1 E 2 3 G F 6 5 4 J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W – 28V – 175MHz SINGLE ENDED D H K FEATURES • SIMPLIFIED AMPLIFIER DESIGN Q M N O P • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		PDF D1006UK 175MHz 100nF D1006K 40-200pF 16-100pF 40-200pF 20swg VG10

    Untitled

    Abstract: No abstract text available
    Text: TetraFET D1006UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C A 1 E 2 3 G F 6 5 4 J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W – 28V – 175MHz SINGLE ENDED D H K FEATURES • SIMPLIFIED AMPLIFIER DESIGN Q M N O P • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		PDF D1006UK 175MHz 760ail: D1006K 40-200pF 16-100pF 100nF

    D1006UK

    Abstract: No abstract text available
    Text: TetraFET D1006UK METAL GATE RF SILICON FET MECHANICAL DATA B C A 1 E 2 3 F 6 5 G 4 J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W – 28V – 175MHz SINGLE ENDED D H M FEATURES • SIMPLIFIED AMPLIFIER DESIGN Q K N O P • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		PDF D1006UK 175MHz 381MHz D1006UK

    1455

    Abstract: 20swg D1006UK
    Text: TetraFET D1006UK METAL GATE RF SILICON FET MECHANICAL DATA B C A 1 E 2 3 G F 6 5 4 J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W – 28V – 175MHz SINGLE ENDED D H K FEATURES • SIMPLIFIED AMPLIFIER DESIGN Q M N O P • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		PDF D1006UK 175MHz 20swg 19swg 1455 D1006UK

    hart protocol

    Abstract: No abstract text available
    Text: Quad-Channel, 12-Bit, Serial Input, 4 mA to 20 mA Output DAC with Dynamic Power Control and HART Connectivity AD5737 Data Sheet FEATURES Each channel has a corresponding CHART pin so that HART signals can be coupled onto the current output of the AD5737. 12-bit resolution and monotonicity


    Original     		PDF 12-Bit, 12-bit AD5737 AD5737. AD5737 04-10-2012-C MO-220-VMMD-4 64-Lead CP-64-3) AD5737ACPZ hart protocol

    XAL4040-103

    Abstract: AD5737 AD5755-1 ADP2302 ADP2303 ADR02 ADR445 100670-2
    Text: Quad-Channel, 12-Bit, Serial Input, 4 mA to 20 mA Output DAC with Dynamic Power Control and HART Connectivity AD5737 7.4 V to 29.5 V using a dc-to-dc boost converter optimized for minimum on-chip power dissipation. FEATURES 12-bit resolution and monotonicity


    Original     		PDF 12-Bit, AD5737 12-bit AD5737. AD5737 MO-220-VMMD-4 080108-C 64-Lead CP-64-3) AD5737ACPZ XAL4040-103 AD5755-1 ADP2302 ADP2303 ADR02 ADR445 100670-2

    315mhz module receiver

    Abstract: ASK transmitter 433mhz D1006A 433MHz IC RF Transmitter 315MHz rf traNsmitter receiver 315mhz HT66F03 433mhz transmitter 433MHZ PCB antenna antenna 433MHZ PCB
    Text: HT66F03T3/68F03T3 MCU with 315MHz/433MHz ASK Transmitter HT66F03T3/68F03T3 MCU with 315MHz/433MHz ASK Transmitter D/N：HA0220E General Description The HT66F03T3/68F03T3 is a Flash type MCU with an RF ASK transmitter function. Data generated from the MCU will be transmitted at a carrier frequency of 315M/433MHz to a


    Original     		PDF HT66F03T3/68F03T3 315MHz/433MHz D/NHA0220E 315M/433MHz 300MHz 450MHz 10dBm 315mhz module receiver ASK transmitter 433mhz D1006A 433MHz IC RF Transmitter 315MHz rf traNsmitter receiver 315mhz HT66F03 433mhz transmitter 433MHZ PCB antenna antenna 433MHZ PCB

    submersible motor winding formula

    Abstract: 3G3MV A2007 Manual 3G3MV-A4040 3G3MV manual inverter omron sysdrive 3G3MV-A2004
    Text: Cat. No. I527-E2-02 USER’S MANUAL SYSDRIVE 3G3MV Multi-function Compact Inverter Thank you for choosing this SYSDRIVE 3G3MV-series product. Proper use and handling of the product will ensure proper product performance, will lengthen product life, and may prevent possible accidents.


    Original     		PDF I527-E2-02 559-77-9633/Fax: submersible motor winding formula 3G3MV A2007 Manual 3G3MV-A4040 3G3MV manual inverter omron sysdrive 3G3MV-A2004

    tps51620

    Abstract: alc889 bq24721 tps51125 ITE8512E C5134 TI_BQ24721C_QFN_32P INVENTEC JMB385 fds8884
    Text: www.kythuatvitinh.com KiliManjaro CS Build A02 2008.02.04 Digitally signed by dd DN: cn=dd, o=dd, ou=dd, email=dddd@yahoo. com, c=US Date: 2009.11.29 17:18:29 +07'00' EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX


    Original     		PDF 23-Oct-2007 tps51620 alc889 bq24721 tps51125 ITE8512E C5134 TI_BQ24721C_QFN_32P INVENTEC JMB385 fds8884

    tps51125

    Abstract: alc889 c2233 fds8884 bq24721 BQ24721C Inventec IT8512E tps51125 kbc AR8121
    Text: TETON2 DDRIII-Pre MV BUILD 2008.06.18 EE DATE DATE POWER DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX XXXXXXXXXXXX P/N INVENTEC TITLE VER : TETON2 SIZE CODE A3 CS SHEET DOC. NUMBER REV 1310A22077-0-MTRA02 1 OF 53


    Original     		PDF 1310A22077-0-MTRA02 R5000 R5002 D5002 S3048 PAD506 S3049 D4001 R4001 R4000 tps51125 alc889 c2233 fds8884 bq24721 BQ24721C Inventec IT8512E tps51125 kbc AR8121

    Untitled

    Abstract: No abstract text available
    Text: D10060–Silicon Carbide Schottky Diode VRRM = 600V Zero Recovery Rectifier IF = 10A Qc = 28nC Features • • • • • • • Package 600 Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Switching Behavior


    Original     		PDF CSD10060â O-263-2 O-220-2 CSD10060

    d100

    Abstract: No abstract text available
    Text: Voltage Sensitive Relays WILMAR Protective Relays – D100X Series, Close Differential Function: • ANSI/IEEE C37.90-1978 • UL file No. E58048 • CSA file No. LR61158 0.5 Close Differential Relays are voltage sensitive. The pick-up and drop-out voltage settings are independently adjustable, which allows precise setting of the


    Original     		PDF D100X E58048 LR61158 D100-3X D100-4X D100-8X D100-5X D100-7X d100

    C3D10065I

    Abstract: No abstract text available
    Text: D10065I Silicon Carbide Schottky Diode Z-Rec Rectifier IF; 10 A TC<125˚C= = 25 nC Package 650-Volt Schottky Rectifier Ceramic Package provides 2.5kV isolation Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior


    Original     		PDF C3D10065I 650-Volt O-220-2 C3D10065I

    Futaba display

    Abstract: HT7L4091 HT1632C HT16K33 ht8972 HT12D ht82v46 HT46F47 Futaba VFD ht12e dip 18
    Text: Selection Guide Holtek Company Introduction Introduction Continual growth and a persistent stream of new product releases onto the global market has been the hallmark of Holtek Semiconductor since the establishment of the company in 1983 to the present date. Although remaining focused in the area of


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: bOE D SENELAB • 0133107 ODDGTED 27b ■ SMLB 'T-'S V 'ZS PLC SEMELAB D1006UK NEW PRODUCT RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOSRFFET 120W -28V-175M H z SINGLE ENDED MECHANICAL DATA D im ensions FEATURES • SIMPLIFIED AMPLIFIER DESIGN


    OCR Scan     		PDF D1006UK -28V-175M

    Untitled

    Abstract: No abstract text available
    Text: nil TetraFET Vrrr = mi D1006UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1 2 0 W -2 8 V -1 7 5 M H z SINGLE ENDED FEATURES u • SIMPLIFIED AMPLIFIER DESIGN Q N K w O P • SUITABLE FOR BROAD BAND APPLICATIONS


    OCR Scan     		PDF D1006UK

    Untitled

    Abstract: No abstract text available
    Text: Illl TetraFET eFTI SEME INI D1006UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W -28V-175M Hz SINGLE ENDED 4 1 i< 2 3 ^ -| F G * r FEATURES • SIMPLIFIED AMPLIFIER DESIGN á"" A Q N P DV PIN 1 SOURCE


    OCR Scan     		PDF D1006UK -28V-175M

    Untitled

    Abstract: No abstract text available
    Text: GENERAL OPERATING CHARACTERISTICS PRESSURE RANGE OVERPRESSURE TEMPERATURE RANGES SUPPLY VOLTAGE SUPPLY CURRENT SHORT CIRCUIT LIMIT OUTPUT RIPPLE GROUND REFERENCE 12.6 -5 TO + 5 IN. H? 0 5 PSI STORAGE -55 TO +125°C OPERATE - 40 TO +85°C COMPENSATED +5 TO +45°C


    OCR Scan     		PDF 163PC01D36

    BFM12

    Abstract: BFM33 BFM34 BFM21 BFM-12 BFM32 D1022UK D1053UK D1015UK
    Text: R.F. Division Semelab Device Type Working Power Working b v dss *D Freq. W atts Voltage Volts Am ps Min. Gain 13db BFM12 4 28 70 5 200MHz BFM21 0.75 0.75 4 28 12 65 0,2 0.2 2.5GHz 2.5GHz 1 2GHz 11db 13db 1.6 2 1GHz 13db 1GHz 13db 1GHz 13db 0.8GHz 13db 16db


    OCR Scan     		PDF BFM12 BFM21 BFM22 BFM23 BFM32 BFM33 BFM34 BFM35 D1001UK D1002UK BFM33 BFM34 BFM-12 BFM32 D1022UK D1053UK D1015UK

    opti 82c392

    Abstract: teac fd 235hf opti 486 chipset
    Text: OPTÌ-486SXWB PC/AT Chipset 82C493/82C392/82C206 Preliminary 82C493/82C392 DATA BOOK Version 1.1 August 16, 1991 / OPTi, Inc., 2525 Walsh A venue, Santa Clara, CA 95051 (408) 9 8 0 -8 1 7 8 FAX: 4 0 8 -9 8 0 -8 8 6 0 Disclaimer This specification is subject to change without notice. OPTi, Incorporated assumes


    OCR Scan     		PDF -486SXWB 82C493/82C392/82C206) 82C493/82C392 82C206 80486/P23N opti 82c392 teac fd 235hf opti 486 chipset